公开(公告)号：EP2911185B1

公开(公告)日：2017-12-13

申请号：EP15154874.0

申请日：2015-02-12

申请人： Aichi Steel Corporation

发明人： Yamamoto, Michiharu ,  Tatematsu, Shunichi ,  Yamashita, Ryusuke ,  Hamada, Norihiko ,  Gemba, Koei

IPC分类号： H01L21/311 ,  G01R33/06 ,  B81C1/00

CPC分类号： C23C16/045 ,  B81C1/00 ,  C23C16/401 ,  C23C16/44 ,  G01R33/00 ,  H01F41/04 ,  H01L21/31138

摘要： A method for etching an organic film 1 having a surface selectively protected by a hard mask layer 2, includes a partial etching process of etching the organic film 1 partly in a thickness direction of the organic film 1 by using a mixed gas containing a gas that anisotropically etches a silicon oxide film and a gas that isotropically etches the organic film without etching the silicon oxide film; and a deposition process of depositing a protective film 3 made of the silicon oxide film on side surfaces 12 and a bottom surface 11 of a recess 10 formed in the organic film in the partial etching process. The partial etching process and the deposition process is alternately performed multiple times.

公开(公告)号：EP2911185A1

公开(公告)日：2015-08-26

申请号：EP15154874.0

申请日：2015-02-12

申请人： Aichi Steel Corporation

发明人： Yamamoto, Michiharu ,  Tatematsu, Shunichi ,  Yamashita, Ryusuke ,  Hamada, Norihiko ,  Gemba, Koei

IPC分类号： H01L21/311 ,  G01R33/06 ,  B81C1/00

CPC分类号： C23C16/045 ,  B81C1/00 ,  C23C16/401 ,  C23C16/44 ,  G01R33/00 ,  H01F41/04 ,  H01L21/31138

摘要： A method for etching an organic film 1 having a surface selectively protected by a hard mask layer 2, includes a partial etching process of etching the organic film 1 partly in a thickness direction of the organic film 1 by using a mixed gas containing a gas that anisotropically etches a silicon oxide film and a gas that isotropically etches the organic film without etching the silicon oxide film; and a deposition process of depositing a protective film 3 made of the silicon oxide film on side surfaces 12 and a bottom surface 11 of a recess 10 formed in the organic film in the partial etching process. The partial etching process and the deposition process is alternately performed multiple times.

摘要翻译： 蚀刻具有由硬掩模层2选择性地保护的表面的有机膜1的方法包括通过使用含有气体的混合气体部分地在有机膜1的厚度方向上蚀刻有机膜1的部分蚀刻工艺 各向异性地蚀刻氧化硅膜和在不蚀刻氧化硅膜的同时蚀刻有机膜的气体; 以及在部分蚀刻工艺中将由氧化硅膜制成的保护膜3沉积在形成在有机膜中的凹部10的侧表面12和底表面11上的沉积工艺。 部分蚀刻工艺和沉积工艺交替执行多次。