公开(公告)号：EP3227913A4

公开(公告)日：2018-07-25

申请号：EP15849828

申请日：2015-08-14

申请人： BOE TECHNOLOGY GROUP CO LTD ,  CHONGQING BOE OPTOELECTRONICS CO LTD

发明人： WANG WU ,  QIU HAIJUN ,  SHANG FEI ,  WANG GUOLEI

IPC分类号： H01L29/417 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L27/1288 ,  H01L21/0274 ,  H01L21/441 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78615 ,  H01L29/78618 ,  H01L29/7869

摘要： Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An etch stop layer (ESL) material is formed on an active layer on a substrate. An electrical conductive layer material is formed on the ESL material for forming a source electrode and a drain electrode. The electrical conductive layer material is patterned to form a first portion of the source electrode containing a first via-hole through the source electrode, and to form a first portion of the drain electrode containing a second via-hole through the drain electrode. The ESL material is patterned to form an etch stop layer (ESL) pattern including a first ESL via-hole connecting to the first via-hole through the source electrode and including a second ESL via-hole connecting to the second via-hole through the drain electrode.