公开(公告)号：EP1094129A2

公开(公告)日：2001-04-25

申请号：EP00309258.2

申请日：2000-10-20

申请人： Applied Materials, Inc.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Waldhauer, Ann P.

IPC分类号： C23C16/44

CPC分类号： C23C16/4405

摘要： A method of removing contaminants from a surface in a silicon substrate processing chamber. The method includes coating the surface which has been exposed to contaminants including metal particles with a material preferably including silicon. During coating, contaminants are collected by the material being applied. The method further includes removing the material and any contaminants that have been collected by the material during coating. The method can be performed after the surface has been exposed to contaminants from ambient air or moisture during cleaning or preventive maintenance procedures, for example. Also, the method is preferably performed before any baking procedures or before the chamber is heated to drive out any moisture that has been introduced to the chamber.

摘要翻译： 一种从硅衬底处理室中的表面除去污染物的方法。 该方法包括用优选包括硅的材料涂覆暴露于包括金属颗粒的污染物的表面。 在涂层期间，污染物被所施加的材料收集。 该方法还包括在涂布期间去除材料和由材料收集的任何污染物。 例如，在清洁或预防性维护过程中，表面已暴露于来自环境空气或湿气的污染物之后，可以进行该方法。 此外，该方法优选在任何烘烤过程之前或在室被加热之前进行以排出已经被引入到室中的任何水分。

公开(公告)号：EP1085562A3

公开(公告)日：2004-06-09

申请号：EP00308116.3

申请日：2000-09-18

申请人： Applied Materials, Inc.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Scudder, Lance A. ,  Riley, Norma B.

IPC分类号： H01L21/205 ,  C23C16/02 ,  H01L21/762

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000° - 1300°C. While the substrate is heated to a temperature between 1000° - 1300°C, the silicon surface is exposed to a gas mix comprising H 2 and HCl in the chamber to smooth the silicon surface.

公开(公告)号：EP1603154A3

公开(公告)日：2010-09-29

申请号：EP05019274.9

申请日：2000-09-18

申请人： APPLIED MATERIALS, INC.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Scudder, Lance A. ,  Riley, Norma B.

IPC分类号： H01L21/205 ,  C23C16/02 ,  H01L21/762 ,  H01J37/32 ,  C23C16/455

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method for treating a surface of a substrate, said method comprising:
providing a chamber with central and outside gas inlet zones, wherein the gas flow rate in each gas inlet zone is independently controllable;
providing a substrate within said chamber, said substrate comprising a cleaved surface, said cleaved surface being characterized by a predetermined surface roughness value and having a distribution of hydrogen bearing particles defined from said cleaved surface to a region underlying said cleaved surface;
increasing a temperature of said cleaved surface to greater than about 1000°C while introducing a hydrogen bearing etchant gas into said chamber through said gas inlet zones; and
exposing said cleaved surface to said hydrogen bearing etchant gas, thereby reducing said predetermined surface roughness value by about fifty percent and greater.

公开(公告)号：EP1603154A2

公开(公告)日：2005-12-07

申请号：EP05019274.9

申请日：2000-09-18

申请人： APPLIED MATERIALS, INC.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Scudder, Lance A. ,  Riley, Norma B.

IPC分类号： H01L21/205 ,  C23C16/02 ,  H01L21/762

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method for treating a surface of a substrate, said method comprising:

providing a chamber with central and outside gas inlet zones, wherein the gas flow rate in each gas inlet zone is independently controllable;
providing a substrate within said chamber, said substrate comprising a cleaved surface, said cleaved surface being characterized by a predetermined surface roughness value and having a distribution of hydrogen bearing particles defined from said cleaved surface to a region underlying said cleaved surface;
increasing a temperature of said cleaved surface to greater than about 1000°C while introducing a hydrogen bearing etchant gas into said chamber through said gas inlet zones; and
exposing said cleaved surface to said hydrogen bearing etchant gas, thereby reducing said predetermined surface roughness value by about fifty percent and greater.

摘要翻译： 一种处理衬底表面的方法，所述方法包括：向腔室提供中心和外部气体入口区域，其中每个气体入口区域中的气体流量是独立可控的; 在所述室内提供衬底，所述衬底包括切割表面，所述切割表面的特征在于预定的表面粗糙度值，并且具有从所述切割表面限定到所述切割表面下方区域的含氢颗粒的分布; 将所述裂解表面的温度增加到大于约1000℃，同时通过所述气体入口区将氢气蚀刻剂气体引入所述腔室; 并将所述切割的表面暴露于所述含氢蚀刻剂气体，从而将所述预定表面粗糙度值降低大约百分之五十以上。

公开(公告)号：EP1094129A3

公开(公告)日：2001-05-30

申请号：EP00309258.2

申请日：2000-10-20

申请人： Applied Materials, Inc.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Waldhauer, Ann P.

IPC分类号： C23C16/44

CPC分类号： C23C16/4405

摘要： A method of removing contaminants from a surface in a silicon substrate processing chamber. The method includes coating the surface which has been exposed to contaminants including metal particles with a material preferably including silicon. During coating, contaminants are collected by the material being applied. The method further includes removing the material and any contaminants that have been collected by the material during coating. The method can be performed after the surface has been exposed to contaminants from ambient air or moisture during cleaning or preventive maintenance procedures, for example. Also, the method is preferably performed before any baking procedures or before the chamber is heated to drive out any moisture that has been introduced to the chamber.

公开(公告)号：EP1085562A2

公开(公告)日：2001-03-21

申请号：EP00308116.3

申请日：2000-09-18

申请人： Applied Materials, Inc.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Scudder, Lance A. ,  Riley, Norma B.

IPC分类号： H01L21/3105

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000° - 1300°C. While the substrate is heated to a temperature between 1000° - 1300°C, the silicon surface is exposed to a gas mix comprising H 2 and HCl in the chamber to smooth the silicon surface.

摘要翻译： 一种平滑形成在基底上的硅表面的方法。 根据本发明，将具有硅表面的基板放置在室内并加热到1000-1300℃的温度。将基板加热到1000-1300℃之间的温度下，硅表面是 在室内暴露于包含H 2和HCl的气体混合物以使硅表面平滑。