公开(公告)号：EP2126161A1

公开(公告)日：2009-12-02

申请号：EP08709150.0

申请日：2008-02-21

申请人： AIXTRON AG

发明人： KÄPPELER, Johannes ,  SCHMITZ, Dietmar

IPC分类号： C30B25/10 ,  C30B29/40 ,  C30B29/48 ,  C23C16/46

CPC分类号： C30B25/10 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/463 ,  C30B29/40 ,  C30B29/403 ,  C30B29/48

摘要： The invention relates to a device for depositing one or more layers, in particular crystalline layers, on one or more substrates, in particular crystalline substrates (6), which are situated on a susceptor (3) in a process chamber (2) of a reactor (1). A process chamber wall (4) that can be actively heated by a process chamber heating unit (11) lies opposite the susceptor (3) that can be actively heated by the susceptor heating unit (11). The device is provided with a gas inlet organ (7) for introducing process gases into the process chamber and the process chamber heating unit (11) has a coolant channel (13) and is situated at a distance from the exterior (18) of the process chamber wall (4) during the active heating of the latter (4). The aim of the invention is to also allow the device to be used with hybrid technology. To achieve this, the process chamber wall (4) can be selectively actively heated and also actively cooled, the coolant channel (13) acting as a cooling unit (12) for the process chamber wall. The distance between the cooling unit (12) for the process chamber wall and said wall (4) can be altered from heating position that is at a distance to a cooling position by means of a displacement unit, which is in particular designed as a lifting unit.

公开(公告)号：EP2126161B1

公开(公告)日：2011-01-12

申请号：EP08709150.0

申请日：2008-02-21

申请人： AIXTRON AG

发明人： KÄPPELER, Johannes ,  SCHMITZ, Dietmar

IPC分类号： C30B25/10 ,  C30B29/40 ,  C30B29/48 ,  C23C16/46

CPC分类号： C30B25/10 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/463 ,  C30B29/40 ,  C30B29/403 ,  C30B29/48

摘要： The invention relates to a device for depositing one or more layers, in particular crystalline layers, on one or more substrates, in particular crystalline substrates (6), which are situated on a susceptor (3) in a process chamber (2) of a reactor (1). A process chamber wall (4) that can be actively heated by a process chamber heating unit (11) lies opposite the susceptor (3) that can be actively heated by the susceptor heating unit (11). The device is provided with a gas inlet organ (7) for introducing process gases into the process chamber and the process chamber heating unit (11) has a coolant channel (13) and is situated at a distance from the exterior (18) of the process chamber wall (4) during the active heating of the latter (4). The aim of the invention is to also allow the device to be used with hybrid technology. To achieve this, the process chamber wall (4) can be selectively actively heated and also actively cooled, the coolant channel (13) acting as a cooling unit (12) for the process chamber wall. The distance between the cooling unit (12) for the process chamber wall and said wall (4) can be altered from heating position that is at a distance to a cooling position by means of a displacement unit, which is in particular designed as a lifting unit.

公开(公告)号：EP1255876B1

公开(公告)日：2003-07-30

申请号：EP01903774.6

申请日：2001-02-15

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  KÄPPELER, Johannes ,  STRAUCH, Gert ,  SCHMITZ, Dietmar

IPC分类号： C23C16/448 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/45574 ,  C23C14/0015 ,  C23C14/12 ,  C23C14/22 ,  C23C14/228 ,  C23C16/006 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572

摘要： A method and device for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterised in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

公开(公告)号：EP1255876A2

公开(公告)日：2002-11-13

申请号：EP01903774.6

申请日：2001-02-15

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  KÄPPELER, Johannes ,  STRAUCH, Gert ,  SCHMITZ, Dietmar

IPC分类号： C23C16/448 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/45574 ,  C23C14/0015 ,  C23C14/12 ,  C23C14/22 ,  C23C14/228 ,  C23C16/006 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572

摘要： A method and device for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterised in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.