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1.发明授权OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME 有权与绝缘层与显示装置OXIDHALBLEITERVORRICHTUNG使用相同的IN
公开(公告)号：EP2195849B1
公开(公告)日：2011-03-23
申请号：EP08857495.9
申请日：2008-11-27
发明人： SATO, Ayumu , HAYASHI, Ryo , YABUTA, Hisato , WATANABE, Tomohiro
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
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2.发明公开GLASS COMPOSITION FOR ULTRAVIOLET LIGHT AND OPTICAL DEVICE USING THE SAME 审中-公开用于紫外线灯的玻璃组合物和使用该组合物的光学装置
公开(公告)号：EP2084113A1
公开(公告)日：2009-08-05
申请号：EP07832711.1
申请日：2007-11-20
CPC分类号： C03C3/125 , C03C4/0085 , G02B1/00
摘要： A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Al, and 0 in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 24 % or more and 33 % or less in cation percent and Al in an amount of 67 % or more and 76 % or less in cation percent.
摘要翻译： 提供一种紫外线用玻璃组合物。 紫外线用玻璃组合物总共含有99.99重量％以上的Lu，Al和0。 该玻璃组合物中，Lu的阳离子百分率为24％以上且33％以下，Al的阳离子百分率为67％以上且76％以下。
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3.发明公开
公开(公告)号：EP2099720A1
公开(公告)日：2009-09-16
申请号：EP08847126.3
申请日：2008-11-05
CPC分类号： G02B1/00 , C03C3/062 , C03C3/095 , C03C4/0085
摘要： A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Si, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 26 % or more and 39 % or less in cation percent and Si in an amount of 61 % or more and 74 % or less in cation percent.
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4.发明公开OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME 有权与绝缘层与显示装置OXIDHALBLEITERVORRICHTUNG使用相同的IN
公开(公告)号：EP2195849A1
公开(公告)日：2010-06-16
申请号：EP08857495.9
申请日：2008-11-27
发明人： SATO, Ayumu , HAYASHI, Ryo , YABUTA, Hisato , WATANABE, Tomohiro
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4 x 1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4 x 1021 atoms/cm3.
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