摘要:
A gas discharge laser having a laser chamber with two elongated erodable electrode elements (83 and 84), each having an erodable section and an electrode support configured to minimize discharge region laser gas turbulence and with the electrode elements being configured to permit gradual erosion over more than 8 billion pulses without causing substantial changes in the shape of electrical discharges between the electrode elements. A pulse power system provides electrical pulses of at least 2J at rates of at least 2 KHz. A blower (4A) circulates laser gas between the electrodes at speeds of at least 2 m/s and a heat exchanger (6A) is provided to remove heat produced by the blower and the discharges.
摘要:
A gas discharge laser having a laser chamber with two elongated erodable electrode elements (83 and 84), each having an erodable section and an electrode support configured to minimize discharge region laser gas turbulence and with the electrode elements being configured to permit gradual erosion over more than 8 billion pulses without causing substantial changes in the shape of electrical discharges between the electrode elements. A pulse power system provides electrical pulses of at least 2J at rates of at least 2 KHz. A blower (4A) circulates laser gas between the electrodes at speeds of at least 2 m/s and a heat exchanger (6A) is provided to remove heat produced by the blower and the discharges.
摘要:
A grating based line narrowing device for line narrowing lasers producing high energy laser beams. Techniques are provided for minimizing adverse effects of hot gas layers present on the face of the grating. In preferred embodiments the effect of the hot gas layer is reduced with the use of helium as a purge gas. One of the preferred embodiments includes a barrier plate (60) and a barrier cover (62) to force the purge flow across the face of the grating. In further embodiments the purge gas pressure is reduced to reduce the optical effects of the hot gas layer.
摘要:
An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The masters oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength an a pulse to pulse basis at repetition rates of 4,000 Hz or greater to precision of less that 0.2 pm.
摘要:
A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium (master oscillator) is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2 laser gain medium. The output beam of the system is a pulsed laser beam with a full width half maximum band width of about 0.1 pm or less with pulse energy in excess of about 5 mJ. In a preferred embodiment the pre-gain filter includes a wavelength monitor that permits feedback control over the centreline wavelength so that the pre-gain filter optics can be adjusted to ensure that the desired bandwidth range is injected into the power gain stage.
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers (10A, 12A) are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam which is amplified in the second discharge chamber (12). The chambers (10A, 12A) can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator (10) and optimization of pulse energy parameters in the amplifying chamber (12A). A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber (10A, 12A) comprises a single tangential fan (10A, 10) providing sufficient gas flow (11) to permit operation at pulse rates of 4,000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator (10) is equipped with a line narrowing package (16, 16A) having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4,000 Hz or greater to a precision of less than 0.2 pm.
摘要:
A single chamber gas discharge laser system having a pulse power source for producing electrical discharges at the rate of at least 1000 pulses per second. The discharge, along with laser optics, create two short lived gain media, one for producing a seed beam and the other for amplifying the seed beam. Laser gas circulation around a chamber circulation path is provided and the electrodes (18A) and discharges are arranged so that debris from one of the gain medium is not circulated to the other gain medium during discharges until the debris has made a loop around at least 90 % of the chamber circulation path.
摘要:
A turnable injection seeded very narrow band F2 lithography laser. The laser (60) combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam (LNP15) operated in a first gain medium which beam (102) is used to stimulate narrow bnd lasing in a second gain medium to produce a very narrow band laser useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers (164A, 164B) are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.
摘要:
An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.