利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.015 秒)

    GLASS SUBSTRATE FOR SEMICONDUCTOR DEVICE VIA
    1.
    发明公开
    GLASS SUBSTRATE FOR SEMICONDUCTOR DEVICE VIA 审中-公开
    GLASSUBSTRATFÜREINEHALBLEITERGERÄTEDURCHFHHUNG

    公开(公告)号：EP2562805A1

    公开(公告)日：2013-02-27

    申请号：EP11771935.1

    申请日：2011-04-14

    申请人： Asahi Glass Company, Limited

    发明人： KOIKE Akio ,  ONO Motoshi ,  MURAKAMI Ryota ,  KIKUGAWA Shinya

    IPC分类号： H01L23/15

    CPC分类号： H01L23/15 ,  H01L21/4807 ,  H01L23/49827 ,  H01L2924/0002 ,  Y10T428/24273 ,  Y10T428/24298 ,  H01L2924/00

    摘要： A glass substrate for forming a through-substrate via of a semiconductor device is provided, in which the strength is improved compared to that of the conventional glass substrate. The glass substrate for forming the through-substrate via of the semiconductor device according to the present invention includes a first surface and a second surface, and penetration holes extending from the first surface to the second surface, and is characterized in that at least one of the first and second surfaces is chemically strengthened.

    摘要翻译： 提供了一种用于形成半导体器件的贯通基板通孔的玻璃基板，其中与传统的玻璃基板相比，其强度得到改善。 用于形成根据本发明的半导体器件的贯穿基板通孔的玻璃基板包括第一表面和第二表面以及从第一表面延伸到第二表面的穿透孔，其特征在于，至少一个 第一和第二表面被化学强化。

    ALKALI-FREE GLASS AND METHOD FOR PRODUCING SAME
    3.
    发明公开
    ALKALI-FREE GLASS AND METHOD FOR PRODUCING SAME 审中-公开
    无碱玻璃及其制造方法

    公开(公告)号：EP2857366A1

    公开(公告)日：2015-04-08

    申请号：EP13801109.3

    申请日：2013-06-04

    申请人： Asahi Glass Company, Limited

    发明人： NISHIZAWA Manabu ,  TOKUNAGA Hirofumi ,  KOIKE Akio

    IPC分类号： C03C3/091 ,  C03C3/093

    CPC分类号： C03C3/093 ,  C03C3/091

    摘要： The present invention relates to an alkali-free glass having a strain point of 680 to 735°C, an average thermal expansion coefficient at from 50 to 350°C of from 30×10 -7 to 43×10 -7 /°C, a temperature T 2 at which glass viscosity reaches 10 2 dPa·s of 1,710°C or lower, and a temperature T 4 at which the glass viscosity reaches 10 4 dPa·s of 1,310°C or lower, and containing, indicated by mol% on the basis of oxides, SiO 2 63 to 74, Al 2 O 3 11.5 to 16, B 2 O 3 exceeding 1.5 to 5, MgO 5.5 to 13, CaO 1.5 to 12, SrO 1.5 to 9, BaO 0 to 1, and ZrO 2 0 to 2, in which MgO+CaO+SrO+BaO is from 15.5 to 21, MgO/(MgO+CaO+SrO+BaO) is 0.35 or more, CaO/(MgO+CaO+SrO+BaO) is 0.50 or less, and SrO/(MgO+CaO+SrO+BaO) is 0.50 or less.

    摘要翻译： 本发明涉及应变点为680〜735℃，50〜350℃的平均热膨胀系数为30×10 -7〜43×10 -7 /℃的无碱玻璃， 玻璃粘度达到102dPa·s时的温度T2为1710℃以下，玻璃粘度达到104dPa·s时的温度T4为1310℃以下，以摩尔％计含有 的氧化物，SiO 2 63至74，Al 2 O 3 11.5至16，B 2 O 3超过1.5至5，MgO 5.5至13，CaO 1.5至12，SrO 1.5至9，BaO 0至1和ZrO 2 0至2，其中MgO + CaO + SrO + BaO为15.5〜21，MgO /（MgO + CaO + SrO + BaO）为0.35以上，CaO /（MgO + CaO + SrO + BaO）为0.50以下，SrO /（MgO + CaO + SrO + BaO）为0.50以下。

    ALKALI FREE GLASS AND METHOD FOR PRODUCING ALKALI FREE GLASS
    4.
    发明公开
    ALKALI FREE GLASS AND METHOD FOR PRODUCING ALKALI FREE GLASS 审中-公开
    ALKALIFREIES GLAS U​​ND VERFAHREN ZUR HERSTELLUNG VON ALKALIFREIEM GLAS

    公开(公告)号：EP2650262A1

    公开(公告)日：2013-10-16

    申请号：EP11847758.7

    申请日：2011-12-02

    申请人： Asahi Glass Company, Limited

    发明人： TSUJIMURA Tomoyuki ,  NISHIZAWA Manabu ,  KOIKE Akio

    IPC分类号： C03C3/087 ,  C03C1/00 ,  C03C3/091 ,  C03C3/093

    CPC分类号： C03C3/091 ,  C03C3/087

    摘要： The present invention relates to an alkali-free glass having a strain point of 725°C or higher, an average thermal expansion coefficient at from 50 to 300°C of from 30×10 -7 to 40×10 -7 /°C, a temperature T 2 at which a glass viscosity is 10 2 dPa·s of 1,710°C or lower, and a temperature T 4 at which a glass viscosity is 10 4 dPa·s of 1,320°C or lower, the alkali-free glass including, in terms of mol% on the basis of oxides, SiO 2 : 66 to 70, Al 2 O 3 : 12 to 15, B 2 O 3 : 0 to 1.5, MgO: more than 9.5 and 13 or less, CaO: 4 to 9, SrO: 0.5 to 4.5, BaO: 0 to 1, and ZrO 2 : 0 to 2, in which MgO+CaO+SrO+BaO is from 17 to 21, MgO/(MgO+CaO+SrO+BaO) is 0.4 or more, MgO/(MgO+CaO) is 0.4 or more, MgO/(MgO+SrO) is 0.6 or more, and the alkali-free glass does not substantially contain an alkali metal oxide.

    摘要翻译： 本发明涉及应变点为725℃以上，50〜300℃的平均热膨胀系数为30×10 -7〜40×10 -7 /℃的无碱玻璃， 玻璃粘度为10 2 dPa·s为1710℃以下的温度T 2，玻璃粘度为10 4 dPa·s的温度T 4为1320℃以下，无碱玻璃 包括以氧化物为基准的摩尔％，SiO 2：66〜70，Al 2 O 3：12〜15，B 2 O 3：0〜1.5，MgO：9.5以上13以下，CaO： 4〜9，SrO：0.5〜4.5，BaO：0〜1，ZrO 2：0〜2，MgO + CaO + SrO + BaO为17〜21，MgO /（MgO + CaO + SrO + BaO） 为0.4以上，MgO /（MgO + CaO）为0.4以上，MgO /（MgO + SrO）为0.6以上，无碱玻璃基本不含有碱金属氧化物。

    GLASS SUBSTRATE FOR FORMING SEMICONDUCTOR DEVICE VIA
    5.
    发明公开
    GLASS SUBSTRATE FOR FORMING SEMICONDUCTOR DEVICE VIA 审中-公开
    琉璃AT UR UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG

    公开(公告)号：EP2562806A1

    公开(公告)日：2013-02-27

    申请号：EP11771938.5

    申请日：2011-04-14

    申请人： Asahi Glass Company, Limited

    发明人： KOIKE Akio ,  ONO Motoshi ,  MURAKAMI Ryota ,  KIKUGAWA Shinya

    IPC分类号： H01L23/32 ,  H01L23/15

    CPC分类号： H01L23/15 ,  B23K26/382 ,  B23K26/40 ,  B23K2203/16 ,  B23K2203/42 ,  B23K2203/50 ,  C03C3/091 ,  C03C3/093 ,  H01L23/49827 ,  H01L2924/0002 ,  Y10T428/24273 ,  H01L2924/00

    摘要： A glass substrate for forming a through-substrate via of a semiconductor device is provided, in which the α-ray emission is significantly suppressed and to which a laser beam machining is possible. The present invention is characterized in that a plurality of penetration holes is provided, and an α-count is 0.05 c/cm 2 ·h or less, a SiO 2 content is 40 wt% or higher, and a sum total content of Li 2 O (wt%) + Na 2 O (wt%) + K 2 O (Wt%) is 6.0 wt% or lower, and an average coefficient of thermal expansion at 50°C to 350°C is in a range of 20 x 10 -7 /K to 40 x 10 -7 /K.

    摘要翻译： 提供了一种用于形成半导体器件的贯通基板通孔的玻璃基板，其中，±射线发射受到显着抑制，激光束加工成为可能。 本发明的特征在于，设有多个贯通孔，±计数为0.05c / cm 2·h以下，SiO 2含量为40重量％以上，Li 2 O（wt％）+ Na 2 O（wt％）+ K 2 O（Wt％）为6.0wt％以下，在50℃〜350℃的平均热膨胀系数为20× 10 -7 / K至40×10 -7 / K。

    NON-ALKALI GLASS, AND PROCESS FOR PRODUCTION OF NON-ALKALI GLASS
    6.
    发明公开
    NON-ALKALI GLASS, AND PROCESS FOR PRODUCTION OF NON-ALKALI GLASS 审中-公开
    NICHTALKALISCHES GLAS U​​ND VERFAHREN ZUR HERSTELLUNG DES NICHTALKALISCHEN GLASES

    公开(公告)号：EP2660213A1

    公开(公告)日：2013-11-06

    申请号：EP11852770.4

    申请日：2011-12-20

    申请人： Asahi Glass Company, Limited

    发明人： TSUJIMURA Tomoyuki ,  NISHIZAWA Manabu ,  KOIKE Akio

    IPC分类号： C03C3/087 ,  C03C1/00 ,  C03C3/091 ,  C03C3/093 ,  G02B1/00 ,  G02F1/1333

    CPC分类号： C03C3/091 ,  C03C3/087 ,  C03C3/093

    摘要： The present invention relates to an alkali-free glass having a strain point of 735°C or higher, an average thermal expansion coefficient at from 50 to 350°C of from 30×10 -7 to 40×10 -7 /°C, a temperature T 2 at which a glass viscosity is 10 2 dPa·s of 1,710°C or lower, a temperature T 4 at which a glass viscosity is 10 4 dPa·s of 1,340°C or lower, and a devitrification temperature of 1,330°C or lower, the alkali-free glass including, in terms of mol% on the basis of oxides: SiO 2 66 to 69, Al 2 O 3 12 to 15, B 2 O 3 0 to 1.5, MgO 6 to 9.5, CaO 7 to 9, SrO 0.5 to 3, BaO 0 to 1, and ZrO 2 0 to 2, in which MgO+CaO+SrO+BaO is from 16 to 18.2, MgO/(MgO+CaO+SrO+BaO) is 0.35 or more, MgO/(MgO+CaO) is 0.40 or more and less than 0.52, and MgO/(MgO+SrO) is 0.45 or more.

    摘要翻译： 本发明涉及应变点为735℃以上，50〜350℃的平均热膨胀系数为30×10 -7〜40×10 -7 /℃的无碱玻璃， 玻璃粘度为10 2 dPa·s为1710℃以下的温度T 2，玻璃粘度为10 4 dPa·s的温度T 4为1340℃以下，失透温度为1330℃ ℃以下的无碱玻璃，以氧化物：SiO 2 66〜69，Al 2 O 3 12〜15，B 2 O 3 0〜1.5，MgO 6〜9.5， CaO 7〜9，SrO 0.5〜3，BaO 0〜1，ZrO 2 0〜2，MgO + CaO + SrO + BaO为16〜18.2，MgO /（MgO + CaO + SrO + BaO）为0.35 以上，MgO /（MgO + CaO）为0.40以上且小于0.52，MgO /（MgO + SrO）为0.45以上。

    PROCESS FOR PRODUCING POROUS QUARTZ GLASS OBJECT, AND OPTICAL MEMBER FOR EUV LITHOGRAPHY
    9.
    发明公开
    PROCESS FOR PRODUCING POROUS QUARTZ GLASS OBJECT, AND OPTICAL MEMBER FOR EUV LITHOGRAPHY 审中-公开
    方法生产用于EUV光刻的多孔QUARZGLAS点和光学元件

    公开(公告)号：EP2402293A1

    公开(公告)日：2012-01-04

    申请号：EP10746232.7

    申请日：2010-02-24

    申请人： Asahi Glass Company, Limited

    发明人： MITSUMORI Takahiro ,  IWAHASHI Yasutomi ,  KOIKE Akio

    IPC分类号： C03B8/04 ,  C03B20/00 ,  C03C3/06 ,  G03F1/16 ,  G03F7/20 ,  H01L21/027

    CPC分类号： C03B19/1423 ,  C03B2201/42 ,  C03B2207/06 ,  C03B2207/20 ,  C03C3/06 ,  C03C2201/42 ,  C03C2203/44

    摘要： The present invention relates to a process for producing a porous quartz glass body containing hydrolyzing a metal dopant precursor and an SiO 2 precursor in a flame of a burner to form glass fine particles, and depositing and growing the formed glass fine particles on a base material, in which the burner has at least two nozzles, and in which a mixed gas containing (A) a metal dopant precursor gas, (B) an SiO 2 precursor gas, (C) one gas of H 2 and O 2 , and (D) one or more gases selected from the group consisting of a rare gas, N 2 , CO 2 , a hydrogen halide and H 2 O, with a proportion of the gas (D) being from 5 to 70 mol%; and (E) the other gas of H 2 and O 2 of (C), are fed into different nozzles of the burner from each other.

    摘要翻译： 本发明涉及一种用于在基材上制造多孔石英玻璃体含在燃烧器以形成玻璃微粒的火焰水解的金属掺杂剂前体和SiO 2前体，以及沉积和生长所形成的玻璃微粒 ，其中，所述燃烧器具有至少两个喷嘴，并且其中在SiO 2的前体气体，（C）的H 2和O 2一种气体，并混合气体含有（A）的金属掺杂剂前体气体，（B）（ D）一种或选自稀有气体，N 2，CO 2，卤化氢和H 2 O，与为5〜70摩尔％的气体（D）的比例选择多种气体; 和（e）的H 2和（C）的O 2的其它气体被送入从海誓山盟燃烧器的不同喷嘴。

    ALKALI-FREE GLASS AND ALKALI-FREE GLASS PLATE USING SAME
    10.
    发明公开
    ALKALI-FREE GLASS AND ALKALI-FREE GLASS PLATE USING SAME 审中-公开
    ALKALIFREIES GLAS U​​ND ALKALIFREIE GLASPLATTE DAMIT

    公开(公告)号：EP2860161A1

    公开(公告)日：2015-04-15

    申请号：EP13801051.7

    申请日：2013-06-05

    申请人： Asahi Glass Company, Limited

    发明人： TOKUNAGA Hirofumi ,  NISHIZAWA Manabu ,  KOIKE Akio

    IPC分类号： C03C3/091 ,  C03C15/00

    CPC分类号： C03C3/093 ,  C03C3/091 ,  C03C15/00

    摘要： The present invention relates to an alkali-free glass having a strain point of from 680 to 735°C, an average thermal expansion coefficient at from 50 to 350°C of from 30×10 -7 to 43×10 -7 /°C, and a specific gravity of 2.60 or less, and containing, indicated by mol% on the basis of oxides, SiO 2 65 to 69%, Al 2 O 3 11.5 to 14%, B 2 O 3 3 to 6.5%, MgO 1 to 5%, CaO 7.5 to 12%, SrO 0 to 1%, BaO 0.5 to 6%, and ZrO 2 0 to 2%.

    摘要翻译： 本发明涉及应变点为680〜735℃，50〜350℃的平均热膨胀系数为30×10 -7〜43×10 -7 /℃的无碱玻璃 ，比重为2.60以下，以氧化物摩尔％表示的SiO 2为65〜69％，Al 2 O 3为11.5〜14％，B 2 O 3为3〜6.5％，MgO 1 至5％，CaO 7.5〜12％，SrO 0〜1％，BaO 0.5〜6％，ZrO 2 0〜2％。