摘要:
Provided is an image display apparatus including: a vacuum container having an electron source enclosed therein for displaying an image; an ion pump communicating with the vacuum container for discharging air therefrom and decreasing pressure therein; and a resistor connected in series with the ion pump with respect to a power supply for driving the ion pump. Even if internal resistance of the ion pump undergoes order-of-magnitude changes according to its operating state, current consumption can be suppressed and the ion pump can be driven efficiently.
摘要:
Provided is an image display apparatus including: a vacuum container having an electron source enclosed therein for displaying an image; an ion pump communicating with the vacuum container for discharging air therefrom and decreasing pressure therein; and a resistor connected in series with the ion pump with respect to a power supply for driving the ion pump. Even if internal resistance of the ion pump undergoes order-of-magnitude changes according to its operating state, current consumption can be suppressed and the ion pump can be driven efficiently.
摘要:
A photoelectric converting device has non-monorrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.
摘要:
A method for fabricating a semiconductor device having a wiring part (113) connected via an opening portion formed in an insulating film (100,112) on a semiconductor region to the semiconductor region (109), includes the steps of depositing a polycrystalline semiconductor layer (111) over the opening portion on the semiconductor region (109), ion injecting impurities having large range on the polycrystalline semiconductor layer (111), ion injecting impurities having small range on the polycrystalline semiconductor layer (111), conducting heat treatment after the ion injection of the impurities, and depositing a metal or metal silicide containing a low-melting metal on the polycrystalline semiconductor layer (111) after the heat treatment.
摘要:
A photoelectric conversion device including: a photoelectric conversion portion having a light absorbing layer (613) disposed between charge injection inhibition layers (611,614) and having a predetermined forbidden band width Eg₁, and a carrier multiplication portion (612) including a single or a plurality of inclined band gap layers, the inclined band gap layer including a minimum forbidden band width Eg₂ and a maximum forbidden band width Eg₃ which are disposed to be in contact with each other to form a hetero junction and having, at the two ends thereof, forbidden band widths Eg₄ which holds a relationship Eg₂
摘要:
A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous P- or N-semiconductor layer in contact with the I-type layer and an amorphous P- or N-semiconductor layer containing microcrystalline structure.
摘要:
A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous P- or N-semiconductor layer in contact with the I-type layer and an amorphous P- or N-semiconductor layer containing microcrystalline structure.