公开(公告)号：EP4369385A1

公开(公告)日：2024-05-15

申请号：EP23197843.8

申请日：2023-09-18

申请人： GlobalFoundries U.S. Inc.

发明人： JAIN, Vibhor ,  KENNEY, Crystal R. ,  PEKARIK, John J.

IPC分类号： H01L21/761 ,  H01L21/74 ,  H01L21/762 ,  H01L27/02 ,  H01L21/82 ,  H01L29/10 ,  H01L29/73 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L21/761 ,  H01L21/74 ,  H01L21/7624 ,  H01L27/0248 ,  H01L29/1083 ,  H01L29/73 ,  H01L29/78606 ,  H01L27/0623 ,  H01L27/1207

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a substrate with trap rich and low resistivity regions and methods of manufacture. The structure includes: a high resistivity semiconductor substrate; an active device over the high resistivity semiconductor substrate; and a low resistivity region floating in the high resistivity semiconductor substrate and which is below the active device.

公开(公告)号：EP2822026B1

公开(公告)日：2018-03-14

申请号：EP13754726.1

申请日：2013-02-28

申请人： Kyocera Corporation

发明人： KITADA, Masanobu

IPC分类号： H01L21/20 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1203 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/2007 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78654

摘要： Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.

公开(公告)号：EP3188251A1

公开(公告)日：2017-07-05

申请号：EP16204960.5

申请日：2016-12-19

申请人： LG Display Co., Ltd.

发明人： KANG, Jiyeon ,  KIM, Changeun ,  BAEK, Jeongeun ,  KIM, Sungjin

IPC分类号： H01L29/786

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/283 ,  H01L27/3274 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0566

摘要： Carbon allotropes, a thin-film transistor array substrate comprising the same, and a display device comprising the same are disclosed. The thin-film transistor array substrate comprising a substrate, a gate electrode on the substrate, a gate insulating film on the gate electrode, an active layer positioned on the gate insulating film and comprising a semiconductor material and a plurality of carbon allotropes, and a source electrode and a drain electrode that make contact with the active layer.

摘要翻译： 公开了碳同素异形体，包含该碳同素异形体的薄膜晶体管阵列基板以及包括该碳同素异形体的显示装置。 所述薄膜晶体管阵列基板包括基板，所述基板上的栅极，所述栅极上的栅极绝缘膜，位于所述栅极绝缘膜上且包含半导体材料和多个碳同素异形体的有源层，以及 源电极和与有源层接触的漏电极。

公开(公告)号：EP3066692A4

公开(公告)日：2017-06-28

申请号：EP14859754

申请日：2014-11-05

申请人： CBRITE INC

发明人： SHIEH CHAN-LONG ,  YU GANG ,  FOONG FATT

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/027 ,  H01L21/70 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A method of fabricating MOTFTs includes positioning opaque gate metal on a transparent substrate, depositing gate dielectric material overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material thereon. Etch stop material is deposited on the semiconductor material. Photoresist defines an isolation area in the semiconductor material. Exposing the photoresist from the rear surface of the substrate and removing exposed portions to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material to form source and drain areas.

摘要翻译： 制造MOTFT的方法包括将不透明栅极金属设置在透明衬底上，沉积覆盖栅极金属和周围区域的栅极介电材料，并在其上沉积金属氧化物半导体材料。 蚀刻停止材料沉积在半导体材料上。 光致抗蚀剂定义了半导体材料中的隔离区。 从衬底的后表面暴露光致抗蚀剂并去除暴露部分，除了覆盖并与栅极金属对齐的部分之外，未暴露蚀刻停止材料。 蚀刻半导体材料的未覆盖部分以隔离TFT。 使用光致抗蚀剂，选择性地蚀刻蚀刻停止层以留下覆盖并与栅极金属对准的部分，并在半导体材料中限定沟道区域。 沉积并图案化导电材料以形成源极和漏极区域。

公开(公告)号：EP3097594A4

公开(公告)日：2017-06-07

申请号：EP14879712

申请日：2014-09-23

申请人： APPLE INC

发明人： CHOI JAE WON ,  GUILLOU JEAN-PIERRE ,  CHANG SHIH CHANG ,  TSAI TSUNG-TING ,  GUPTA VASUDHA ,  PARK YOUNG BAE

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/3272 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

摘要翻译： 显示器可以具有一组有机发光二极管显示像素。 每个显示像素可以具有在驱动晶体管的控制下发光的发光二极管。 每个显示像素还可以具有用于补偿和编程操作的控制晶体管。 显示像素的阵列可以具有行和列。 行线可用于将行控制信号施加到显示像素的行。 列线（数据线）可以用于将显示数据和其他信号应用于各列显示像素。 底部导电屏蔽结构可以形成在每个驱动晶体管的下方。 底部导电屏蔽结构可用于屏蔽驱动晶体管免受由相邻行和列线产生的任何电场的影响。 底部导电屏蔽结构可以是电浮动的或耦合到电源线。

公开(公告)号：EP3018704A4

公开(公告)日：2017-02-15

申请号：EP13861521

申请日：2013-12-03

申请人： BOE TECHNOLOGY GROUP CO LTD ,  HEFEI BOE OPTOELECTRONICS TECH

发明人： XU XIANGYANG ,  DU LEI ,  WANG SHENG

IPC分类号： H01L27/12 ,  G02F1/1368 ,  H01L29/786

CPC分类号： H01L29/78606 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L29/7869

摘要： An array substrate, a display device and a method of producing the array substrate are provided, and the array substrate comprises a substrate (101) and a thin film field effect transistor and a data line (107) formed on the substrate (101), and the thin film field effect transistor comprises a gate electrode (102), an active layer (105), a source electrode (1082) and a drain electrode (1081), a gate insulating layer (104) is formed between the gate electrode (102) and the active layer (105), and the array substrate comprises: a protection layer (112) formed between the gate insulating layer (104) and the data line (107) and being in direct contact with the data line (107); and the protection layer (112) is provided on the same layer with and has the same material with the active layer (105).

摘要翻译： 提供阵列基板，显示装置和阵列基板的制造方法，阵列基板包括基板（101）和薄膜场效应晶体管以及形成在基板（101）上的数据线（107） 所述薄膜场效应晶体管包括栅电极（102），有源层（105），源电极（1082）和漏电极（1081），在所述栅电极 102）和有源层（105），阵列基板包括：形成在栅极绝缘层（104）和数据线（107）之间并与数据线（107）直接接触的保护层（112） ; 并且所述保护层（112）设置在与所述有源层（105）相同的层上并具有相同的材料。

公开(公告)号：EP3097594A1

公开(公告)日：2016-11-30

申请号：EP14879712.9

申请日：2014-09-23

申请人： Apple Inc.

发明人： CHOI, Jae Won ,  GUILLOU, Jean-Pierre ,  CHANG, Shih Chang ,  TSAI, Tsung-Ting ,  GUPTA, Vasudha ,  PARK, Young Bae

IPC分类号： H01L51/52

CPC分类号： H01L27/3272 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

公开(公告)号：EP3038159A3

公开(公告)日：2016-10-05

申请号：EP15197918.4

申请日：2015-12-04

申请人： Samsung Display Co., Ltd.

发明人： Bang, Seok-Hwan ,  Kim, Hyung-Jun ,  Lim, Ji-Man

IPC分类号： H01L29/66 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02274 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606

摘要： A thin film transistor substrate includes a gate electrode disposed on a base substrate, an active pattern overlapping the gate electrode, a source metal pattern comprising both a source electrode disposed on the active pattern and a drain electrode spaced apart from the source electrode, a buffer layer disposed on the source metal pattern and contacting the active pattern, a first passivation layer disposed on the buffer layer and a second passivation layer disposed on the first passivation layer. The density of hydrogen in the buffer layer is greater than the density of hydrogen in the first passivation layer and less than the density of hydrogen in the second passivation layer.

摘要翻译： 薄膜晶体管基板包括设置在基底基板上的栅电极，与栅电极重叠的有源图案，包括设置在有源图案上的源电极和与源电极分隔开的漏电极的源金属图案，缓冲器 设置在源极金属图案上并与有源图案接触的第一钝化层，设置在缓冲层上的第一钝化层和设置在第一钝化层上的第二钝化层。 缓冲层中氢的密度大于第一钝化层中氢的密度并小于第二钝化层中氢的密度。

公开(公告)号：EP2916360A4

公开(公告)日：2016-06-22

申请号：EP13821779

申请日：2013-10-30

申请人： BOE TECHNOLOGY GROUP CO LTD

发明人： LIU XIANG ,  WANG GANG

IPC分类号： H01L29/86 ,  G09F9/33 ,  G09F9/35 ,  H01L21/28 ,  H01L21/336 ,  H01L27/12 ,  H01L29/06 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/4966 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： The present invention discloses a thin-film transistor (TFT), a manufacturing method thereof, an array substrate and a display device. The present invention is used for improving the electrical properties of the TFT and the image quality of the display device. The TFT provided by the present invention comprises: a gate electrode, a source electrode, a drain electrode, a semiconductor layer, a gate electrode insulating layer and a first metal barrier layer, which are disposed on a substrate; the gate electrode insulating layer is disposed between the gate electrode and the semiconductor layer; and the first metal barrier layer is disposed between the source/drain electrodes and the gate electrode insulating layer, and the first metal barrier layer is arranged on the same layer as the semiconductor layer and configured to prevent interdiffusion between the material for forming the source/drain electrodes and the material for forming the gate electrode.

公开(公告)号：EP2423954B1

公开(公告)日：2016-04-27

申请号：EP11178637.2

申请日：2011-08-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yamazaki, Shunpei

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L21/02565 ,  H01L21/02631 ,  H01L21/02694 ,  H01L29/26 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869

摘要： One object is to have stable electrical characteristics and high reliability and to manufacture a semiconductor device including a semi-conductive oxide film. Film formation is performed by a sputtering method using a target in which gallium oxide is added to a material that is easy to volatilize compared to gallium when the material is heated at 400 °C to 700 °C like zinc, and a formed film is heated at 400 °C to 700 °C, whereby the added material is segregated in the vicinity of a surface of the film and the oxide is crystallized. Further, a semi-conductive oxide film is deposited thereover, whereby a semi-conductive oxide having a crystal which succeeds a crystal structure of the oxide that is crystallized by heat treatment is formed.

摘要翻译： 一个目的是具有稳定的电特性和高可靠性，并且制造包括半导体氧化膜的半导体器件。 当将材料在如400℃至700℃像锌一样加热时，使用其中加入氧化镓的靶与溅射容易挥发的材料相比，通过溅射法进行成膜，并且将成膜加热 在400℃〜700℃下，由于添加的材料在膜的表面附近分离，氧化物结晶化。 此外，在其上沉积半导电氧化物膜，由此形成具有通过热处理结晶化的氧化物晶体结构成为结晶的半导体氧化物。