公开(公告)号：EP0551721B1

公开(公告)日：1997-03-05

申请号：EP92310314.7

申请日：1992-11-12

申请人： Amano, Hiroshi ,  Akasaki, Isamu ,  PIONEER ELECTRONIC CORPORATION ,  TOYODA GOSEI CO., LTD.

发明人： Takeuchi,Tetsuya, ,  Akasaki,Isamu, ,  Watanabe,Atsushi,c/o Corp.R.& D.Lab., ,  Manabe,Katsuhide Toyoda Gosei Technical Centre, ,  Amano,Hiroshi Nijigaokahigashidanchi

IPC分类号： H01L29/201 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/007 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

公开(公告)号：EP0551721A3

公开(公告)日：1994-04-20

申请号：EP92310314.7

申请日：1992-11-12

申请人： Amano, Hiroshi ,  Akasaki, Isamu ,  PIONEER ELECTRONIC CORPORATION ,  TOYODA GOSEI CO., LTD.

发明人： Takeuchi,Tetsuya, ,  Akasaki,Isamu, ,  Watanabe,Atsushi,c/o Corp.R.& D.Lab., ,  Manabe,Katsuhide Toyoda Gosei Technical Centre, ,  Amano,Hiroshi Nijigaokahigashidanchi

IPC分类号： H01L29/201 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/007 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： A gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga 1-x Al x ) 1-y In y N (0≦x≦1, 0≦y≦1, excluding the case of x = 1 and y = 0). The aluminum/nitrogen intermediate layer suppresses the occurrence of crystal defects and thus the (Ga 1-x Al x ) 1-y In y N layer has very high crystallization and flatness. In a method of fabrication a silicon single crystal substrate is kept at a temperature of 400 to 1300°C and is held in an atmosphere of a metaloganic compound containing at least aluminum and a nitrogen containing compound to form a thin intermediate layer containing at least aluminum and nitrogen on a part or on the entirety of the surface of the single crystal substrate. At least one layer or multiple layers of a single crystal of (Ga 1-x Al x ) 1-y In y N are then formed on the intermediate layer.

摘要翻译： 一种氮化镓系半导体装置，其特征在于，具有：硅基板;由在硅基板上形成的至少包含铝和氮的化合物构成的中间层;以及（Ga 1-x Al x）1-y In y N（0≤x≤1 0≤y≤1，不包括x = 1和y = 0的情况）。 铝/氮中间层抑制晶体缺陷的发生，因此（Ga 1-x Al x）1-y In y N层具有非常高的结晶度和平坦度。 在制造硅单晶衬底的方法中，将温度保持在400-1300℃，并保持在至少含有铝和含氮化合物的金属化合物的气氛中以形成至少包含铝的薄中间层 和氮在单晶衬底表面的一部分或整个表面上。 然后在中间层上形成至少一层或多层（Ga1-xAlx）1-yInyN的单晶。

公开(公告)号：EP0551721A2

公开(公告)日：1993-07-21

申请号：EP92310314.7

申请日：1992-11-12

申请人： Amano, Hiroshi ,  Akasaki, Isamu ,  PIONEER ELECTRONIC CORPORATION ,  TOYODA GOSEI CO., LTD.

发明人： Takeuchi,Tetsuya, ,  Akasaki,Isamu, ,  Watanabe,Atsushi,c/o Corp.R.& D.Lab., ,  Manabe,Katsuhide Toyoda Gosei Technical Centre, ,  Amano,Hiroshi Nijigaokahigashidanchi

IPC分类号： H01L29/201 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/007 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： A gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga 1-x Al x ) 1-y In y N (0≦x≦1, 0≦y≦1, excluding the case of x = 1 and y = 0). The aluminum/nitrogen intermediate layer suppresses the occurrence of crystal defects and thus the (Ga 1-x Al x ) 1-y In y N layer has very high crystallization and flatness. In a method of fabrication a silicon single crystal substrate is kept at a temperature of 400 to 1300°C and is held in an atmosphere of a metaloganic compound containing at least aluminum and a nitrogen containing compound to form a thin intermediate layer containing at least aluminum and nitrogen on a part or on the entirety of the surface of the single crystal substrate. At least one layer or multiple layers of a single crystal of (Ga 1-x Al x ) 1-y In y N are then formed on the intermediate layer.

摘要翻译： 氮化镓型半导体器件包括硅衬底，由至少包含铝和氮并且形成在硅衬底上的化合物构成的中间层和（Ga 1-x Al x）1-y In y N（0≤x