公开(公告)号：EP2408275B1

公开(公告)日：2017-01-11

申请号：EP10750873.1

申请日：2010-03-10

申请人： EMD Corporation ,  Tokyo Electron Limited

发明人： SETSUHARA, Yuichi ,  NISHIMURA, Eiichi ,  EBE, Akinori

IPC分类号： H05H1/46 ,  C23C16/505 ,  H01L21/205 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/3211 ,  H01J37/321

公开(公告)号：EP2408275A1

公开(公告)日：2012-01-18

申请号：EP10750873.1

申请日：2010-03-10

申请人： EMD Corporation ,  Tokyo Electron Limited

发明人： SETSUHARA, Yuichi ,  NISHIMURA, Eiichi ,  EBE, Akinori

IPC分类号： H05H1/46 ,  C23C16/505 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01J37/3211 ,  H01J37/321

摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container and improving the uniformity in the density distribution of the plasma, while preventing formation of particles or contamination of a base body due to the sputtering of the conductor of the radio-frequency antenna. A plasma processing device 10 according to the present invention is an inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container 11; an antenna-placing section 12 provided between an inner surface 111B and an outer surface 111A of a wall of the vacuum container 11; a radio-frequency antenna placed in the antenna-placing section 12, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member 15 separating the antenna-placing section 12 and an internal space 112 of the vacuum container, wherein the radio-frequency antenna 13 has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves.

摘要翻译： 本发明提供一种等离子体处理装置，该等离子体处理装置能够在真空容器内诱发强射频电场并且提高等离子体的密度分布的均匀性，同时防止由于溅射造成的基体的颗粒的形成或污染 射频天线的导体。 根据本发明的等离子体处理装置10是使用射频放电的感应耦合等离子体处理装置，包括：真空容器11; 设置在真空容器11的壁的内表面111B和外表面111A之间的天线放置部分12; 放置在天线放置部分12中的高频天线，高频天线终止而不完成一圈; 以及将天线放置部分12和真空容器的内部空间112分开的电介质分离部件15，其中，高频天线13的长度等于或小于射频波长的四分之一。

公开(公告)号：EP2345750A1

公开(公告)日：2011-07-20

申请号：EP09809534.2

申请日：2009-08-25

申请人： EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori ,  HAN, Jeong

IPC分类号： C23C14/40 ,  H05H1/46

CPC分类号： H01J37/3408 ,  C23C14/3407 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3411 ,  H01J37/3417

摘要： An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.

摘要翻译： 本发明的目的是提供能够以高速率进行溅射处理的薄膜形成溅射系统。 薄膜形成溅射系统10包括：真空容器11; 位于真空容器11内的目标支架13; 位于真空容器内的目标支架13; 与靶保持器13相对的基板保持件14; 用于在目标保持器13和基板支架14之间施加电压的电源15; 设置在目标保持器13后面的磁控溅射磁体12，用于产生具有与目标T平行的分量的磁场; 以及射频天线16，用于在由磁控溅射磁体12产生的磁场具有等于或高于预定水平的强度的目标T附近的空间内产生射频感应耦合等离子体。 由射频天线16产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

公开(公告)号：EP2602813A1

公开(公告)日：2013-06-12

申请号：EP11814649.7

申请日：2011-08-02

申请人： Osaka University ,  EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori

IPC分类号： H01L21/205 ,  C23C16/509 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01L21/02104 ,  C23C16/24 ,  C23C16/509 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32834 ,  H01J37/32899 ,  H01J37/32954 ,  H01L21/465 ,  H05H1/46 ,  H05H2001/4667

摘要： The problem addressed by the present invention is to provide a plasma processing device capable of easily controlling the energy distribution of electrons in a cloud of plasma according to the kind of gas molecules or their dissociation energy. A plasma processing device 10 according to the present invention includes a plasma processing chamber 1l, a plasma producing chamber 12 communicating with the plasma processing chamber 11, a radio-frequency antenna 16 for producing plasma, a plasma control plate 17 for controlling the energy of electrons in the plasma, as well as an operation rod 171 and a moving mechanism 172 for regulating the position of the plasma control plate 17. In this plasma processing device 10, the energy distribution of the electrons of the plasma produced in the plasma producing chamber 12 can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate 17 by simply moving the operation rod 171 in its longitudinal direction by the moving mechanism 172. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.

摘要翻译： 本发明解决的问题是提供一种等离子体处理装置，其能够根据气体分子的种类或其解离能容易地控制等离子体云中的电子的能量分布。 根据本发明的等离子体处理装置10包括等离子体处理室11，与等离子体处理室11连通的等离子体产生室12，用于产生等离子体的射频天线16，用于控制能量的等离子体控制板17 等离子体中的电子，以及用于调节等离子体控制板17的位置的操作杆171和移动机构172.在该等离子体处理装置10中，等离子体产生室中产生的等离子体的电子的能量分布 可以通过简单地通过移动机构172将操作杆171沿其纵向方向移动来调节射频天线16和等离子体控制板17之间的距离来控制。因此，适合于气体分子种类的等离子体处理 被解离和/或其解离能可以容易地进行。

公开(公告)号：EP2216804A1

公开(公告)日：2010-08-11

申请号：EP08848700.4

申请日：2008-11-12

申请人： EMD Corporation ,  Evatech Co., Ltd.

发明人： SETSUHARA, Yuichi ,  EBE, Akinori ,  INO, Eiji ,  ISHIHARA, Shinichiro ,  ASHIDA, Hajime ,  WATANABE, Akira

IPC分类号： H01L21/205 ,  C23C16/509 ,  H01L21/3065

CPC分类号： C23C16/503 ,  C03C17/22 ,  C03C2217/28 ,  C03C2218/153 ,  C23C16/24 ,  C23C16/509 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32715

摘要： The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber 11; one or plural antenna supporters (plasma generator supporters) 12 projecting into the internal space 111 of the vacuum chamber 11; radio-frequency antennas (plasma generators) 13 attached to each antenna supporter 12; and a pair of substrate body holders 16 provided across the antenna supporter 12 in the vacuum chamber 11, for holding a planar substrate body to be processed 21.

摘要翻译： 本发明的目的在于提供一种等离子体处理装置，该等离子体处理装置用于对平面状的被处理基板进行等离子体处理，该等离子体处理装置能够良好地均匀地生成等离子体，并且能够高效率地使用等离子体，生产率高。 即，根据本发明的等离子体处理装置包括：真空室11; 伸入真空室11的内部空间111的一个或多个天线支撑件（等离子体发生器支撑件）12; 连接到每个天线支架12的射频天线（等离子体发生器）13; 以及一对基板主体保持件16，设置在真空室11中的天线支撑件12的两侧，用于保持平面的待处理基板主体21。

公开(公告)号：EP2752501A1

公开(公告)日：2014-07-09

申请号：EP11871690.1

申请日：2011-08-30

申请人： EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori

IPC分类号： C23C14/34 ,  C23C14/35 ,  H05H1/46

CPC分类号： H01J37/3411 ,  C23C14/3471 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3408 ,  H01J37/3417

摘要： A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device 10 includes a target holder 14 provided in a vacuum container 11, a substrate holder 15 facing the target holder 14, a means 19 for introducing a plasma generation gas into the vacuum container 11, a means 161 for generating an electric field for sputtering in a region including a surface of a target T, an antenna placement room 182 provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window 183, and a radio-frequency antenna 13, which is provided in the antenna placement room 182, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder.

摘要翻译： 提供能够以高速率形成高质量薄膜的薄膜形成溅射装置。 溅射装置10包括设置在真空容器11中的靶保持器14，面向靶保持器14的基板保持件15，用于将等离子体产生气体引入真空容器11的装置19，用于产生电场的装置161 在包括目标T的表面的区域中的溅射，设置在真空容器的壁的内表面和外表面之间的天线放置室182，以及通过电介质窗183与真空容器的内部空间分离， 设置在天线放置室182中的射频天线13，用于在包括由目标保持器保持的目标的表面的区域中产生射频感应电场。

公开(公告)号：EP2408276A1

公开(公告)日：2012-01-18

申请号：EP10750875.6

申请日：2010-03-10

申请人： EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori

IPC分类号： H05H1/46 ,  C23C16/505 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/3211 ,  H01J37/32477 ,  H05H1/46 ,  H05H2001/4667

摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device 10 according to the present invention includes a vacuum containem11, a radio-frequency antenna 21 placed between an inner surface 111A and an outer surface 111B of a wall of the vacuum container 11, and a dielectric separating member 16 for separating the radio-frequency antenna 21 from an internal space of the vacuum container 11. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container 11. The separating member 16 has the effects of preventing the radio-frequency antenna 21 from undergoing sputtering by the plasma produced in the vacuum container 11, suppressing an increase in the temperature of the radio-frequency antenna 21, and preventing the formation of particles.

摘要翻译： 本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。 根据本发明的等离子体处理装置10包括真空容器11，放置在真空容器11的壁的内表面111A和外表面111B之间的射频天线21和用于将真空容器11分离的电介质分离构件16 射频天线21与真空容器11的内部空间相比。与使用外部天线的装置相比，本装置可以在真空容器11中产生更强的磁场。分离构件16具有防止 射频天线21通过在真空容器11中产生的等离子体进行溅射，抑制高频天线21的温度上升，防止颗粒的形成。

公开(公告)号：EP2345750B1

公开(公告)日：2019-01-02

申请号：EP09809534.2

申请日：2009-08-25

申请人： EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori ,  HAN, Jeon Geon

IPC分类号： C23C14/34 ,  H05H1/46 ,  H01J37/32 ,  H01J37/34 ,  C23C14/35

公开(公告)号：EP2753154A1

公开(公告)日：2014-07-09

申请号：EP11871785.9

申请日：2011-08-30

申请人： EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/509 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01J37/32651 ,  C23C14/358 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J2237/0266 ,  H05H1/46 ,  H05H2001/4667

摘要： Provided is a radio-frequency antenna with which the blocking or weakening of a radio-frequency induction electric field will not occur even if a thin-film material deposits on the antenna surface. A radio-frequency antenna 10 includes a linear antenna conductor 13, a dielectric protective pipe 14 provided around the antenna conductor 13, and a deposit shield 15 provided around the protective pipe 14, the deposit shield 15 covering at least one portion of the protective pipe 14 and having at least one opening 153 on any line extending along the length of the antenna conductor 13. Although the thin-film material adheres to the surfaces of the protective pipe and the deposit shield, the deposited substance has at least one discontinuous portion in the longitudinal direction of the antenna conductor. Therefore, in the case where the thin-film material is electrically conductive, the blocking of the radio-frequency induction electric field is prevented. In the case where the thin-film material is not electrically conductive, an attenuation in the intensity of the radio-frequency induction electric field is suppressed.

摘要翻译： 提供一种射频天线，即使薄膜材料沉积在天线表面上也不会发生射频感应电场的阻塞或弱化。 射频天线10包括线状天线导体13，设置在天线导体13周围的介质保护管14和设置在保护管14周围的沉积屏蔽15，沉积屏蔽15覆盖保护管的至少一部分 14，并且在沿着天线导体13的长度延伸的任何线上具有至少一个开口153.尽管薄膜材料粘附到保护管和沉积屏蔽的表面上，但沉积物质具有至少一个不连续部分 天线导体的纵向。 因此，在薄膜材料导电的情况下，防止了射频感应电场的阻塞。 在薄膜材料不导电的情况下，抑制了射频感应电场强度的衰减。

公开(公告)号：EP2615889A1

公开(公告)日：2013-07-17

申请号：EP11823665.2

申请日：2011-09-09

申请人： EMD Corporation

发明人： SETSUHARA, Yuichi ,  EBE, Akinori

IPC分类号： H05H1/46 ,  C23C16/509 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H05H1/46 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32477 ,  H05H2001/4667

摘要： The present invention provides a plasma processing device which can generate plasma with a higher density than that in an external antenna type, and can prevent the impurities from being mixed into an object to be processed and can prevent particles from being generated, which are problems that occur in an internal antenna type. The plasma processing device according to the present invention has: a metallic vacuum chamber 11; an antenna-placing section 14 in which a radio-frequency antenna 18 is placed inside a through-hole (hollow space) provided in an upper wall 112 of the vacuum chamber 11; and a dielectric separating plate 15 covering the entire inner surface 1121 of the upper wall 112. In this plasma processing device, the entire inner surface 1121 side of the upper wall 112 is covered with the separating plate 15 so that surfaces in different level otherwise formed when a smaller separating plate is used is not formed between the inner surface 1121 and the separating plate 15. Therefore, the generation of particles caused by the formation of adhered materials on the surfaces in different level is prevented.

摘要翻译： 本发明提供一种等离子体处理装置，其能够生成比外部天线型的等离子体的密度更高的等离子体，并且能够防止杂质混入到被处理物中，能够防止产生粒子， 发生在内部天线类型中。 根据本发明的等离子体处理装置具有：金属真空室11; 天线放置部分14，其中高频天线18放置在设置在真空室11的上壁112中的通孔（中空空间）内; 以及覆盖上壁112的整个内表面1121的电介质分离板15.在该等离子体处理装置中，上壁112的整个内表面1121侧被分离板15覆盖，使得不同水平面 当在内表面1121和分隔板15之间不使用较小的分隔板时，因此防止了由于在不同水平面上形成粘附材料而产生的颗粒的产生。