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1.发明公开WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED UTILIZING METHOD 审中-公开晶圆级荧光粉涂层方法以及使用该方法生产安排
公开(公告)号：EP2111648A2
公开(公告)日：2009-10-28
申请号：EP07840092.6
申请日：2007-11-20
申请人： Cree, Inc. , Seruto, James
发明人： SERUTO, James , CHITNIS, Ashay , IBBETSON, James , KELLER, Bernd , EMERSON, David, T. , EDMOND, John , BERGMANN, Michael, J. , CABALU, Jasper, S. , BRITT, Jeffrey, C. , CHAKRABORTY, Arpan , TARSA, Eric, J. , FU, Yankun
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
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公开(公告)号：EP1512181A2
公开(公告)日：2005-03-09
申请号：EP03737130.9
申请日：2003-06-12
申请人： Cree, Inc.
发明人： KELLER, Bernd , FU, Yankun , SERUTO, James , IBBETSON, James , BHARATHAN, Jayesh
CPC分类号： H01L33/50 , H01L33/507 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： A high efficiency, high yield emitter package is disclosed exhibiting limited wavelength variations between batches and consistent wavelength and emission characteristics with operation. One embodiment of an emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light. The conversion material is also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package, said emitter package emitting light at said one or more wavelength spectrums from said conversion material. The semiconductor emitter is preferably a light emitting diode (LED) or laser diode.
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3.发明授权WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED UTILIZING SAID METHOD 有权使用所述方法制造的晶片级磷光体涂覆方法和装置
公开(公告)号：EP2111649B1
公开(公告)日：2017-09-27
申请号：EP07874432.3
申请日：2007-11-20
申请人： Cree, Inc.
发明人： CHITNIS, Ashay , IBBETSON, James , CHAKRABORTY, Arpan , TARSA, Eric, J. , KELLER, Bernd , SERUTO, James , FU, Yankun
CPC分类号： H01L33/62 , H01L23/3114 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/507 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
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4.发明公开
公开(公告)号：EP2111649A2
公开(公告)日：2009-10-28
申请号：EP07874432.3
申请日：2007-11-20
申请人： Cree, Inc.
发明人： CHITNIS, Ashay , IBBETSON, James , CHAKRABORTY, Arpan , TARSA, Eric, J. , KELLER, Bernd , SERUTO, James , FU, Yankun
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L23/3114 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/507 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时留下所述LED上的至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。
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公开(公告)号：EP2111648B1
公开(公告)日：2019-05-15
申请号：EP07840092.6
申请日：2007-11-20
申请人： Cree, Inc.
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公开(公告)号：EP1512181B1
公开(公告)日：2009-01-14
申请号：EP03737130.9
申请日：2003-06-12
申请人： CREE, INC.
发明人： KELLER, Bernd , FU, Yankun , SERUTO, James , IBBETSON, James , BHARATHAN, Jayesh
CPC分类号： H01L33/50 , H01L33/507 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： A high efficiency, high yield emitter package is disclosed exhibiting limited wavelength variations between batches and consistent wavelength and emission characteristics with operation. One embodiment of an emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light. The conversion material is also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package, said emitter package emitting light at said one or more wavelength spectrums from said conversion material. The semiconductor emitter is preferably a light emitting diode (LED) or laser diode.
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