公开(公告)号：EP1103076B1

公开(公告)日：2007-11-14

申请号：EP99945010.9

申请日：1999-08-02

申请人： THE CURATORS OF THE UNIVERSITY OF MISSOURI

发明人： WHITE, Henry, W. ,  ZHU, Shen ,  RYU, Yungryel

IPC分类号： H01L33/00

CPC分类号： H01L33/285 ,  C23C14/081 ,  C23C14/086 ,  C23C14/28 ,  C30B23/02 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/02963 ,  H01L31/1836 ,  H01L33/0087 ,  Y02E10/50 ,  Y10S148/113 ,  Y10T428/12681

摘要： A p-type zinc oxide film and process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 17 acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50cm 2 /Vs.

公开(公告)号：EP0576566A4

公开(公告)日：1995-03-15

申请号：EP92908776

申请日：1992-03-18

申请人： UNIV BOSTON

发明人： MOUSTAKAS THEODORE D

IPC分类号： C30B23/08 ,  C30B23/02 ,  C30B29/38 ,  H01L21/203 ,  H01L21/205 ,  H01L21/314 ,  H01L21/318 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0075 ,  Y10S148/113

摘要： This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100 DEG -400 DEG C. and the high temperature process is carried out at 600 DEG -900 DEG C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.

公开(公告)号：EP0377940A3

公开(公告)日：1991-05-29

申请号：EP89310004.0

申请日：1989-09-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ohba, Yasuo Intellectual Property Division ,  Izumiya, Toshihide Intellectual Property Division ,  Hatano, Ako Intellectual Property Division

IPC分类号： H01L29/201 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01S5/32341 ,  H01S5/343 ,  H01S5/34333 ,  Y10S148/065 ,  Y10S148/113

摘要： A compound semiconductor material includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.

公开(公告)号：EP0379359A3

公开(公告)日：1990-12-19

申请号：EP90300506.4

申请日：1990-01-18

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yoshida, Katsuhito, c/o Itami Works of ,  Tsuji, Kazuswo, c/o Itami Works of

IPC分类号： C30B29/04 ,  B01J3/06 ,  C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： H01L33/32 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C30B9/00 ,  C30B29/04 ,  C30B29/38 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01L33/007 ,  Y10S148/113 ,  Y10T428/30

摘要： A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600°C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.

公开(公告)号：EP0379359A2

公开(公告)日：1990-07-25

申请号：EP90300506.4

申请日：1990-01-18

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yoshida, Katsuhito, c/o Itami Works of ,  Tsuji, Kazuswo, c/o Itami Works of

IPC分类号： C30B29/04 ,  B01J3/06 ,  C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： H01L33/32 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C30B9/00 ,  C30B29/04 ,  C30B29/38 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01L33/007 ,  Y10S148/113 ,  Y10T428/30

摘要： A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600°C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.

摘要翻译： 提供了可用作能够在高温（即500至600℃）下操作的二极管的复合材料或能够发射紫外线的半导体光学器件，该复合材料包括形成有绝缘的单晶金刚石和单晶立方氮化硼 单晶金刚石的一个表面作为衬底，使得单晶立方氮化硼在衬底上具有相同的平面折射率。

公开(公告)号：EP1480260A1

公开(公告)日：2004-11-24

申请号：EP02775533.9

申请日：2002-11-12

申请人： Nikko Materials Company, Limited

发明人： SASAKI, Shinichi, c/o NIKKO MATERIALS CO., LTD ,  NAKAMURA, Masashi, c/o NIKKO MATERIALS CO., LTD ,  SATO, Kenji, c/o NIKKO MATERIALS CO., LTD

IPC分类号： H01L21/20 ,  H01L21/205 ,  C23C16/34 ,  C30B29/38

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S148/113

摘要： A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming a third crystalline layer (a GaN system thick film layer). The three crystalline layers are respectively reared on conditions different from one another.

摘要翻译： 在衬底上生长晶体（例如，GaN系化合物半导体晶体）的方法至少包括形成第一晶体层（GaN系缓冲层），形成第二晶体层（GaN系中间层）和形成 第三晶体层（GaN系厚膜层）。 三个结晶层分别在彼此不同的条件下饲养。

公开(公告)号：EP0576566B1

公开(公告)日：1999-05-26

申请号：EP92908776.5

申请日：1992-03-18

申请人： TRUSTEES OF BOSTON UNIVERSITY

发明人： MOUSTAKAS, Theodore, D.

IPC分类号： H01L21/203 ,  C30B25/02

CPC分类号： H01L33/32 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0075 ,  Y10S148/113

摘要： This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100 DEG -400 DEG C. and the high temperature process is carried out at 600 DEG -900 DEG C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.

公开(公告)号：EP0377940B1

公开(公告)日：1994-11-17

申请号：EP89310004.0

申请日：1989-09-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ohba, Yasuo Intellectual Property Division ,  Izumiya, Toshihide Intellectual Property Division ,  Hatano, Ako Intellectual Property Division

IPC分类号： H01L29/201 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01S5/32341 ,  H01S5/343 ,  H01S5/34333 ,  Y10S148/065 ,  Y10S148/113

公开(公告)号：EP0551721A2

公开(公告)日：1993-07-21

申请号：EP92310314.7

申请日：1992-11-12

申请人： Amano, Hiroshi ,  Akasaki, Isamu ,  PIONEER ELECTRONIC CORPORATION ,  TOYODA GOSEI CO., LTD.

发明人： Takeuchi,Tetsuya, ,  Akasaki,Isamu, ,  Watanabe,Atsushi,c/o Corp.R.& D.Lab., ,  Manabe,Katsuhide Toyoda Gosei Technical Centre, ,  Amano,Hiroshi Nijigaokahigashidanchi

IPC分类号： H01L29/201 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/007 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： A gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga 1-x Al x ) 1-y In y N (0≦x≦1, 0≦y≦1, excluding the case of x = 1 and y = 0). The aluminum/nitrogen intermediate layer suppresses the occurrence of crystal defects and thus the (Ga 1-x Al x ) 1-y In y N layer has very high crystallization and flatness. In a method of fabrication a silicon single crystal substrate is kept at a temperature of 400 to 1300°C and is held in an atmosphere of a metaloganic compound containing at least aluminum and a nitrogen containing compound to form a thin intermediate layer containing at least aluminum and nitrogen on a part or on the entirety of the surface of the single crystal substrate. At least one layer or multiple layers of a single crystal of (Ga 1-x Al x ) 1-y In y N are then formed on the intermediate layer.

摘要翻译： 氮化镓型半导体器件包括硅衬底，由至少包含铝和氮并且形成在硅衬底上的化合物构成的中间层和（Ga 1-x Al x）1-y In y N（0≤x

公开(公告)号：EP0216932B1

公开(公告)日：1992-05-13

申请号：EP86901511.5

申请日：1986-02-27

申请人： Research Development Corporation of Japan ,  JAPAN METALS & CHEMICALS CO., LTD. ,  THE FURUKAWA ELECTRIC CO., LTD. ,  Hirai, Toshio

发明人： Matsuda, Toshitsugu ,  Nakae, Hiroyuki ,  Hirai, Toshio

IPC分类号： C01B21/064 ,  C23C16/34

CPC分类号： C23C16/342 ,  C01B21/064 ,  C01P2002/72 ,  C01P2004/03 ,  C04B35/583 ,  C04B35/5831 ,  C30B35/002 ,  Y10S148/113

摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.

摘要翻译： 高纯度，高密度的菱形多晶氮化硼，其基本上包含菱形晶体并且具有朝向一个方向的三重对称轴（与六角形表示的轴c平行的轴），其可以以任意质量或薄 通过化学气相沉积工艺将硼源气体和氮源气体以及任选的稀释气体和载气引入具有加热基底的反应器中，以在基底上沉积氮化硼，同时提供氮源气体 - 和/或围绕加热基座的载气扩散层。 所得到的氮化硼作为半导体，熔化用坩埚，各种高温夹具，高频绝缘体，微波通过孔，半导体用硼源等非常有用，而且作为高压相 立方氮化硼。