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公开(公告)号：EP1634321A2
公开(公告)日：2006-03-15
申请号：EP04750801.5
申请日：2004-04-27
申请人： Caracal, Inc.
IPC分类号： H01L21/00
CPC分类号： C30B29/36 , C30B25/14 , Y10T117/10
摘要： A method of forming a silicon carbon compound. A silicon source is introduced into an environment. Silicon particles are formed therefrom. One or more hydrocarbons are introduced into the environment separately from the silicon source, thereby forming one or more silicon carbon compounds. A dissociation enhancer may be introduced into the environment to minimize silicon particle size prior to it joining the hydrocarbon source.
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公开(公告)号：EP2074244A2
公开(公告)日：2009-07-01
申请号：EP07813446.7
申请日：2007-07-27
申请人： Caracal, Inc.
CPC分类号： C30B29/36 , C23C16/45519 , C30B25/08 , C30B25/14 , C30B29/403 , H01L21/02529 , H01L21/0254 , H01L21/0262
摘要： A crystal growth process comprising providing a reactor having a crucible with an injector apparatus and a seed holder. The injector apparatus has an inner gas conduit and an outer gas conduit wherein an inert gas is introduced into the outer conduit. The injector apparatus has an upper injector and a lower injector and a gap therebetween. The upper injector temperature is maintained at a higher temperature than the lower injector.
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公开(公告)号：EP1984544A2
公开(公告)日：2008-10-29
申请号：EP07717395.3
申请日：2007-01-25
申请人： Caracal, Inc.
CPC分类号： C30B25/00 , C30B25/14 , C30B25/165 , C30B29/36 , Y10T117/1096
摘要： A method of forming silicon carbide wherein silicon and carbon precursors are successively pulsed into a reactor in the gas phase. The precursors react to form silicon carbide before reaching the growth surface. A precursor will be preheated in the reaction chamber before reacting with the other precursor. The formed silicon carbide sublime then condenses on a growth surface.
摘要翻译： 一种形成碳化硅的方法，其中硅和碳前体在气相中连续脉冲进入反应器。 前体在到达生长表面之前反应形成碳化硅。 前体将在与另一前体反应之前在反应室中预热。 所形成的碳化硅升华然后冷凝在生长表面上。
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