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1.发明公开
公开(公告)号：EP0887709A2
公开(公告)日：1998-12-30
申请号：EP98305051.9
申请日：1998-06-26
发明人： Ogusu, Makoto , Saitoh, Kenji
IPC分类号： G03F7/20
CPC分类号： G03F7/70425 , G03F7/70433 , G03F9/70
摘要： A method of manufacturing an element with a concentric pattern by use of a photolithographic process is disclosed, wherein the method includes preparing masks having segment patterns corresponding to fan-shaped regions, respectively, of the pattern which fan-shaped regions can be defined by dividing the pattern by at least one circle concentric with the pattern to provide plural zones and then by dividing each zone equiangularly, and exposing regions of a substrate corresponding to the plural zones, respectively, by using the masks corresponding to the zones, respectively, while rotating the substrate by regular angles.
摘要翻译： 制造通过使用光刻工艺的同心图案元件的制造方法是盘游离缺失，worin该方法包括具有节段模式分别对应于扇形区域，该图案的哪个扇形区可以通过将被限定制备掩模 该图案由至少一个圆同心图案通过划分每个区域等角，并分别暴露对应于所述多个区域中，基板的区域中，通过使用掩模分别对应于区，以提供多个区域，然后，在旋转的同时 基板通过定期角度。
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2.发明授权
公开(公告)号：EP0439322B1
公开(公告)日：1996-11-27
申请号：EP91300463.6
申请日：1991-01-22
发明人： Matsusgu, Masakazu , Saitoh, Kenji
CPC分类号： G03F9/7076 , G03F9/7023
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公开(公告)号：EP0332300B1
公开(公告)日：1995-06-14
申请号：EP89301473.8
申请日：1989-02-16
发明人： Ohwada, Mitsutoshi , Matsugu, Masakazu , Suda, Shigeyuki , Yoshii, Minoru , Niwa, Yukichi , Nose, Noriyuki , Saitoh, Kenji , Hasegawa, Masanobu
CPC分类号： G03F9/7023 , G03F9/7049
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4.发明公开Alignment apparatus and SOR X-ray exposure apparatus having same 失效Ausrichtevorrichtung und eine damit versehene Synchrotron-Röntgenbelichtungsvorrichtung。
公开(公告)号：EP0425739A1
公开(公告)日：1991-05-08
申请号：EP89311195.5
申请日：1989-10-30
发明人： Uzawa, Shunichi , Kariya, Takao , Higomura, Makoto , Mizusawa, Nobutoshi , Ebinuma, Ryuichi , Uda, Koji , Ozawa, Kunitaka , Amemiya, Mitsuaki , Sakamoto, Eiji , Abe, Naoto , Saitoh, Kenji
IPC分类号： G03F7/20
CPC分类号： G03F9/7088 , G03F7/70008 , G03F7/702 , G03F7/70691 , G03F7/70841 , G03F7/70866 , G03F9/7049
摘要： A semiconductor device manufacturing SOR X-ray exposure apparatus wherein, after a mask (2) and a semiconductor wafer (3) are aligned, SOR X-ray are used to transfer a semiconductor device pattern on the mask onto a resist on the semiconductor wafer. The apparatus includes a mirror unit (101) and an exposure unit (102) for exposing the wafer through the mask to the X-rays from the mirror unit. The mirror unit includes an X-ray mirror (1401) for diverging the X-rays in a desired direction, a first chamber for providing a desired vacuum ambience around the X-ray mirror and a first supporting means for supporting the X-ray mirror. The exposure unit includes a shutter for controlling the exposure, a mask stage for holding the mask, a wafer stage for holding the wafer, a second chamber (3101) for providing a desired He ambience around the mask stage and the wafer stage, a frame structure for mounting the mask stage and the wafer stage and a second supporting means for supporting the frame structure. By this, 64 MB or more highly integrated semiconductor device can be produced.
摘要翻译： 一种制造SOR X射线曝光装置的半导体器件，其中在掩模（2）和半导体晶片（3）对准之后，使用SOR X射线将掩模上的半导体器件图案转移到半导体晶片上的抗蚀剂上 。 该装置包括用于将晶片通过掩模暴露于来自反射镜单元的X射线的反射镜单元（101）和曝光单元（102）。 反射镜单元包括用于沿期望方向分散X射线的X射线反射镜（1401），用于在X射线反射镜周围提供期望的真空环境的第一腔室和用于支撑X射线镜的第一支撑装置 。 曝光单元包括用于控制曝光的快门，用于保持掩模的掩模台，用于保持晶片的晶片台，用于在掩模台和晶片台周围提供期望的He环境的第二室（3101），框架 用于安装掩模台和晶片台的结构以及用于支撑框架结构的第二支撑装置。 由此，可以制造64MB以上的高度集成的半导体器件。
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公开(公告)号：EP1357426A3
公开(公告)日：2005-11-23
申请号：EP02256555.0
申请日：2002-09-20
发明人： Yamazoe, Kenji , Saitoh, Kenji , Suzuki, Akiyoshi
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system includes the steps of forming data for the predetermined pattern, forming data for the auxiliary pattern, and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.
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6.发明公开Mask and its manufacturing method, exposure, and device fabrication method 有权国际卫生条例HERSTELLUNGS- UND BELICHTUNGSVERFAHREN，HERSTELLUNGSPROZESSFÜRHALBLEITERBAUTEILE
公开(公告)号：EP1450206A2
公开(公告)日：2004-08-25
申请号：EP04003772.3
申请日：2004-02-19
发明人： Yamazoe, Kenji , Saitoh, Kenji , Suzuki, Akiyoshi
IPC分类号： G03F1/02
CPC分类号： G03F7/70433 , G03F1/36
摘要： A mask arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern so that where a virtual lattice is assumed which has a lattice point located at a center of the predetermined pattern, a center of the auxiliary pattern is offset from the lattice point of the virtual lattice.
摘要翻译： 掩模布置预定图案和小于预定图案的辅助图案，使得假定具有位于预定图案的中心的格子点的虚拟网格，辅助图案的中心偏离 虚拟格子。
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公开(公告)号：EP0304893A3
公开(公告)日：1993-04-07
申请号：EP88113794.7
申请日：1988-08-24
发明人： Yanagisawa, Yoshihiro , Morikawa, Yuko , Matsuda, Hiroshi , Kawada, Haruki , Sakai, Kunihiro , Kawade, Hisaaki , Eguchi, Ken , Kawakami, Eigo , Kawase, Toshimitsu , Yoshii, Minoru , Saitoh, Kenji , Yamano, Akihiko , Nose, Hiroyasu
CPC分类号： G01D5/244 , B82Y10/00 , G01B7/003 , G01D5/2451 , G01Q10/06 , G01Q60/16 , G01Q80/00 , G11B9/1418 , G11B9/1427 , G11B9/1472 , G11B9/1481 , Y10S977/851 , Y10S977/861 , Y10S977/947
摘要： An encoder includes an electrically conductive reference scale having surface steps formed at predetermined positions; an electrically conductive probe having a tip disposed opposed to the reference scale; wherein the reference scale and the probe are relatively movable in a direction different from the opposing direction of the tip of the probe and the reference scale; a portion for applying an electric voltage to between the reference scale and the probe; a portion for detecting a change in a tunnel current between the reference scale and the probe, to between which the electric voltage is applied by the voltage applying portion at the time of the relative movement between the scale and the probe, the detecting portion detecting the change in the tunnel current when the probe passes a position opposed to a surface step of the reference scale; and portion for detecting the amount of the relative movement between the scale and probe, on the basis of the detection by the change detecting portion.
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公开(公告)号：EP0439322A3
公开(公告)日：1992-04-01
申请号：EP91300463.6
申请日：1991-01-22
发明人： Matsusgu, Masakazu , Saitoh, Kenji
CPC分类号： G03F9/7076 , G03F9/7023
摘要： A device for detecting relative positional deviation between a mask (2) and a wafer (3) is disclosed, wherein the mask has a first grating pattern and a zone plate pattern and the wafer has a second grating pattern. The device includes a directing system for directing a radiation beam to the first grating pattern of the mask, such that the first grating pattern produces a first transmitted beam which is then inputted to the wafer substantially perpendicularly and a second transmitted beam which is obliquely inputted to the wafer and such that the first grating pattern also produces a first reflected beam; and a detecting system (10) for detecting (i) the first reflected beam and also for detecting (ii) a second reflected beam resulting from reflective diffraction of the first transmitted beam by the second diffraction pattern of the wafer and being displaceable with any inclination of a surface of the wafer and (iii) a third reflected beam resulting from reflection of the second transmitted beam by the wafer surface and from diffraction of the same by the zone plate pattern of the mask and being displaceable with any inclination of the wafer surface and an interval between the mask and the wafer.
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9.发明公开
公开(公告)号：EP0411966A2
公开(公告)日：1991-02-06
申请号：EP90308601.5
申请日：1990-08-03
CPC分类号： G03F9/7076
摘要： A position detecting method for detecting the position of a substrate by use of a grating pattern provided on the substrate includes irradiating the grating pattern with first and second radiation beams having different wavelengths to produce first and second diffraction beams of different wavelengths; and receiving the first and second diffraction beams by use of a sensor to determine the position of the substrate on the basis of the position of incidence of each of the first and second diffraction beams on the sensor.
摘要翻译： 通过使用设置在基板上的光栅图案来检测基板的位置的位置检测方法包括用具有不同波长的第一和第二辐射束照射光栅图案以产生不同波长的第一和第二衍射光束; 以及通过使用传感器接收第一和第二衍射光束，以基于传感器上的第一和第二衍射光束的入射位置来确定衬底的位置。
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公开(公告)号：EP0358425A3
公开(公告)日：1990-12-27
申请号：EP89308921.9
申请日：1989-09-04
IPC分类号： G03F9/00
CPC分类号： G03F9/7049
摘要： A device for detecting a positional relationship between a mask (1) and a wafer (2), includes a light source for projecting light toward the mask, a first photodetecting system (11) for detecting the position, on a predetermined plane, of first light deflected by the mask and the wafer, wherein the position of incidence on the first photodetecting system of the first light is changeable with the positional relationship between the mask and the wafer, a second photodetecting system (12) for detecting the position, on a predetermined plane, of incidence of second light deflected by the mask, wherein the position of incidence on the second photodetecting system (12), of the second light being changeable with relative inclination between the mask and the light source, and a position detecting system for detecting the relative position of the mask and the wafer on the basis of the detection by the first (11) and second (12) photodetecting systems, wherein the detection by the position detecting system can be free from the relative inclination between the mask and the light source.
摘要翻译： 一种用于检测掩模（1）和晶片（2）之间的位置关系的装置，包括：光源，用于朝向掩模投射光;第一光电检测系统（11），用于在预定平面上检测第一 由掩膜和晶片偏转的光，其中第一光的第一光检测系统的入射位置随着掩模和晶片之间的位置关系而变化，第二光检测系统（12）用于检测位置， 其中入射到第二光检测系统（12）上的第二光的入射位置随着掩模和光源之间的相对倾斜而改变，以及位置检测系统 基于第一（11）和第二（12）光检测系统的检测来检测掩模和晶片的相对位置，其中通过位置检测 系统可以避免面罩和光源之间的相对倾斜。
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