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公开(公告)号：EP0659298A1
公开(公告)日：1995-06-28
申请号：EP93921460.0
申请日：1993-09-10
CPC分类号： H01L29/1608 , H01L21/0485 , H01L29/45 , Y10S148/148
摘要： A method and resulting ohmic contact structure between a high work function metal such as platinum, and a wide bandgap semiconductor such as silicon carbide, for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.
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公开(公告)号：EP0659298B1
公开(公告)日：1999-03-17
申请号：EP93921460.7
申请日：1993-09-10
CPC分类号： H01L29/1608 , H01L21/0485 , H01L29/45 , Y10S148/148
摘要： A method and resulting ohmic contact structure between a high work function metal such as platinum, and a wide bandgap semiconductor such as silicon carbide, for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.
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