公开(公告)号：EP2250126A2

公开(公告)日：2010-11-17

申请号：EP09708165.7

申请日：2009-02-05

Applicant: BASF SE

Inventor： HAASS, Frank

IPC: C01B19/00 ,  H01L23/38 ,  H01L35/16 ,  H01L35/34

CPC classification number: C01B19/002 ,  C01B19/007 ,  C01P2006/40 ,  H01L23/38 ,  H01L35/16 ,  H01L35/34 ,  H01L2924/0002 ,  Y02P20/129 ,  H01L2924/00

Abstract: The p- or n-conductive semiconductor material contains a compound of general formula (I) Sn
a Pb
1-a-(x1+... +xn) A
1
x1 ...A
n
xn (Te
1-p-q-r Se
p S
q X
r )
1+z in which 0.05 1 ... A
n differ from one another and are selected from the group of elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X F, Cl, Br or l, 0 ≤ p ≤ 1, 0 ≤ q ≤ 1, 0 ≤ r ≤ 0.01, - 0.01 ≤ z ≤ 0.01, with the proviso that p + q + r ≤ 1 and a + x1 +... + xn ≤ 1. The invention also relates to a method for producing a semiconductor material of this type, to a thermoelectric generator or Peltier arrangement and to the use of the same.

公开(公告)号：EP2457270B1

公开(公告)日：2014-07-09

申请号：EP10737034.8

申请日：2010-07-23

Applicant: BASF SE

Inventor： HAASS, Frank ,  STEFAN, Madalina Andreea ,  DEGEN, Georg

IPC: H01L35/08 ,  H01L35/32 ,  H01L35/04 ,  H01L35/06

CPC classification number: H01L35/06 ,  H01L35/32

公开(公告)号：EP2415090B1

公开(公告)日：2013-10-23

申请号：EP10711894.5

申请日：2010-03-31

Applicant: BASF SE

Inventor： STEFAN, Madalina Andreea ,  SCHIERLE-ARNDT, Kerstin ,  HUBER, Günther ,  HAASS, Frank ,  BLACKBURN, John Stuart ,  JONES, Ivor Wynn ,  STACKPOOL, Francis ,  HEAVENS, Stephen

IPC: H01L35/32

CPC classification number: H01L35/32

公开(公告)号：EP2633562A1

公开(公告)日：2013-09-04

申请号：EP11835723.5

申请日：2011-10-26

Applicant: BASF SE

Inventor： STEFAN, Madalina Andreea ,  HAASS, Frank

IPC: H01L35/02 ,  H01L35/28 ,  H01L35/34

CPC classification number: H01L35/34 ,  H01L35/32

Abstract: In a process for the production of a thermoelectric module, thermoelectric legs which are electrically contact-connected in series are coated so as to be covered with an electrically insulating solid material.

公开(公告)号：EP2227834B1

公开(公告)日：2011-08-03

申请号：EP08867452.8

申请日：2008-12-19

Applicant: BASF SE

Inventor： KUEHLING, Klaus ,  STERZEL, Hans-Josef ,  HAASS, Frank

IPC: H01L35/16 ,  H01L35/34 ,  B21C23/00

CPC classification number: B21C23/002 ,  H01L35/16 ,  H01L35/34

Abstract: With respect to a method for reducing the thermal conductivity and for increasing the thermoelectric efficiency of thermoelectric materials based on lead chalcogenides or skutterudites, the thermoelectrical materials are extruded at a temperature below their melting point and a pressure in the range of 300 to 1000 MPa.

公开(公告)号：EP2460194B1

公开(公告)日：2018-02-21

申请号：EP10736704.7

申请日：2010-07-23

Applicant: BASF SE

Inventor： HAASS, Frank ,  STEFAN, Madalina Andreea ,  DEGEN, Georg

IPC: H01L35/08 ,  H01L35/34

CPC classification number: H01L35/08 ,  H01L35/34

公开(公告)号：EP2401789B1

公开(公告)日：2014-04-09

申请号：EP10704937.1

申请日：2010-02-22

Applicant: BASF SE

Inventor： HAASS, Frank

IPC: H01R13/03 ,  H01R43/16 ,  H01R13/24

CPC classification number: H01R13/2407 ,  H01R13/03 ,  H01R43/16 ,  Y10T29/49204 ,  Y10T442/655

公开(公告)号：EP2460194A1

公开(公告)日：2012-06-06

申请号：EP10736704.7

申请日：2010-07-23

Applicant: BASF SE

Inventor： HAASS, Frank ,  STEFAN, Madalina Andreea ,  DEGEN, Georg

IPC: H01L35/08 ,  H01L35/34

CPC classification number: H01L35/08 ,  H01L35/34

Abstract: A method for depositing at least one layer selected from diffusion barriers, further protective barriers, adhesion promoters, solders and electric contacts onto thermoelectric materials is characterised in that the at least one layer is rolled or pressed onto the thermoelectric material at a temperature at which the thermoelectric material is flowable.

公开(公告)号：EP2459762A2

公开(公告)日：2012-06-06

申请号：EP10742116.6

申请日：2010-07-23

Applicant: BASF SE

Inventor： STEFAN, Madalina, Andreea ,  HAASS, Frank

IPC: C22C1/04

CPC classification number: H01L35/34 ,  B22F2998/00 ,  B22F2999/00 ,  C04B35/547 ,  C04B35/64 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3296 ,  C04B2235/404 ,  C04B2235/6021 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6582 ,  C04B2235/6588 ,  C04B2235/666 ,  C22C1/0483 ,  C22C1/0491 ,  H01L35/14 ,  B22F3/14 ,  B22F3/15 ,  B22F3/105 ,  B22F3/20 ,  B22F2201/013 ,  B22F2201/04 ,  B22F2201/10

Abstract: The method for producing, processing, sintering, pressing or extruding thermoelectric materials under heat treatment using an inert gas, or at a reduced pressure at temperatures ranging from 100 to 900 °C is characterised in that the producing, processing, sintering, pressing or extruding is carried out in the presence of oxygen scavengers which form thermodynamically stable oxides under the producing, processing, sintering, pressing or extrusion conditions in the presence of free oxygen and thus keep free oxygen away from the thermoelectric material.

公开(公告)号：EP2227834A2

公开(公告)日：2010-09-15

申请号：EP08867452.8

申请日：2008-12-19

Applicant: BASF SE

Inventor： KUEHLING, Klaus ,  STERZEL, Hans-Josef ,  HAASS, Frank

IPC: H01L35/16 ,  H01L35/34 ,  B21C23/00

CPC classification number: B21C23/002 ,  H01L35/16 ,  H01L35/34

Abstract: With respect to a method for reducing the thermal conductivity and for increasing the thermoelectric efficiency of thermoelectric materials based on lead chalcogenides or skutterudites, the thermoelectrical materials are extruded at a temperature below their melting point and a pressure in the range of 300 to 1000 MPa.