公开(公告)号：EP0871209A4

公开(公告)日：2006-02-08

申请号：EP96937559

申请日：1996-11-11

申请人： DAIKIN IND LTD

发明人： KEZUKA TAKEHIKO ,  SUYAMA MAKOTO ,  KAMIYA FUMIHIRO ,  ITANO MITSUSHI

IPC分类号： C11D1/22 ,  C11D1/24 ,  C11D1/29 ,  C11D3/02 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306 ,  H01L21/304 ,  C11D1/12 ,  C11D3/04 ,  C11D3/20 ,  C11D17/08 ,  H01L21/308

CPC分类号： H01L21/02052 ,  C11D1/24 ,  C11D1/29 ,  C11D3/042 ,  C11D3/3947 ,  C11D7/08 ,  C11D11/0047

摘要： The present invention provides a wafer treating solution in which at least one of CnH2n+1ph(SO3M)Oph(SO3M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; CnH2n+1phO(CH2CH2O)mSO3M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and CnH2n+1O(CH2CH2O)mSO3M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt% of hydrogen fluoride (HF), and the remainder is water (100 wt% in total) , and a method for preparing a low concentration of wafer treating solution by adding water, H2O2, HNO3, CH3COOH, NH4F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by CnH2n+1ph(SO3M)Oph(SO3M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; CnH2n+1ph(CH2CH2O)mSO3M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and CnH2n+1O(CH2CH2O)mSO3M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.01 to 1000 ppm in at least one of HF, H2O2, HNO3, CH3COOH, NH4F, HCl, H3PO4 and an ammonium hydroxide represented by a formula: Ä(R1) (R2) (R3) (R4)NÜ OH wherein R1 , R2 , R3 and R4 are an alkyl group of 1 to 6 carbon atoms which may have a hydroxyl group as a substitutent, and the remainder is water (100 wt% in total).

摘要翻译： 本发明提供一种晶片处理溶液，其中ph为亚苯基，n为5〜20，M为氢或盐的CnH2n + 1ph（SO3M）Oph（SO3M）中的至少一种; CnH2n + 1phO（CH2CH2O）mSO3M其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，溶解在20至60重量％的氟化氢（HF）中，为0.1至1000ppm， 其余为水（总计100重量％），以及通过向上述溶液中加入水，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F等制备低浓度晶片处理溶液的方法。 本发明还提供一种晶片处理溶液，其中至少一种由CnH2n + 1ph（SO3M）Oph（SO3M）表示的表面活性剂，其中ph为亚苯基，n为5至20，M为氢或盐; CnH2n + 1ph（CH2CH2O）mSO3M其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，在HF，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F中的至少一种中溶解于0.01至1000ppm ，HCl，H 3 PO 4和由下式表示的氢氧化铵：Ä（R1）（R2）（R3）（R4）NÜ+ OH其中R1，R2，R3和R4是1至6的烷基 可以具有羟基作为取代基的碳原子，其余为水（总计100重量％）。

公开(公告)号：EP1168424A4

公开(公告)日：2005-12-21

申请号：EP99972782

申请日：1999-11-22

申请人： DAIKIN IND LTD

发明人： KEZUKA TAKEHIKO ,  SUYAMA MAKOTO ,  ITANO MITSUSHI

IPC分类号： H01L21/308 ,  C09K13/08 ,  C23F1/16 ,  H01L21/311 ,  H01L21/306

CPC分类号： H01L21/31111 ,  C09K13/08

摘要： An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 ANGSTROM /min or less at 25 DEG C, and an etching rate ratio : etching rate for BPSG / etching rate for a thermally oxidized film (THOX) of 1.5 or less.

公开(公告)号：EP1150342A4

公开(公告)日：2005-12-21

申请号：EP99972781

申请日：1999-11-22

申请人： DAIKIN IND LTD

发明人： KEZUKA TAKEHIKO ,  SUYAMA MAKOTO ,  ITANO MITSUSHI

IPC分类号： H01L21/308 ,  C03C15/00 ,  C09K13/08 ,  C23F1/16 ,  H01L21/311 ,  H01L21/306

CPC分类号： C09K13/08 ,  C03C15/00 ,  H01L21/31111

摘要： An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25 DEG C.

摘要翻译： 含有氟化氢（HF）并且表现出蚀刻速率比率：对于硼玻璃膜（BSG）或硼磷玻璃膜（BPSG）的蚀刻速率/对于热氧化膜（THOX）的蚀刻速率 在25℃下10或更多

公开(公告)号：EP3121160A4

公开(公告)日：2017-12-06

申请号：EP15765516

申请日：2015-03-19

申请人： DAIKIN IND LTD

发明人： YAMAMOTO YUUKI ,  NOSE MASATOSHI ,  NAMIKAWA TAKASHI ,  NOMURA TAKASHI ,  ISHIHARA SUMI ,  YOSHIYAMA ASAKO ,  KISHIMOTO MASAYUKI ,  SUYAMA MAKOTO ,  ADACHI KENJI ,  KISHIKAWA YOSUKE

IPC分类号： C07C41/01 ,  C07C41/16 ,  C07C43/225 ,  C07C327/26

CPC分类号： C07C327/26 ,  C07C41/01 ,  C07C41/16 ,  C07C43/225

摘要： An object of the present invention is to provide a method for producing a compound having an oxydifluoromethylene skeleton at a high yield by a simple process without using highly toxic starting materials, such as dibromodifluoromethane, while generating almost no difficult-to-separate impurities. A reaction between a thionocarboxylic acid ester (which may be obtained by a reaction between a halogenated thiocarbonyl compound and a specific compound as required) and a compound represented by Formula: XF n (wherein X represents chlorine, bromine, or iodine, and n represents a natural number of 1 to 5) gives a compound having an oxydifluoromethylene skeleton at a high yield. Various groups, such as an aromatic ring group, may also be introduced in high yield by reacting this compound with a boronic acid compound and the like as required.

公开(公告)号：EP0805484A4

公开(公告)日：1998-04-01

申请号：EP96900431

申请日：1996-01-11

申请人： DAIKIN IND LTD

发明人： ITANO MITSUSHI ,  KEZUKA TAKEHIKO ,  SUYAMA MAKOTO

IPC分类号： B08B3/08 ,  C11D3/04 ,  C11D3/395 ,  C23F1/16 ,  C23G1/02 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052

摘要： A method of removing particles adherent to substrates, in particular, silicon wafer substrates by cleaning with an ammonia-hydrogen peroxide solution mixture, rinsing with ultrapure water, cleaning with hydrofluoric acid, and rinsing with ultrapure water, wherein an anionic surfactant is added to the hydrofluoric acid and, if necessary, to the ammonia-hydrogen peroxide solution mixture. As the particles detached in the step of cleaning with an ammonia-hydrogen peroxide solution mixture are not absorbed again in the step of cleaning with hydrofluoric acid, the particle removal rate is remarkably improved.

摘要翻译： 在从基板，特别是硅晶片基板上去除颗粒的方法中，包括以下步骤：用氨和过氧化氢水溶液清洗基板，用超纯水冲洗基板，用氟代酸洗涤基板，并用 将超纯水，阴离子表面活性剂加入到含氟羟酸中，任选地加入含有氨和过氧化氢水溶液的混合物中。 该方法显着提高了除尘速率，因为在清洗步骤中使用含有氨和含水过氧化氢的混合物在基板上除去的颗粒在使用氟化氢的清洗步骤中在基板上未被吸附。