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公开(公告)号：EP2820656A1
公开(公告)日：2015-01-07
申请号：EP13709650.9
申请日：2013-02-27
IPC分类号： H01B1/22
CPC分类号： H01L31/022425 , H01B1/22 , H01L31/0224 , Y02E10/50
摘要： A silver paste comprising particulate silver, at least one glass frit, and an organic vehicle, wherein the particulate silver includes 10 to 100 wt-% of spherically-shaped silver particles, based on the total weight of the particulate silver, wherein the spherically-shaped silver particles have an average particle size in the range of 1 to 3 µm, a crystallite size in the range of 40 to 60 nm and a smooth particle surface.
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2.发明公开
公开(公告)号：EP2250650A1
公开(公告)日：2010-11-17
申请号：EP09720025.7
申请日：2009-03-11
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , H01L31/022425 , Y02E10/50
摘要： Disclosed are aluminum pastes comprising particulate aluminum, a zinc-organic component and an organic vehicle and their use in forming p- type aluminum back electrodes of silicon solar cells.
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3.发明公开LEAD-FREE CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MG-CONTAINING ADDITIVE 审中-公开无铅导电组合和使用半导体器件工艺的生产：镁添加剂
公开(公告)号：EP2193527A1
公开(公告)日：2010-06-09
申请号：EP08840658.2
申请日：2008-10-16
发明人： YOUNG, Richard, John, Sheffield , ROSE, Michael , MIKESKA, Kurt, Richard , CARROLL, Alan, Frederick , HANG, Kenneth, Warren , PRINCE, Alistair, Graeme
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H05K1/092 , Y02E10/547 , Y02P70/521 , Y10T428/31536
摘要： Described herein are a silicon semiconductor device and a conductive lead-free silver paste for use in the front side of a solar cell device.
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4.发明公开A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE 审中-公开用于生产半导体衬底的p型掺杂铝表面区域
公开(公告)号：EP2774187A1
公开(公告)日：2014-09-10
申请号：EP12798919.2
申请日：2012-11-05
IPC分类号： H01L31/18 , H01L31/0224 , H01L21/22 , H01L21/225
CPC分类号： H01L31/1804 , H01L21/2205 , H01L21/2254 , H01L31/022425 , H01L31/02245 , H01L31/06 , Y02E10/547 , Y02P70/521
摘要： A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
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5.发明公开A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE 审中-公开用于生产的N型掺杂的半导体衬底P掺杂铝表面面积
公开(公告)号：EP2774183A1
公开(公告)日：2014-09-10
申请号：EP12787620.9
申请日：2012-11-05
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/0288 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
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6.发明授权
公开(公告)号：EP2294586B1
公开(公告)日：2013-07-17
申请号：EP09755759.9
申请日：2009-05-29
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7.发明公开
公开(公告)号：EP2294586A1
公开(公告)日：2011-03-16
申请号：EP09755759.9
申请日：2009-05-29
发明人： LAUDISIO, Giovanna , OLLIVIER, Patricia, J. , ROSE, Michael , SMITH, Jerome, David , YOUNG, Richard
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , C03C8/10 , C03C8/12 , C03C8/16 , C03C8/18 , H01L31/022425 , H01L31/18 , H05K1/092 , Y02E10/50
摘要： Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
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8.发明授权
公开(公告)号：EP2250650B1
公开(公告)日：2011-08-10
申请号：EP09720025.7
申请日：2009-03-11
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , H01L31/022425 , Y02E10/50
摘要： Disclosed are aluminum pastes comprising particulate aluminum, a zinc-organic component and an organic vehicle and their use in forming p- type aluminum back electrodes of silicon solar cells.
摘要翻译： 公开了包含粒状铝，锌有机组分和有机载体的铝浆及其在形成硅太阳能电池的p型铝背电极中的用途。
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9.发明公开CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MG-CONTAINING ADDITIVE 审中-公开导电组合和使用半导体器件工艺的生产：镁添加剂
公开(公告)号：EP2193526A1
公开(公告)日：2010-06-09
申请号：EP08839117.2
申请日：2008-10-16
发明人： YOUNG, Richard, John, Sheffield , ROSE, Michael , MIKESKA, Kurt, Richard , CARROLL, Alan, Frederick , HANG, Kenneth, Warren , PRINCE, Alistair, Graeme
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L21/2225 , H01L31/022425 , H05K1/092 , Y10T428/31536 , Y10T428/31663 , Y10T428/31678
摘要： Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.
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