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公开(公告)号：EP0942593B1
公开(公告)日：2008-01-16
申请号：EP99301832.4
申请日：1999-03-11
发明人： Kochi, Tetsunobu , Ueno, Isamu , Sakurai, Katsuhito , Sugawa, Shigetoshi , Koizumi, Toru , Hiyama, Hiroki
IPC分类号： H04N3/15
CPC分类号： H04N5/374
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公开(公告)号：EP0905788B1
公开(公告)日：2006-12-13
申请号：EP98307838.7
申请日：1998-09-28
发明人： Kochi, Tetsunobu , Ueno, Isamu , Koizumi, Toru , Hiyama, Hiroki , Sugawa, Shigetoshi , Ogawa, Katsuhisa , Sakurai, Katsuhito
IPC分类号： H01L27/146 , H04N3/15
CPC分类号： H04N5/37452 , H01L27/14609 , H01L27/14643 , H04N5/3559 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3741
摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element (901), a first switch (911) for transferring charge generated by the photoelectric conversion element, a field effect transistor (903), having a gate area for receiving the transferred charge, for outputting a signal corresponding to the charge stored in the gate area, and a second switch (902) for resetting the gate area of the field effect transistor, it is determined that the threshold voltages of the first switch and the second are different from the threshold voltage of the field effect transistor.
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公开(公告)号：EP0969674A3
公开(公告)日：2004-01-02
申请号：EP99305128.3
申请日：1999-06-29
发明人： Sakurai, Katsuhito , Sugawa, Shigetoshi , Ueno, Isamu , Ogawa, Katsuhisa , Koizumi, Toru , Kochi, Tetsunobu
摘要： Control to read signals from a sensor unit having a plurality of pixels by pixel blocks of a predetermined size, and the read signals are processed into pseudo luminance and color signals by pixel blocks of the predetermined size.
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4.发明公开Exposure method and device manufacturing method using the same 审中-公开Expositionsmethode und Verfahren zur Herstellung von Bauelementen，die sie benutzt
公开(公告)号：EP0986094A3
公开(公告)日：2002-06-12
申请号：EP99307119.0
申请日：1999-09-08
发明人： Kochi, Tetsunobu , Saitoh, Kenji
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/2022 , G03F7/70466
摘要： An exposure method and a device to be produced thereby are disclosed, wherein the method includes printing, by an exposure, a fine pattern onto a substrate, and printing, by an exposure, a mask pattern having a smallest linewidth larger than that of the fine pattern, onto the substrate, wherein the fine pattern and the mask pattern are printed on the substrate superposedly, and wherein a fine pattern exposure region in which the fine pattern is to be printed has a size that includes a chip-inside-device forming region in which a chip-inside-device is to be formed in a single chip region to be formed on the substrate.
摘要翻译： 公开了一种曝光方法和由此制造的装置，其中，该方法包括通过曝光将精细图案印刷到基板上，并且通过曝光打印具有比精细线宽大的线宽的掩模图案 图案，其中精细图案和掩模图案被重叠地印刷在基板上，并且其中精细图案要被印刷的精细图案曝光区域具有包括芯片内部装置形成区域的尺寸 其中芯片内部器件将形成在要形成在衬底上的单个芯片区域中。
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公开(公告)号：EP1173007A2
公开(公告)日：2002-01-16
申请号：EP01305886.2
申请日：2001-07-09
CPC分类号： H01L27/14609 , H01L27/14658 , H04N5/2253 , H04N5/2254 , H04N5/2259 , H04N5/32
摘要： This invention provides a large image pickup apparatus for, e.g., X-rays that can provide a seamless image by using a plurality of single-crystal silicon image pickup elements. More specifically, the image pickup apparatus includes an image pickup region where a plurality of pixels which include photoelectric conversion units are arranged to pick up an object image by dividing the object image into a plurality of regions, and a scan circuit (501, 507) arranged between the plurality of photoelectric conversion units in the region to commonly process the plurality of pixels and/or signals from the plurality of pixels.
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公开(公告)号：EP0689086B1
公开(公告)日：2001-08-22
申请号：EP95304241.3
申请日：1995-06-19
CPC分类号： G09G3/3688 , G02F1/13454 , G02F2001/136281 , G09G3/2011 , G09G3/3648 , G09G2310/0248 , G09G2310/0297 , H01L27/1203 , H01L27/13
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公开(公告)号：EP0905788A3
公开(公告)日：2000-06-28
申请号：EP98307838.7
申请日：1998-09-28
发明人： Kochi, Tetsunobu , Ueno, Isamu , Koizumi, Toru , Hiyama, Hiroki , Sugawa, Shigetoshi , Ogawa, Katsuhisa , Sakurai, Katsuhito
IPC分类号： H01L27/146 , H04N3/15
CPC分类号： H04N5/37452 , H01L27/14609 , H01L27/14643 , H04N5/3559 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3741
摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element (1), a field effect transistor (102) having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line (4, 5) for supplying electric power to the field effect transistor, and a first switch (103) connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is V sig0 , a threshold voltage of the field effect transistor is V th , current flowing through the field effect transistor is I a , a voltage applied via the first power supply line is V c1 , and a series resistance of the first switch is R on , each pixel cell is configured to satisfy a condition determined byVc1 - Ron × Ia > Vsig0 - Vth.
摘要翻译： 在具有多个像素单元的光电转换装置中，每个像素单元包括光电转换元件（901），用于传送由光电转换元件产生的电荷的第一开关（911），具有栅极的场效应晶体管（903） 用于接收转移电荷的区域，用于输出对应于存储在栅极区域中的电荷的信号;以及第二开关（902），用于复位场效应晶体管的栅极区域，确定第一开关的阈值电压 第二个不同于场效应晶体管的阈值电压。
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公开(公告)号：EP0948056A3
公开(公告)日：2000-02-23
申请号：EP99302095.7
申请日：1999-03-18
发明人： Koizumi, Toru , Ueno, Isamu , Sakurai, Katsuhito , Sugawa, Shigetoshi , Kochi, Tetsunobu , Hiyama, Hiroki
IPC分类号： H01L27/146
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： In a solid state image pickup device, in order to form a bypass region with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit composed of a first region of a first conductive type (102) formed on a semiconductor substrate and having a principal surface, a second region of a second conductive type (104) formed in the first region, and a third region of the first conductive type (105) present between the second region and the principal surface, a fourth region (107) of the second conductive type formed in the first region, and a charge transfer unit including the first region (102), an insulation layer on the first region and a control electrode (103) provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit, to the fourth region (107), wherein the photoelectric conversion unit and the charge transfer unit are connected through a fifth region (106) of the second conductive type.
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公开(公告)号：EP0952730A2
公开(公告)日：1999-10-27
申请号：EP99303078.2
申请日：1999-04-21
发明人： Hiyama, Hiroki , Sugawa, Shigetoshi , Ueno, Isamu , Koizumi, Toru , Kochi, Tetsunobu , Sakurai, Katsuhito
IPC分类号： H04N3/15
CPC分类号： H04N5/3745 , H04N5/3658 , H04N5/378
摘要： In a solid-state image sensing apparatus, each pixel includes a photodiode, a MOS amplifier whose gate receives photo-charge generated by the photodiode, and a MOS switch for controlling connection between the photodiode and the gate of the MOS amplifier, and transference of the photo-charge from the photodiode to the gate of the MOS amplifier is performed under a condition that a channel is formed under the gate of the MOS amplifier.
摘要翻译： 在固态图像传感装置中，每个像素包括光电二极管，其栅极接收由光电二极管产生的光电荷的MOS放大器以及用于控制光电二极管与MOS放大器的栅极之间的连接的MOS开关， 在MOS放大器的栅极下方形成沟道的条件下，执行从光电二极管到MOS放大器的栅极的光电荷。
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公开(公告)号：EP0933950A2
公开(公告)日：1999-08-04
申请号：EP99300555.2
申请日：1999-01-26
发明人： Ueno, Isamu , Sugawa, Shigetoshi , Ogawa, Katsuhisa , Koizumi, Toru , Kochi, Tetsunobu , Sakurai, Katsuhito , Hiyama, Hiroki
IPC分类号： H04N9/04
CPC分类号： H04N9/045
摘要： An image pickup apparatus having a plurality of pixels; and a color filter array of four colors disposed on the plurality of pixels, wherein the color filter array has a periodicity of two rows × two columns, and colors of four color filters in a periodical unit of two rows × two columns are all different.
摘要翻译： 一种具有多个像素的图像拾取装置; 以及布置在所述多个像素上的四种颜色的滤色器阵列，其中所述滤色器阵列具有两行×两列的周期性，并且两行×两列的周期性单位中的四个滤色器的颜色都是不同的。
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