公开(公告)号：EP4333026A1

公开(公告)日：2024-03-06

申请号：EP22811162.1

申请日：2022-05-11

申请人： Disco Corporation ,  Denka Company Limited

发明人： MOTOIKE, Shingo ,  IIZUKA, Kazuki ,  NAKAMURA, Masashi ,  HASUMI, Mizuki

IPC分类号： H01L21/304 ,  B32B27/00 ,  C09J7/29 ,  C09J7/40 ,  C09J201/00 ,  H01L21/683

摘要： The present invention aims to provide an adhesive sheet for back grinding capable of enhance followability of a base material layer to a convex part of a semiconductor wafer.
According to the present invention, provided is an adhesive sheet for back grinding of a semiconductor wafer having a convex part, comprising: a base material layer; and an adhesive layer provided on the base material layer, wherein: the adhesive layer comprises an opening part having a diameter smaller than a diameter of the semiconductor wafer; the adhesive layer is adhered to an outer peripheral part of the semiconductor wafer such shat the convex part of the semiconductor wafer is placed in the opening part; the adhesive layer is configured so that the convex part is protected by the base material layer with the semiconductor wafer adhered to the adhesive layer; the base material layer comprises a cushion layer and a barrier layer; and an oxygen permeability of the base material layer at 25°C and at RH0% measured base on JIS K 7126-2 (isobaric method) is 1000 ml/(m 2 ·24h·atm) or lower.

公开(公告)号：EP4333025A1

公开(公告)日：2024-03-06

申请号：EP22811161.3

申请日：2022-05-11

申请人： Disco Corporation ,  Denka Company Limited

发明人： MOTOIKE, Shingo ,  IIZUKA, Kazuki ,  NAKAMURA, Masashi ,  HASUMI, Mizuki

IPC分类号： H01L21/304 ,  B32B27/00 ,  C09J7/29 ,  C09J7/38 ,  C09J133/00 ,  H01L21/683

摘要： The present invention aims to provide an adhesive sheet for back grinding capable of suppressing peeling of an adhesive layer and capable of peeling a wafer easily from an adhesive sheet.
According to the present invention, provided is an adhesive sheet for back grinding of a semiconductor wafer having a convex part, comprising: a base material layer; and an adhesive layer provided on the base material layer, wherein: the adhesive layer comprises an opening part having a diameter smaller than a diameter of the semiconductor wafer; the adhesive layer is adhered to an outer peripheral part of the semiconductor wafer so shat the convex part of the semiconductor wafer is placed in the opening part; the adhesive layer is configured so that the convex part is protected by the base material layer with the semiconductor wafer adhered to the adhesive layer; the base material layer comprises a cushion layer and a surface treatment layer provided thereon; the adhesive layer is provided on the surface treatment layer; the surface treatment layer is formed of an acrylic resin composition containing an acrylic resin; the acrylic resin is cross-linked by light irradiation or heating; and the adhesive layer is formed of an acrylic resin composition containing an acrylic resin.

公开(公告)号：EP4407659A1

公开(公告)日：2024-07-31

申请号：EP22883392.7

申请日：2022-10-07

申请人： Denka Company Limited

发明人： HASUMI, Mizuki ,  MOTOIKE, Shingo ,  IIZUKA, Kazuki ,  NAKAMURA, Masashi

IPC分类号： H01L21/304 ,  B32B27/00 ,  C09J7/20 ,  C09J7/29 ,  C09J7/38 ,  C09J201/00 ,  H01L21/301 ,  H01L21/683

CPC分类号： B32B27/00 ,  C09J7/29 ,  C09J7/38 ,  C09J7/20 ,  C09J201/00 ,  H01L21/30 ,  H01L21/304 ,  H01L21/683

摘要： The present invention provides a base material for semiconductor wafer processing, the base material being capable of enhancing adhesion to a stage in a semiconductor wafer processing step. The present invention provides a base material which is used for an adhesive sheet for processing a semiconductor wafer having a projected part, wherein the thermal shrinkages of the base material in the machine direction (MD) and in the transverse direction (TD) after heating at 130°C for 10 minutes are both 0% or more.