-
公开(公告)号：EP1417722B1
公开(公告)日：2011-10-05
申请号：EP02752483.4
申请日：2002-07-22
申请人： Cree, Inc.
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerald H. , ANDREWS, Peter
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
-
公开(公告)号：EP1523776B1
公开(公告)日：2019-05-15
申请号：EP03765562.8
申请日：2003-07-15
申请人： Cree, Inc.
-
3.发明授权BONDING OF LIGHT EMITTING DIODES HAVING SHAPED SUBSTRATES AND COLLETS FOR BONDING OF LIGHT EMITTING DIODES HAVING SHAPED SUBSTRATES 有权设备与特殊形状的光衬底和夹头发光二极管于连接发光二极管具有特殊形状的光SUBSTRATES
公开(公告)号：EP1410426B1
公开(公告)日：2012-03-07
申请号：EP02763308.0
申请日：2002-07-22
申请人： CREE, INC. , CREE MICROWAVE, LLC
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerald H. , ANDREWS, Peter
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L24/32 , H01L33/20 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/00012 , H01L2924/00
摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
-
公开(公告)号：EP1512181B1
公开(公告)日：2009-01-14
申请号：EP03737130.9
申请日：2003-06-12
申请人： CREE, INC.
发明人： KELLER, Bernd , FU, Yankun , SERUTO, James , IBBETSON, James , BHARATHAN, Jayesh
CPC分类号： H01L33/50 , H01L33/507 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： A high efficiency, high yield emitter package is disclosed exhibiting limited wavelength variations between batches and consistent wavelength and emission characteristics with operation. One embodiment of an emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light. The conversion material is also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package, said emitter package emitting light at said one or more wavelength spectrums from said conversion material. The semiconductor emitter is preferably a light emitting diode (LED) or laser diode.
-
公开(公告)号：EP1792350A2
公开(公告)日：2007-06-06
申请号：EP05797533.6
申请日：2005-09-15
申请人： CREE, INC.
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing Silicon carbide on or above the light emitting region.
-
6.发明公开ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING 有权超薄OMSCHE联系p型发光组件而生产
公开(公告)号：EP1771893A2
公开(公告)日：2007-04-11
申请号：EP05776417.7
申请日：2005-07-27
申请人： Cree Inc.
发明人： RAFFETTO, Mark , BHARATHAN, Jayesh , HABERERN, Kevin , BERGMANN, Michael , EMERSON, David , IBBETSON, James , LI, Ting
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 A and a specific contact resistivity less than about 10-3 ohm-cm2.
-
-
8.发明授权ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING 有权超薄OMSCHE联系p型发光组件而生产
公开(公告)号：EP1771893B1
公开(公告)日：2015-03-18
申请号：EP05776417.7
申请日：2005-07-27
申请人： Cree, Inc.
发明人： RAFFETTO, Mark , BHARATHAN, Jayesh , HABERERN, Kevin , BERGMANN, Michael , EMERSON, David , IBBETSON, James , LI, Ting
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
-
9.发明公开LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR 审中-公开白细胞介素BIBRIESESCHICHTEN UND HERSTELLUNGSVEFAHREN
公开(公告)号：EP1523776A2
公开(公告)日：2005-04-20
申请号：EP03765562.8
申请日：2003-07-15
申请人： CREE, INC.
发明人： SLATER, JR., David, B. , WILLIAMS, Bradley, E. , ANDREWS, Peter, S. , EDMOND, John, A. , ALLEN, Scott, T. , BHARATHAN, Jayesh
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/38 , H01L2933/0016
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive Stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive Stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive Stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。
-
公开(公告)号：EP1512181A2
公开(公告)日：2005-03-09
申请号：EP03737130.9
申请日：2003-06-12
申请人： Cree, Inc.
发明人： KELLER, Bernd , FU, Yankun , SERUTO, James , IBBETSON, James , BHARATHAN, Jayesh
CPC分类号： H01L33/50 , H01L33/507 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： A high efficiency, high yield emitter package is disclosed exhibiting limited wavelength variations between batches and consistent wavelength and emission characteristics with operation. One embodiment of an emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light. The conversion material is also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package, said emitter package emitting light at said one or more wavelength spectrums from said conversion material. The semiconductor emitter is preferably a light emitting diode (LED) or laser diode.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.011 秒)
