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公开(公告)号：EP4163768A1
公开(公告)日：2023-04-12
申请号：EP20963039.1
申请日：2020-11-30
发明人： SU, Qiujie , LIAO, Yanping , MIAO, Yingmeng , ZHAO, Chongyang , HU, Bo , YIN, Xiaofeng
IPC分类号： G06F3/041 , G06F3/044 , G02F1/1362
摘要： An array substrate and a touch display device are provided. In the array substrate, a first control unit and a second control unit are arranged opposite to each other in a first direction. A plurality of touch sensor blocks includes a first group of electrode blocks and a second group of electrode blocks arranged in the first direction, and a plurality of touch signal lines includes a first group of touch signal lines and a second group of touch signal lines arranged in the first direction. The touch signal lines in the first group of touch signal lines are coupled to the touch sensor blocks in the first group of electrode blocks respectively, and one end of each of the touch signal lines in the first group of touch signal lines is coupled to the first control unit; and the touch signal lines in the second group of touch signal lines are coupled to the touch sensor blocks in the second group of electrode blocks respectively, and one end of each of the touch signal lines in the second group of touch signal lines is coupled to the second control unit.
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2.发明公开
公开(公告)号：EP4345910A1
公开(公告)日：2024-04-03
申请号：EP21955429.2
申请日：2021-08-31
发明人： LIN, Bin , LI, Liangliang , LIU, Zheng , HU, Bo , ZHANG, Rui , PENG, Xinlin
IPC分类号： H01L29/786 , H01L29/417
摘要： The present disclosure relates to a metal oxide thin-film transistor and a manufacturing method therefor, a display panel and a display apparatus, which belong to the technical field of displays. The metal oxide thin-film transistor comprises a gate electrode, a gate insulating layer, a metal oxide semiconductor layer, a source electrode and a drain electrode, and a passivation layer, which are sequentially arranged on a base substrate, wherein the source electrode and the drain electrode each have a stacked structure, the stacked structure of the source electrode or the drain electrode at least comprises a main body metal layer and an electrode protection layer, and the electrode protection layer contains metal or metal alloy; the electrode protection layer is at least arranged between the metal oxide semiconductor layer and the main body metal layer; a metal oxide layer is provided between the electrode protection layer and the main body metal layer, and a metal element of the metal oxide layer comprises at least one of a metal element of the main body metal layer and a metal element of the electrode protection layer; the thickness of the metal oxide layer does not exceed 2% of the thickness of either one of the source electrode and the drain electrode; and the thickness of the metal oxide layer does not exceed 10% of the thickness of the electrode protection layer.
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公开(公告)号：EP3671765A1
公开(公告)日：2020-06-24
申请号：EP18782291.1
申请日：2018-03-15
发明人： HU, Bo , WANG, Wenchao , WANG, Baoqiang , PARK, Sang Jin
IPC分类号： H01B5/14
摘要： A method of preparing a graphene circuit pattern, a substrate and an electronic product are disclosed. The method of preparing a graphene circuit pattern includes: immersing a metal circuit pattern (101, 201) in a graphene oxide solution (1020, 2020) to cause a redox reaction between the metal circuit pattern (101, 201) and graphite oxide, thereby forming the graphene circuit pattern (102, 202). The graphene circuit pattern may be directly formed at a location of the metal circuit pattern, and is simple in production process, low in cost, and suitable for mass production.
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