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1.
公开(公告)号:EP3167476A4
公开(公告)日:2018-03-07
申请号:EP15819695
申请日:2015-07-03
IPC分类号: H01L21/027 , G02B5/08
CPC分类号: G02B5/0891 , C23C14/06 , C23C14/14 , C23C16/24 , C23C16/45525 , G02B5/0833 , G02B5/0875 , G03F7/7015 , G03F7/70316 , G03F7/70958 , G21K1/062 , G21K2201/067 , H05G2/008
摘要: An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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2.
公开(公告)号:EP3167473A4
公开(公告)日:2017-11-29
申请号:EP15819417
申请日:2015-07-08
IPC分类号: C23C28/00 , C23C14/56 , G03F1/24 , G03F1/54 , H01L21/027
CPC分类号: G03F1/22 , C23C14/042 , C23C16/042 , C23C28/00 , C23C28/322 , C23C28/34 , C23C28/42 , C23C28/44 , G03F1/24 , G03F1/54 , G03F7/70033
摘要: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
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3.
公开(公告)号:EP3167475A4
公开(公告)日:2018-04-18
申请号:EP15819621
申请日:2015-07-08
IPC分类号: H01L21/027 , C23C16/44 , G03F1/24 , G03F1/38
摘要: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
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4.
公开(公告)号:EP3167474A4
公开(公告)日:2018-04-18
申请号:EP15819522
申请日:2015-07-03
IPC分类号: H01L21/027 , C23C14/06 , C23C14/14 , G02B1/14 , G02B5/08 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/20 , G21K1/06
CPC分类号: G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
摘要: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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