利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.013 秒)

    INVERTER MANUFACTURING METHOD AND INVERTER
    2.
    发明公开
    INVERTER MANUFACTURING METHOD AND INVERTER 有权
    一种用于转换器和逆变器的制备方法

    公开(公告)号：EP2162920A1

    公开(公告)日：2010-03-17

    申请号：EP08764479.5

    申请日：2008-05-15

    申请人： Canon Kabushiki Kaisha

    发明人： OFUJI, Masato ,  ABE, Katsumi ,  HAYASHI, Ryo ,  SANO, Masafumi ,  KUMOMI, Hideya

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1233

    摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

    METHOD OF TREATING SEMICONDUCTOR ELEMENT
    4.
    发明公开
    METHOD OF TREATING SEMICONDUCTOR ELEMENT 有权
    法半导体元件的处理

    公开(公告)号：EP2248160A1

    公开(公告)日：2010-11-10

    申请号：EP09716248.1

    申请日：2009-03-02

    申请人： Canon Kabushiki Kaisha

    发明人： OFUJI, Masato ,  ABE, Katsumi ,  SHIMIZU, Hisae ,  HAYASHI, Ryo ,  SANO, Masafumi ,  KUMOMI, Hideya ,  TAKAI, Yasuyoshi ,  KAWASAKI, Takehiko ,  KANEKO, Norio

    IPC分类号： H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

    摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10
    13 cm
    -2 eV
    -1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In-Ga-Zn-O (IGZO), amorphous In-Zn-O (IZO) and amorphous Zn-Sn-O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time- dependent change, electrical stress or thermal stress.

    LIGHT-EMITTING DEVICE USING OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS USING THE SAME
    6.
    发明公开
    LIGHT-EMITTING DEVICE USING OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS USING THE SAME 有权
    发光设备与薄膜晶体管和IMAGE氧化物半导体显示装置，其

    公开(公告)号：EP1999791A2

    公开(公告)日：2008-12-10

    申请号：EP07738086.3

    申请日：2007-03-02

    申请人： Canon Kabushiki Kaisha

    发明人： HAYASHI, Ryo ,  IWASAKI, Tatsuya

    IPC分类号： H01L27/32

    CPC分类号： H01L27/3244 ,  H01L27/3211 ,  H01L27/326 ,  H01L29/7869 ,  H01L2251/5323

    摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.

    BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS
    9.
    发明公开
    BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS 审中-公开
    薄膜晶体管下面GATE TYPE，工艺用于生产和显示装置

    公开(公告)号：EP2092569A1

    公开(公告)日：2009-08-26

    申请号：EP07832603.0

    申请日：2007-11-20

    申请人： Canon Kabushiki Kaisha

    发明人： HAYASHI, Ryo ,  KAJI, Nobuyuki ,  YABUTA, Hisato

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225

    摘要： Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

    THIN-FILM TRANSISTOR AND DISPLAY DEVICE OXIDE SEMICONDUCTOR AND GATE DIELECTRIC HAVING AN OXYGEN CONCENTRATION GRADIENT
    10.
    发明公开
    THIN-FILM TRANSISTOR AND DISPLAY DEVICE OXIDE SEMICONDUCTOR AND GATE DIELECTRIC HAVING AN OXYGEN CONCENTRATION GRADIENT 审中-公开
    印度尼西亚印度尼西亚麻醉药品安全基金会

    公开(公告)号：EP1984953A1

    公开(公告)日：2008-10-29

    申请号：EP07715131.4

    申请日：2007-02-23

    申请人： Canon Kabushiki Kaisha

    发明人： HAYASHI, Ryo ,  ABE, Katsumi ,  SANO, Masafumi

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969

    摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

    摘要翻译： 本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源极，漏极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得 在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。