利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

54 条记录 (耗时 0.019 秒)

    WHITE LEDS WITH EMISSION WAVELENGTH CORRECTION
    5.
    发明公开
    WHITE LEDS WITH EMISSION WAVELENGTH CORRECTION 审中-公开
    发光波长校正白光LED

    公开(公告)号：EP2748863A1

    公开(公告)日：2014-07-02

    申请号：EP12758693.1

    申请日：2012-08-14

    申请人： Cree, Inc.

    发明人： IBBETSON, James ,  KELLER, Bernd ,  LETOQUIN, Ronan ,  DONOFRIO, Matthew ,  BERGMANN, Michael

    IPC分类号： H01L33/00 ,  H01L33/50

    CPC分类号： H01L33/504 ,  H01L33/0095 ,  H01L2933/0041

    摘要： Methods for fabricating semiconductor light-emitting devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied (step 44) to the semiconductor devices. A portion of the base conversion material is removed (step 46). At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either after (step 48) or before (step 52) the application of the base conversion material.

    WIRE BOND FREE WAFER LEVEL LED
    7.
    发明公开
    WIRE BOND FREE WAFER LEVEL LED 审中-公开
    DRAHTBONDFREIE LED AUF WAFEREBENE

    公开(公告)号：EP2220692A2

    公开(公告)日：2010-08-25

    申请号：EP08848823.4

    申请日：2008-09-11

    申请人： Cree, Inc.

    发明人： KELLER, Bernd ,  CHITNIS, Ashay ,  MEDENDORP, Nicholas, W., Jr. ,  IBBETSON, James ,  BATRES, Max

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0756 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/45099

    摘要： A wire-bond free semiconductor device with two electrodes (422, 424) both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers (404, 406), each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source', obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers (426) or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

    摘要翻译： 具有两个电极的无引线键合半导体器件，两者均可从器件的底部接近。 该器件由与相对掺杂的外延层电连接的两个电极制成，这些电极中的每一个具有带有底侧接入点的引线。 这种结构允许器件被外部电压/电流源偏置，避免了在封装级别必须形成的引线接合或其他这样的连接机构的需要。 因此，传统上在包装级别添加到设备的特征（例如，磷光体层或密封剂）可以包括在晶片级制造工艺中。 此外，底侧电极足够厚以为器件提供主要的结构支撑，从而无需离开生长衬底作为成品器件的一部分。

    WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED ULTILIZING METHOD
    8.
    发明公开
    WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED ULTILIZING METHOD 有权
    波士顿维多利亚州赫尔辛基维多利亚州

    公开(公告)号：EP2111649A2

    公开(公告)日：2009-10-28

    申请号：EP07874432.3

    申请日：2007-11-20

    申请人： Cree, Inc.

    发明人： CHITNIS, Ashay ,  IBBETSON, James ,  CHAKRABORTY, Arpan ,  TARSA, Eric, J. ,  KELLER, Bernd ,  SERUTO, James ,  FU, Yankun

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/501 ,  H01L33/507 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

    摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时留下所述LED上的至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

    SOLID STATE LIGHTING COMPONENT
    9.
    发明公开
    SOLID STATE LIGHTING COMPONENT 审中-公开

    公开(公告)号：EP3657558A2

    公开(公告)日：2020-05-27

    申请号：EP20150591.4

    申请日：2009-03-13

    申请人： Cree, Inc.

    发明人： YUAN, Thomas ,  KELLER, Bernd ,  IBBETSON, James ,  TARSA, Eric J. ,  NEGLEY, Gerald

    IPC分类号： H01L33/58 ,  H01L25/075 ,  F21K9/66 ,  H01L33/60 ,  H05B45/20 ,  H05B45/40

    摘要： A white light emitting diode (LED) package (60) comprising an array of LED chips (62) mounted on a planar surface of a submount (64) with the LED chips (62) capable of emitting light in response to an electrical signal. The LED chips (62) comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens (66) is overmolded over the LED array. The diameter of the overmolded lens (66) is greater than 5 millimeters, which is the same as or larger than the width of the LED array.