公开(公告)号：EP3384521A1

公开(公告)日：2018-10-10

申请号：EP16805094.6

申请日：2016-11-30

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique (CNRS)

发明人： FEUILLET, Guy ,  EL KHOURY MAROUN, Michel ,  VENNEGUES, Philippe ,  ZUNIGA PEREZ, Jesus

IPC分类号： H01L21/20 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/18 ,  H01L33/32

摘要： A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N), obtained using at least one from gallium (Ga), indium (In) and aluminium (Al), on an upper surface of a crystalline layer (410) made from silicon, characterised in that said method comprises the following steps: - etching, starting from the upper surface of the crystalline layer, of a plurality of parallel grooves (460) comprising at least two opposed inclined facets (330, 331), at least one (330) of said opposed facets (330, 331) having a crystalline orientation {111}; - masking the upper surface of the crystalline layer (410) in such a way that said facets (330) have a crystalline orientation {111} that is not masked; - epitaxially growing said semi-polar nitride layer (480) from said non-masked facets (330); characterised in that said etching is carried out starting from a stack comprising the crystalline layer (410) and at least one barrier layer (420) covered by the crystalline layer (30), and in that said etching etches said crystalline layer (410) in a selective manner with respect to said barrier layer (420) in such a way that said etching stops on contact with said barrier layer (420).

公开(公告)号：EP3420125A1

公开(公告)日：2019-01-02

申请号：EP17706453.2

申请日：2017-02-21

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： FEUILLET, Guy ,  EL KHOURY MAROUN, Michel ,  VENNEGUES, Philippe ,  ZUNIGA PEREZ, Jesus

IPC分类号： C30B25/18 ,  C30B29/40

公开(公告)号：EP3311394A1

公开(公告)日：2018-04-25

申请号：EP16731090.3

申请日：2016-06-16

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： EL KHOURY MAROUN, Michel ,  FEUILLET, Guy ,  VENNEGUES, Philippe ,  ZUNIGA PEREZ, Jesus

IPC分类号： H01L21/20

CPC分类号： H01L21/02647 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/30608 ,  H01L33/007

摘要： A subject of the invention relates to a method making it possible to obtain, on an upper surface of a crystalline substrate (310), a semi-polar layer (480) of nitride material comprising any one from among gallium, aluminium or indium, said method comprising the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves (320, 410, 420) which extend in a first direction, one of said two opposite facets (330) exhibiting a {111} crystal orientation; etching a plurality of parallel slices (450) which extend in a second direction that has undergone a rotation with respect to said first direction of the grooves (320, 410, 420) in such a way as to obtain individual facets (330') exhibiting a {111} crystal orientation; epitaxial growth of said material (480) from said individual facets (330').