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1.发明公开ATOMIC LAYER DEPOSITION OF RUTHENIUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND SELECTED RUTHENIUM COMPLEXES 审中-公开ATOM管理存放率含钌薄膜中表面活化剂和选定的钌
公开(公告)号：EP1913174A1
公开(公告)日：2008-04-23
申请号：EP06789514.4
申请日：2006-08-07
IPC分类号： C23C16/455 , C23C16/18
CPC分类号： H01L21/76873 , C23C16/02 , C23C16/18 , C23C16/45525 , C23C16/45534 , H01L21/28562
摘要： This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes using surface-activating agents, and to ruthenium complexes that can be used as ruthenium precursors in these processes.
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公开(公告)号：EP1828385B1
公开(公告)日：2013-08-28
申请号：EP05854909.8
申请日：2005-12-21
发明人： PAYNE, Mark, S. , DICOSIMO, Robert , THOMPSON, Jeffery, Scott , O'KEEFE, Daniel, P. , PANOVA, Anna
IPC分类号： C12N15/55
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3.发明授权VOLATILE COPPER(I) COMPLEXES FOR DEPOSITION OF COPPER FILMS BY ATOMIC LAYER DEPOSITION 有权用于分离铜膜通过原子层沉积中挥发铜（I）配合物（ALD）
公开(公告)号：EP1613789B1
公开(公告)日：2008-12-24
申请号：EP04750189.5
申请日：2004-04-16
IPC分类号： C23C16/18 , C30B25/02 , C30B29/02 , C07C249/02 , C07C249/16
CPC分类号： C07F1/08 , C23C16/18 , C23C16/45553 , Y10T428/31681
摘要： The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.
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4.发明公开ATOMIC LAYER DEPOSITION OF METAL-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS 审中-公开含金属薄膜Atom的位置分离使用表面活化基金
公开(公告)号：EP1920081A2
公开(公告)日：2008-05-14
申请号：EP06789512.8
申请日：2006-08-07
IPC分类号： C23C16/455
CPC分类号： C23C16/18 , C23C16/45525 , C23C16/45534 , C23C16/45553 , H01L21/28562
摘要： Atomic layer deposition processes for the formation of metal-containing films on surfaces are provided. These Processes comprise in their broadest aspects: (a) exposing the surface to a surface-activating agent to form a deposit of a surface-activating complex on the surface; (b) exposing the deposit of the surface-activating complex to a metal precursor to form a deposit of a metal complex on the surface ; and (c) reacting the deposited metal complex with a reducing agent to form an oxide-free metal-containing filmon the surface, wherein the metal is selected from the group consisting of Co, Ni, Pt, Pd, Ir, and W.
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5.发明公开VOLATILE COPPER(II) COMPLEXES FOR DEPOSITION OF COPPER FILMS BY ATOMIC LAYER DEPOSITION 审中-公开FOR分离覆铜层VOLATILE铜（II）配合物USING ATOM FILMS的分离
公开(公告)号：EP1466032A1
公开(公告)日：2004-10-13
申请号：EP03750016.2
申请日：2003-01-21
IPC分类号： C23C16/18 , C07F1/08 , C07C249/02 , C07C249/16 , C07C251/78 , C07C251/16 , C07C251/12
CPC分类号： C07D213/74 , C07C251/12 , C07C251/16 , C23C16/18 , C23C16/45525 , C23C16/45553 , H01L21/288 , H01L21/3141 , Y10T428/31504
摘要： The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. This invention also provides a process for making amino-imines and novel amino-imines.
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6.发明公开ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND NOVEL TANTALUM COMPLEXES 审中-公开ATOM管理存放率钽含硅薄膜使用表面活性剂和新的复杂钽
公开(公告)号：EP1913173A2
公开(公告)日：2008-04-23
申请号：EP06789513.6
申请日：2006-08-07
IPC分类号： C23C16/455
CPC分类号： C07F9/00 , C07C251/12 , C07C251/78 , C07C257/14 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/45534 , C23C16/45553
摘要： Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.
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公开(公告)号：EP1461345B1
公开(公告)日：2006-05-31
申请号：EP02805576.2
申请日：2002-12-12
IPC分类号： C07F15/00
摘要： The present invention relates to novel copper formate complexes and the deposition of metallic copper on substrates or in or on porous solids using these novel copper complexes.
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公开(公告)号：EP1461345A2
公开(公告)日：2004-09-29
申请号：EP02805576.2
申请日：2002-12-12
IPC分类号： C07F15/00
摘要： The present invention relates to novel copper formate complexes and the deposition of metallic copper on substrates or in or on porous solids using these novel copper complexes.
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