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    PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
    1.
    发明公开
    PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES 审中-公开
    ON BIG BAND基于距离的半导体元件的钝化与氢免费溅射氮化物

    公开(公告)号：EP1897128A1

    公开(公告)日：2008-03-12

    申请号：EP06785888.6

    申请日：2006-06-28

    申请人： CREE, INC.

    发明人： RING, Zoltan ,  HAGLEITNER, Helmut ,  HENNING, Jason, Patrick ,  MACKENZIE, Andrew ,  ALLEN, Scott, T. ,  SHEPPARD, Scott, Thomas ,  SMITH, Richard, Peter ,  SRIRAM, Saptharishi ,  WARD, Allan, III

    IPC分类号： H01L21/314 ,  H01L21/318

    摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.