摘要:
Layered glass structures and fabrication methods are described. The methods include depositing soot on a dense glass substrate to form a composite structure and sintering the composite structure to form a layered glass structure. The dense glass substrate may be derived from an optical fiber preform that has been modified to include a planar surface. The composite structure may include one or more soot layers. The layered glass structure may be formed by combining multiple composite structures to form a stack, followed by sintering and fusing the stack. The layered glass structure may further be heated to softening and drawn to control linear dimensions. The layered glass structure or drawn layered glass structure may be configured as a planar waveguide.
摘要:
The invention is directed to a low expansion glass with reduced striae, the glass have a point-to-point variation in titania content is 0.1 wt % or less through its thickness and a CTE of 0±3 ppb/° C. in the temperature range 5-35° C. The invention is further directed to a method for producing the low expansion glass by using a method in which the time for repetition of the oscillation patterns used in the process are 10 minutes or less. In addition, the low expansion glass of the invention can have striae further reduced by heat-treating the glass at temperatures above 1600° C. for a time in the range of 48-160 hours.
摘要:
A titania-doped quartz glass suited as an EUV lithographic member is prepared by feeding a silicon-providing reactant gas and a titanium-providing reactant gas through a burner along with hydrogen and oxygen, subjecting the reactant gases to oxidation or flame hydrolysis to form synthetic silica-titania fine particles, depositing the particles on a rotating target, and concurrently melting and vitrifying the deposited particles to grow an ingot of titania-doped quartz glass. The target is retracted such that the growth front of the ingot may be spaced a distance of at least 250 mm from the burner tip.
摘要:
Silica-titania glasses with small temperature variations in coefficient of thermal expansion over a wide range of zero-crossover temperatures and methods for making the glasses. The method includes a cooling protocol with controlled anneals over two different temperature regimes. A higher temperature controlled anneal may occur over a temperature interval from 750 °C - 950 °C or a sub-interval thereof. A lower temperature controlled anneal may occur over a temperature interval from 650 °C - 875 °C or a sub-interval thereof. The controlled anneals permit independent control over CTE slope and Tzc of silica-titania glasses. The independent control provides CTE slope and Tzc values for silica-titania glasses of fixed composition over ranges heretofore possible only through variations in composition.
摘要:
Die Erfindung betrifft ein Verfahren zur Herstellung eines mit Titan und Fluor codotierten Kieselglas-Rohling für den Einsatz in der EUV-Lithographie, mit einer internen Transmission von mindestens 60 % im Wellenlängenbereich von 400 nm bis 700 nm bei einer Probendicke von 10 mm, wobei das Titan in den Oxidationsformen Ti 3+ und Ti 4+ vorliegt, umfassend die Verfahrensschritte: (a) Herstellen eines TiO 2 -SiO 2 -Sootkörpers mittels Flammenhydrolyse von Silizium und Titan enthaltenden Ausgangssubstanzen (b) Fluorieren des Sootkörpers unter Bildung eines mit Fluor dotierten TiO 2 -SiO 2 -Sootkörpers, (c) Behandeln des mit Fluor dotierten TiO 2 -SiO 2 -Sootkörpers in einer Wasserdampf enthaltenden Atmosphäre unter Bildung eines konditionierten Sootkörpers, und (d) Verglasen des konditionierten Sootkörpers unter Bildung des Rohlings aus Titan-dotiertem Kieselglas mit einen mittleren OH-Gehalt im Bereich von 10 bis 100 Gew.-ppm und mit einem mittleren Fluorgehalt im Bereich von 2.500 bis 10.000 Gew.-ppm. Die durch die Wasserdampfbehandlung eingeführten OH-Gruppen zeigen auch nach Einwirkung von reduzierender Atmosphäre auf den Rohling eine verlängerte Wirkungsperiode im Sinne eines Depots für die interne Oxidation von Ti 3+ Ionen in Ti 4+ Ionen, so dass das Verhältnis von Ti 3+ /Ti 4+ auf einen Wert ≤ 2 x 10 -4 einstellbar ist.