公开(公告)号：EP2111648A2

公开(公告)日：2009-10-28

申请号：EP07840092.6

申请日：2007-11-20

申请人： Cree, Inc. ,  Seruto, James

发明人： SERUTO, James ,  CHITNIS, Ashay ,  IBBETSON, James ,  KELLER, Bernd ,  EMERSON, David, T. ,  EDMOND, John ,  BERGMANN, Michael, J. ,  CABALU, Jasper, S. ,  BRITT, Jeffrey, C. ,  CHAKRABORTY, Arpan ,  TARSA, Eric, J. ,  FU, Yankun

IPC分类号： H01L33/00

CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/387 ,  H01L33/44 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

公开(公告)号：EP3188366A3

公开(公告)日：2017-10-04

申请号：EP16199608.7

申请日：2008-05-13

申请人： Cree, Inc.

发明人： CHITNIS, Ashay

IPC分类号： H03H3/02 ,  H03H3/04 ,  H03H9/05 ,  H03H9/17

摘要： A bulk acoustic wave (BAW) device, comprising: first and second metal electrodes; a carrier substrate; and a Group-111 nitride epitaxial layer electrically coupled to said first and second electrodes, wherein said first electrode comprises at least two distinct portions with each of said portions between said carrier substrate and said epitaxial layer, said Group-111 nitride epitaxial layer not more than approximately 0.4 microns thick.
A bulk acoustic wave (BAW) device, comprising: first and second electrodes, said first electrode comprising at least two electrically isolated portions, said second electrode electrically connected to one of said at least two portions with a via; a Group-111 nitride layer electrically coupled to said first and second electrodes, wherein said Group-111 nitride layer is not more than approximately 0.4 microns thick; and a substrate, said first electrode adjacent to said substrate; wherein said first and second electrodes are electrically connected to different portions of a surface of said substrate opposite said Group-III nitride layer.

摘要翻译： 一种体声波（BAW）器件，包括：第一和第二金属电极; 载体衬底; 以及与所述第一和第二电极电耦合的III族氮化物外延层，其中所述第一电极包括至少两个不同的部分，所述载体衬底和所述外延层之间的所述部分中的每一个都不具有所述部分，所述III族氮化物外延层不多于 比约0.4微米厚。 一种体声波（BAW）装置，包括：第一和第二电极，所述第一电极包括至少两个电隔离部分，所述第二电极通过通孔电连接到所述至少两个部分中的一个; 电耦合到所述第一和第二电极的III族氮化物层，其中所述III族氮化物层不大于约0.4微米厚; 和衬底，所述第一电极与所述衬底相邻; 其中所述第一和第二电极电连接到所述衬底的与所述III族氮化物层相对的表面的不同部分。

公开(公告)号：EP2283526A2

公开(公告)日：2011-02-16

申请号：EP09728238.8

申请日：2009-03-31

申请人： Cree, Inc.

发明人： CHITNIS, Ashay ,  EDMOND, John ,  BRITT, Jeffrey, C. ,  KELLER, Bernd, P. ,  EMERSON, David, T. ,  BERGMANN, Michael, John ,  CABALU, Jasper, S.

IPC分类号： H01L33/00

CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

公开(公告)号：EP2111648B1

公开(公告)日：2019-05-15

申请号：EP07840092.6

申请日：2007-11-20

申请人： Cree, Inc.

发明人： SERUTO, James ,  CHITNIS, Ashay ,  IBBETSON, James ,  KELLER, Bernd ,  EMERSON, David, T. ,  EDMOND, John ,  BERGMANN, Michael, J. ,  CABALU, Jasper, S. ,  BRITT, Jeffrey, C. ,  CHAKRABORTY, Arpan ,  TARSA, Eric, J. ,  FU, Yankun

IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/00 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54

公开(公告)号：EP2111649B1

公开(公告)日：2017-09-27

申请号：EP07874432.3

申请日：2007-11-20

申请人： Cree, Inc.

发明人： CHITNIS, Ashay ,  IBBETSON, James ,  CHAKRABORTY, Arpan ,  TARSA, Eric, J. ,  KELLER, Bernd ,  SERUTO, James ,  FU, Yankun

IPC分类号： H01L33/00 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/38

CPC分类号： H01L33/62 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/501 ,  H01L33/507 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

公开(公告)号：EP2220692A2

公开(公告)日：2010-08-25

申请号：EP08848823.4

申请日：2008-09-11

申请人： Cree, Inc.

发明人： KELLER, Bernd ,  CHITNIS, Ashay ,  MEDENDORP, Nicholas, W., Jr. ,  IBBETSON, James ,  BATRES, Max

IPC分类号： H01L33/00

CPC分类号： H01L25/0756 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/45099

摘要： A wire-bond free semiconductor device with two electrodes (422, 424) both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers (404, 406), each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source', obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers (426) or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

摘要翻译： 具有两个电极的无引线键合半导体器件，两者均可从器件的底部接近。 该器件由与相对掺杂的外延层电连接的两个电极制成，这些电极中的每一个具有带有底侧接入点的引线。 这种结构允许器件被外部电压/电流源偏置，避免了在封装级别必须形成的引线接合或其他这样的连接机构的需要。 因此，传统上在包装级别添加到设备的特征（例如，磷光体层或密封剂）可以包括在晶片级制造工艺中。 此外，底侧电极足够厚以为器件提供主要的结构支撑，从而无需离开生长衬底作为成品器件的一部分。

公开(公告)号：EP2111649A2

公开(公告)日：2009-10-28

申请号：EP07874432.3

申请日：2007-11-20

申请人： Cree, Inc.

发明人： CHITNIS, Ashay ,  IBBETSON, James ,  CHAKRABORTY, Arpan ,  TARSA, Eric, J. ,  KELLER, Bernd ,  SERUTO, James ,  FU, Yankun

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/501 ,  H01L33/507 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时留下所述LED上的至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

公开(公告)号：EP3188366B1

公开(公告)日：2020-08-26

申请号：EP16199608.7

申请日：2008-05-13

申请人： Cree, Inc.

发明人： CHITNIS, Ashay

IPC分类号： H03H3/02 ,  H03H3/04 ,  H03H9/05 ,  H03H9/17

公开(公告)号：EP2283526B1

公开(公告)日：2019-12-11

申请号：EP09728238.8

申请日：2009-03-31

申请人： Cree, Inc.

发明人： CHITNIS, Ashay ,  EDMOND, John ,  BRITT, Jeffrey, C. ,  KELLER, Bernd, P. ,  EMERSON, David, T. ,  BERGMANN, Michael, John ,  CABALU, Jasper, S.

IPC分类号： H01L33/50 ,  H01L33/00

公开(公告)号：EP3188366A2

公开(公告)日：2017-07-05

申请号：EP16199608.7

申请日：2008-05-13

申请人： Cree, Inc.

发明人： CHITNIS, Ashay

IPC分类号： H03H3/02 ,  H03H3/04 ,  H03H9/05 ,  H03H9/17

摘要： A bulk acoustic wave (BAW) device, comprising: first and second metal electrodes; a carrier substrate; and a Group-111 nitride epitaxial layer electrically coupled to said first and second electrodes, wherein said first electrode comprises at least two distinct portions with each of said portions between said carrier substrate and said epitaxial layer, said Group-111 nitride epitaxial layer not more than approximately 0.4 microns thick.
A bulk acoustic wave (BAW) device, comprising: first and second electrodes, said first electrode comprising at least two electrically isolated portions, said second electrode electrically connected to one of said at least two portions with a via; a Group-111 nitride layer electrically coupled to said first and second electrodes, wherein said Group-111 nitride layer is not more than approximately 0.4 microns thick; and a substrate, said first electrode adjacent to said substrate; wherein said first and second electrodes are electrically connected to different portions of a surface of said substrate opposite said Group-III nitride layer.