公开(公告)号：EP2794790B1

公开(公告)日：2018-02-21

申请号：EP11878201.0

申请日：2011-12-21

Applicant: BASF SE

Inventor： RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  SCHADE, Christian ,  VENKATARAMAN, Shyam Sundar ,  SU, Eason Yu-Shen ,  USMAN Ibrahim, Sheik Ansar ,  GAO, Ning

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105

CPC classification number: C09G1/04 ,  C09G1/00 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/302 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/461

Abstract: A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(OR2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

公开(公告)号：EP2742103B1

公开(公告)日：2016-09-21

申请号：EP12819882.7

申请日：2012-07-30

Applicant: BASF SE

Inventor： NOLLER, Bastian Marten ,  DRESCHER, Bettina ,  GILLOT, Christophe ,  LI, Yuzhuo ,  GAO, Ning

IPC: H01L21/306 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

公开(公告)号：EP2742103A2

公开(公告)日：2014-06-18

申请号：EP12819882.7

申请日：2012-07-30

Applicant: BASF SE

Inventor： NOLLER, Bastian Marten ,  DRESCHER, Bettina ,  GILLOT, Christophe ,  LI, Yuzhuo ,  GAO, Ning

IPC: C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

Abstract: A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si
1-x Ge
x material with 0.1 ≤ x 11 R
12 R
13 R
14 ]
+ , wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (-OH), alkoxy (-OR
1 ), heterocyclic alkoxy (-OR
1 as part of a heterocyclic structure), carboxylic acid (-COOH), carboxylate (-COOR
2 ), amino (-NR
3 R
4 ), heterocyclic amino (-NR
3 R
4 as part of a heterocyclic structure), imino (=N-R
5 or -N=R
6 ), heterocyclic imino (=N-R
5 or -N=R
6 as part of a heterocyclic structure), phosphonate (-P(=0)(OR
7 )(OR
8 ) ), phosphate (-0-P(=0)(OR
9 )(OR
10 ) ), phosphonic acid (-P(=0)(OH)
2 ), phosphoric acid (-0-P(=0)(OH)
2 ) moiety, or their protonated or deprotonated forms, R
1 , R
2 , R
7 , R
9 is - independently from each other - alkyl, aryl, alkylaryl, or arylalkyl, R
3 , R
4 , R
5 , R
8 , R
10 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, R
6 is alkylene, or arylalkylene, R
11 , R
12 , R
13 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, and R
11 , R
12 , R
13 does not comprise any moiety (Z), R
14 is alkyl, aryl, alkylaryl, or arylalkyl, and R
14 does not comprise any moiety (Z), and (D) an aqueous medium.

公开(公告)号：EP2794790A1

公开(公告)日：2014-10-29

申请号：EP11878201.0

申请日：2011-12-21

Applicant: BASF SE

Inventor： RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  SCHADE, Christian ,  VENKATARAMAN, Shyam Sundar ,  SU, Eason Yu-Shen ,  USMAN Ibrahim, Sheik Ansar ,  GAO, Ning

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304

CPC classification number: C09G1/04 ,  C09G1/00 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/302 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/461

Abstract: A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(=O)(OR1)(OR2) ) or phosphonic acid ( P(=O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R
1 is alkyl, aryl, alkylaryl, or arylalkyl, R
2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

公开(公告)号：EP2688966A1

公开(公告)日：2014-01-29

申请号：EP12760432.0

申请日：2012-03-19

Applicant: BASF SE

Inventor： NOLLER, Bastian ,  LAUTER, Michael ,  SUGIHARTO, Albert Budiman ,  LI, Yuzhuo ,  RUSHING, Kenneth ,  FRANZ, Diana ,  BÖHN, Roland ,  GAO, Ning

IPC: C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/30625

Abstract: A chemical-mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of N-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

公开(公告)号：EP2688966B1

公开(公告)日：2016-03-09

申请号：EP12760432.0

申请日：2012-03-19

Applicant: BASF SE

Inventor： NOLLER, Bastian ,  LAUTER, Michael ,  SUGIHARTO, Albert Budiman ,  LI, Yuzhuo ,  RUSHING, Kenneth ,  FRANZ, Diana ,  BÖHN, Roland ,  GAO, Ning

IPC: C09G1/02 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/30625

公开(公告)号：EP2753670A1

公开(公告)日：2014-07-16

申请号：EP12830462.3

申请日：2012-09-04

Applicant: BASF SE

Inventor： LI, Yuzhuo ,  LAUTER, Michael ,  LANGE, Roland ,  GAO, Ning

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09G1/00 ,  C09K13/00 ,  C23F1/00 ,  H01L21/30625 ,  H01L21/31053

Abstract: A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R
1 is alkyl, aryl, or alkylaryl, R
2 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R
3 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R
4 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R
5 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, and the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20, and (C) an aqueous medium.

公开(公告)号：EP2753670B1

公开(公告)日：2016-06-22

申请号：EP12830462.3

申请日：2012-09-04

Applicant: BASF SE

Inventor： LI, Yuzhuo ,  LAUTER, Michael ,  LANGE, Roland ,  GAO, Ning

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09G1/00 ,  C09K13/00 ,  C23F1/00 ,  H01L21/30625 ,  H01L21/31053

公开(公告)号：EP2684213A1

公开(公告)日：2014-01-15

申请号：EP12757663.5

申请日：2012-02-28

Applicant: BASF SE

Inventor： LI, Yuzhuo ,  WANG, Changxue ,  SHEN, Daniel Kwo-Hung ,  GAO, Ning

IPC: H01L21/50

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76898

Abstract: Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1 ) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.