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    AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS
    6.
    发明公开
    AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS 有权
    含水抛光组合物和方法与结构化或非结构化介电Low-k膜的化学机械抛光SUBSTRATES

    公开(公告)号：EP2625236A1

    公开(公告)日：2013-08-14

    申请号：EP11830272.8

    申请日：2011-10-04

    申请人： BASF SE

    发明人： RAMAN, Vijay, Immanuel ,  RITTIG, Frank ,  LI, Yuzhuo ,  CHIU, Wei Lan William

    IPC分类号： C09G1/02 ,  H01L21/306

    CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  G09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.