摘要:
The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.
摘要:
The invention provides a process for the preparation of 1,1,1,2,2-pentafluoroethane by fluorinating in the gas phase a halogenated hydrocarbon feedstock containing 2-chloro-1,1,1,2-tetrafluoroethane with hydrogen fluoride, the process being characterized in that:
(i) a fluorinated chromium oxide obtained by fluorinating a chromium oxide represented by the formula: CrOm (1.5 (ii) the mixing ratio (by mole) of hydrogen fluoride to halogenated hydrocarbon feedstock ranges from 1.5 to 10, and (iii) the fluorination is conducted at a temperature of 250 to 350°C.
The process makes it possible to prepare easily HFC-125 reduced in the contents of CFCs.