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    Method of connecting a wiring with a semiconductor region and semiconductor device obtained by this method
    7.
    发明公开
    Method of connecting a wiring with a semiconductor region and semiconductor device obtained by this method 失效
    将布线与半导体区域连接的方法和通过该方法获得的半导体器件。

    公开(公告)号：EP0622832A3

    公开(公告)日：1995-09-27

    申请号：EP94104127.9

    申请日：1994-03-16

    申请人： CANON KABUSHIKI KAISHA

    发明人： Gofuku, Ihachiro, c/o Canon Kabushiki Kaisha

    IPC分类号： H01L21/285 ,  H01L21/3215

    CPC分类号： H01L29/66954 ,  H01L21/28525 ,  H01L21/31155 ,  H01L29/66272

    摘要： A method for fabricating a semiconductor device having a wiring part (113) connected via an opening portion formed in an insulating film (100,112) on a semiconductor region to the semiconductor region (109), includes the steps of depositing a polycrystalline semiconductor layer (111) over the opening portion on the semiconductor region (109), ion injecting impurities having large range on the polycrystalline semiconductor layer (111), ion injecting impurities having small range on the polycrystalline semiconductor layer (111), conducting heat treatment after the ion injection of the impurities, and depositing a metal or metal silicide containing a low-melting metal on the polycrystalline semiconductor layer (111) after the heat treatment.

    摘要翻译： 为了通过防止布线金属扩散到半导体器件的元件区域中而提供半导体器件而不劣化其特性，同时通过将布线金属直接放置在元件区域的上方来简化工艺，以消除引线 不必要的布线，制造这种半导体器件的方法，该半导体器件具有通过形成在半导体区域上的绝缘膜中的开口部连接到半导体区域的布线部分，包括以下步骤：在半导体上的开口部分上沉积多晶半导体层111 区域109，多晶半导体层111上具有大范围的离子注入杂质，在多晶半导体层111上具有小范围的离子注入杂质，离子注入杂质后进行热处理，以及沉积含有低浓度的金属或金属硅化物 在多克隆上熔化金属 半导体半导体层经过热处理。

    Photoelectric conversion device and method of driving the same
    8.
    发明公开
    Photoelectric conversion device and method of driving the same 失效
    光电转换装置及其驱动方法

    公开(公告)号：EP0543391A3

    公开(公告)日：1994-04-27

    申请号：EP92119795.0

    申请日：1992-11-20

    申请人： CANON KABUSHIKI KAISHA

    发明人： Gofuku, Ihachiro, c/o Canon Kabushiki Kaisha

    IPC分类号： H01L31/107 ,  H01L27/146

    CPC分类号： H01L31/0352 ,  H01L27/1465 ,  H01L31/1075

    摘要： A photoelectric conversion device including: a photoelectric conversion portion having a light absorbing layer (613) disposed between charge injection inhibition layers (611,614) and having a predetermined forbidden band width Eg₁, and a carrier multiplication portion (612) including a single or a plurality of inclined band gap layers, the inclined band gap layer including a minimum forbidden band width Eg₂ and a maximum forbidden band width Eg₃ which are disposed to be in contact with each other to form a hetero junction and having, at the two ends thereof, forbidden band widths Eg₄ which holds a relationship Eg₂

    摘要翻译： 一种光电转换装置，包括：光电转换部分，具有设置在电荷注入阻挡层（611,614）之间并具有预定禁带宽度Eg 1的光吸收层（613），以及载波倍增部分（612），其包括单个或多个 所述倾斜带隙层包括最小禁带宽度Eg 2和最大禁带宽度Eg 3，它们被设置为彼此接触以形成异质结并且在其两端具有禁止的带宽 以禁止带宽从两个禁带宽度Eg 2和Eg 3连续变化到禁带宽度Eg 4的方式保持关系Eg 2