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1.发明公开A VERTICAL HALL EFFECT ELEMENT WITH IMPROVED SENSITIVITY 有权VERTIKALES HALL-SENSORELEMENT MIT VERBESSERTER EMPFINDLICHKEIT
公开(公告)号：EP2939039A1
公开(公告)日：2015-11-04
申请号：EP13780484.5
申请日：2013-10-10
发明人： WANG, Yigong
CPC分类号： H01L43/14 , G01R33/0052 , G01R33/077 , H01L43/065
摘要： A vertical Hall Effect element includes a low voltage P-well region disposed at a position between pickups of a vertical Hall Effect element to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity.
摘要翻译： 垂直霍尔效应元件包括设置在垂直霍尔效应元件的拾取器之间的位置处的低电压P阱区域，以产生垂直霍尔效应元件的改善的灵敏度。 一种方法导致具有改善的灵敏度的垂直霍尔效应元件。
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公开(公告)号：EP3965157A1
公开(公告)日：2022-03-09
申请号：EP21202902.9
申请日：2018-06-08
发明人： WANG, Yigong
IPC分类号： H01L27/11521 , H01L27/11558 , H01L27/11541 , H01L27/11543
摘要： Systems, methods, and techniques described here provide for a hybrid electrically erasable programmable read-only memory (EEPROM) that functions as both a single polysilicon EEPROM and a double polysilicon EEPROM. The two-in-one hybrid EEPROM can be programmed and/or erased as a single polysilicon EEPROM and/or as a double polysilicon EEPROM. The hybrid EEPROM memory cell includes a programmable capacitor disposed on a substrate. The programmable capacitor includes a floating gate forming a first polysilicon layer, an oxide-nitride-oxide (ONO) layer having disposed over a first surface of the floating gate, and a control gate forming a second polysilicon layer with the control gate formed over a first surface of the ONO layer to form a hybrid EEPROM having a single polysilicon layer and a double polysilicon EEPROM. The single polysilicon EEPROM includes the first polysilicon layer and the double polysilicon EEPROM includes the first and second polysilicon layers.
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公开(公告)号：EP2939039B1
公开(公告)日：2017-02-08
申请号：EP13780484.5
申请日：2013-10-10
发明人： WANG, Yigong
CPC分类号： H01L43/14 , G01R33/0052 , G01R33/077 , H01L43/065
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4.发明公开A VERTICAL HALL EFFECT ELEMENT WITH STRUCTURES TO IMPROVE SENSITIVITY 审中-公开VERTIKALES HALLEFFEKTELEMENT MIT STRUKTUREN ZUREMPFINDLICHKEITSERHÖHUNG
公开(公告)号：EP2962336A1
公开(公告)日：2016-01-06
申请号：EP14702402.0
申请日：2014-01-16
发明人： WANG, Yigong , COOPER, Richard, B.
CPC分类号： H01L43/065 , G01R33/077 , H01L43/14
摘要： A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the pickups, a pre-epi implant region, or two epi regions to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity.
摘要翻译： 垂直霍尔效应元件包括以下中的一个或多个：设置在垂直霍尔效应元件的拾取器之间的位置处的低电压P阱区域，设置在拾取器下方的Light-N区域，前Epi植入区域或两个epi 导致垂直霍尔效应元素的灵敏度提高。 一种方法导致具有改善的灵敏度的垂直霍尔效应元件。
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