公开(公告)号：EP4386823A1

公开(公告)日：2024-06-19

申请号：EP22212687.2

申请日：2022-12-12

申请人： Comptek Solutions OY

发明人： MÄKELÄ, Jaakko ,  LåNG, Jouko ,  CALVO Alonso, Vicente

IPC分类号： H01L21/677 ,  H01S5/028

CPC分类号： H01S5/0282 ,  H01S5/028 ,  H01L21/67748 ,  H01L21/67742 ,  H01L21/6719 ,  H01L21/67115 ,  H01L21/67207

摘要： Disclosed is a method (100) and a system (200) of passivating a cleaved semiconductor structure (202) for utilization as an edge-emitting laser device. The method (100) comprises providing an enclosure (204) having a first chamber (206) and a second chamber (208), a transfer arm (224) to receive and transfer a given structure (202), and a fixture (226) to mount the given structure thereon in the second chamber. The method (100) further comprises loading the cleaved semiconductor structure defining a first facet (202A), in the first chamber, onto the transfer arm therein, transferring the cleaved semiconductor structure using the transfer arm, exposing the first facet (202A) of the cleaved semiconductor structure to a cleaning beam from a cleaning source (214), and exposing the first facet of the cleaved semiconductor to an oxidation agent from an oxidizing source (218) to form an ordered oxide layer (236) on the first facet of the cleaved semiconductor structure.