公开(公告)号：EP1914286A1

公开(公告)日：2008-04-23

申请号：EP06782286.6

申请日：2006-08-03

申请人： Asahi Glass Company, Limited ,  AGC Seimi Chemical Co., Ltd.

发明人： KAMIYA, Hiroyuki, c/o Asahi Glass Company, Limited ,  TSUGITA, Katsuyuki, c/o AGC SEMI CHEMICAL.LTD

IPC分类号： C09K3/14 ,  H05K3/26

CPC分类号： H05K3/045 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  H05K3/107 ,  H05K3/26 ,  H05K2201/0209 ,  H05K2203/025 ,  H05K2203/0786

摘要： To provide a polishing compound that is capable of minimizing formation of scratches on an object to be polished, such as a resin substrate or a metal wiring, and polishing at a high removal rate. To further provide a polishing method that is capable of minimizing formation of scratches on a resin substrate or a metal wiring, and improving the throughput.
The polishing compound T comprises an oxidizing agent, an electrolyte and an aqueous medium, wherein ions formed from the electrolyte comprise ammonium ions, at least one type of organic carboxylate ions selected from the group consisting of polycarboxylate ions and hydroxycarboxylate ions, and at least one type of ions selected from the group consisting of carbonate ions, hydrogencarbonate ions, sulfate ions and acetate ions.
A wiring trench 2 is formed in a resin substrate 1, then a wiring metal 3 is embedded in the wiring trench 2, and the wiring metal 3 is polished by using the above-mentioned polishing compound, whereby it is possible to minimize formation of scratches on the metal wiring 3 and to improve the throughput.

摘要翻译： 提供能够最小化待研磨物体（例如树脂基板或金属布线）上的划痕的形成的抛光剂，并以高的去除率进行研磨。 为了进一步提供能够最小化在树脂基板或金属布线上形成划痕并且提高生产量的抛光方法。 抛光化合物T包括氧化剂，电解质和水性介质，其中由电解质形成的离子包含铵离子，至少一种选自聚羧酸根离子和羟基羧酸根离子的有机羧酸根离子，以及至少一种 选自碳酸根离子，碳酸氢根离子，硫酸根离子和乙酸根离子的离子类型。 在树脂基板1上形成布线沟槽2，然后将布线金属3埋设在布线沟槽2中，并且通过使用上述抛光剂对布线金属3进行研磨，从而可以最小化划痕的形成 并且提高生产量。