摘要:
The present invention relates to an integrated circuit package (10) comprising a lead frame (1) comprising a plurality of leads and a current conductor forming an electrically conductive path that connects at least two leads (13,14) of the plurality of leads. The package also comprises a semiconductor die (2) comprising an integrated circuit and having first and second opposing surfaces, the first surface being proximate to the current conductor. Each of the at least two leads comprises a groove (4) to locally space the lead away from the semiconductor die in a direction perpendicular to the first surface, in which the groove (4) comprises at least that part of the lead that overlaps the edge of the semiconductor die.
摘要:
The subject of this patent is a novel method for developing a sensing system that can determine a magnetic attraction force between a magnetic structure and its target level by using an Opposing Residual Magnetic Field (ORMF) to quantify said magnetic attraction force. Steps for the development and implementation of an ORMF Sensing System are set forth herein.
摘要:
Methods and apparatus to provide an integrated circuit having a magnetic sensing element having differential first and second outputs and an input, the input to receive current and first and second switches coupled to a respective one of the differential first and second outputs. A first voltage source is coupled between the first and second switches, the first and second switches having a first state in which the first voltage source is coupled across the differential first and second outputs, and an IC output can output a voltage corresponding to the first voltage source when the first and second switches are in the first state for monitoring operation of a signal path from the magnetic sensing element to the IC output.
摘要:
Methods and apparatus to provide an integrated circuit having a magnetic sensing element having differential first and second outputs and an input, the input to receive current and first and second switches coupled to a respective one of the differential first and second outputs. A first voltage source is coupled between the first and second switches, the first and second switches having a first state in which the first voltage source is coupled across the differential first and second outputs, and an IC output can output a voltage corresponding to the first voltage source when the first and second switches are in the first state for monitoring operation of a signal path from the magnetic sensing element to the IC output.
摘要:
One example includes a method for fabricating a compound material. The method includes providing a first discrete material layer having a first thickness dimension. The first discrete material layer includes a first material having a first magnetic susceptibility. The method also includes depositing a second discrete material layer having a second thickness dimension over the first discrete material layer. The second discrete material layer can include a second material having a second magnetic susceptibility. The relative first and second thickness dimensions can be selected to provide a desired magnetic susceptibility of the compound material.
摘要:
An analysis apparatus (10) analyzes the properties of an object to be analyzed. Specifically, the analysis apparatus (10) receives an input of property information on an object to be analyzed and calculates, in accordance with the property information on the input object to be analyzed, an average value of magnetization vectors allocated to each micro-region that is obtained by dividing the object to be analyzed into regions. Then, by using the calculated average value of the magnetization vectors and an equation of a magnetic field that is a governing equation of a vector potential, the analysis apparatus (10) calculates the vector potential obtained after a predetermined time has elapsed.
摘要:
A multi-layer device is provided for connecting to an electrical unit is enclosed. A first wafer has a first outer terminal and a second outer terminal with etch pits. A first insulator has a first surface bonded to the first wafer and a first inner terminal located on an opposing second surface. A second wafer has a first surface bonded to the second surface of the first insulating layer and includes a pillar electrically connected to the first wafer. A second insulator has a first surface bonded to a second surface of the second wafer and a second inner terminal located on the first surface of the second insulator. The first outer terminal is electrically connected to the first inner terminal, and the second outer terminal is electrically connected to the second inner terminal. The first and second outer terminals are adapted for connecting to an electrical unit.
摘要:
The invention relates to a method for determining materials conversion in electrochemical surface reactions in at least one local surface area between a surface counter-electrode device (20) and a surface electrode device (30) which has a contact element section (34s) matching the surface area and a contact element (34) in contact with the other surface areas. In order to improve said method so that materials conversion to be determined as easily as possible, the contact element and the contact element section are connected to a power source or to a current sink (90) which are provided for the operation of the electrochemical reaction. A current flowing through a conductor (44) arranged between the contact element section and the power source or current sink generates a magnetic field (70) around said conductor and the magnetic field is used to measure materials conversion in the local surface area.