利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

67 条记录 (耗时 0.012 秒)

    A NANO-MULTILAYER FILM
    1.
    发明授权
    A NANO-MULTILAYER FILM 有权
    NANO-MEHRSCHICHTFILM

    公开(公告)号：EP2924142B1

    公开(公告)日：2016-11-16

    申请号：EP15000965.2

    申请日：2012-10-19

    申请人： ZhongAo HuiCheng Technology Co. Ltd.

    发明人： Jin, Gong ,  Tu, Jiangping ,  Li, Lingling ,  Wang, Meina ,  Wang, Gang

    IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C28/00 ,  H01J37/32 ,  H01J37/34 ,  A61L27/30

    CPC分类号： H01J37/3417 ,  A61L31/084 ,  A61L31/088 ,  A61L2420/02 ,  A61L2420/08 ,  C23C14/025 ,  C23C14/0605 ,  C23C14/0611 ,  C23C14/0635 ,  C23C14/165 ,  C23C14/3464 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  H01J37/32633 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3447 ,  Y10T428/265 ,  Y10T428/30

    摘要： A magnetron sputtering coating device is provided, characterized in the following aspects: The device at least includes a deposition chamber, sputtering cathodes, a rotating stand on the base of the deposition chamber and a work steady on the rotating stand, as well as a first rotation system for driving the rotating stand to rotate around the central axis of the rotating stand; the sputtering cathode, arranged around and perpendicular to the rotating stand, includes two first sputtering cathodes and one second sputtering cathode, and is located on a circumference concentric with the rotating stand; there is an arc of 180°-240° between the two first sputtering cathodes, which is equally divided by the second sputtering cathode; a baffle through the surface of the rotating stand is fixedly arranged on the rotating stand, having both ends beyond both ends of the sputtering cathode in the direction perpendicular to the rotating stand. The device is simple in structure and process control, and realizes preparation of the nano-multilayer film, suitable for industrialization.

    摘要翻译： 提供了一种磁控溅射涂覆装置，其特征在于以下方面：该装置至少包括沉积室，溅射阴极，在沉积室的底部上的旋转支架和在旋转支架上稳定的工件，以及第一 旋转系统，用于驱动旋转支架绕旋转支架的中心轴线旋转; 溅射阴极设置在旋转支架周围并且垂直于旋转支架，包括两个第一溅射阴极和一个第二溅射阴极，并且位于与旋转支架同心的圆周上; 在两个第一溅射阴极之间存在180°-240°的弧，其被第二溅射阴极等分; 通过旋转支架的表面的挡板固定地布置在旋转支架上，其两端在垂直于旋转支架的方向上具有超过溅射阴极两端的两端。 该器件结构简单，工艺控制简单，实现纳米多层膜的制备，适用于工业化。

    SPUTTERING DEVICE, TARGET AND SHIELD
    4.
    发明公开
    SPUTTERING DEVICE, TARGET AND SHIELD 有权
    溅射和SHIELD

    公开(公告)号：EP2792766A1

    公开(公告)日：2014-10-22

    申请号：EP12857644.4

    申请日：2012-08-30

    申请人： Canon Anelva Corporation

    发明人： ISHIHARA, Shigenori

    IPC分类号： C23C14/34

    CPC分类号： H01J37/3411 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3441

    摘要： A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion.

    THIN FILM-FORMING SPUTTERING DEVICE
    5.
    发明公开
    THIN FILM-FORMING SPUTTERING DEVICE 审中-公开
    DÜNNSCHICHTBILDENDESPUTTERVORRICHTUNG

    公开(公告)号：EP2345750A1

    公开(公告)日：2011-07-20

    申请号：EP09809534.2

    申请日：2009-08-25

    申请人： EMD Corporation

    发明人： SETSUHARA, Yuichi ,  EBE, Akinori ,  HAN, Jeong

    IPC分类号： C23C14/40 ,  H05H1/46

    CPC分类号： H01J37/3408 ,  C23C14/3407 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3411 ,  H01J37/3417

    摘要： An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.

    摘要翻译： 本发明的目的是提供能够以高速率进行溅射处理的薄膜形成溅射系统。 薄膜形成溅射系统10包括：真空容器11; 位于真空容器11内的目标支架13; 位于真空容器内的目标支架13; 与靶保持器13相对的基板保持件14; 用于在目标保持器13和基板支架14之间施加电压的电源15; 设置在目标保持器13后面的磁控溅射磁体12，用于产生具有与目标T平行的分量的磁场; 以及射频天线16，用于在由磁控溅射磁体12产生的磁场具有等于或高于预定水平的强度的目标T附近的空间内产生射频感应耦合等离子体。 由射频天线16产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

    Back sputtering shield
    8.
    发明公开
    Back sputtering shield 失效
    屏幕rückzerstäubte拦截颗粒

    公开(公告)号：EP0853331A3

    公开(公告)日：2000-10-11

    申请号：EP98100114.2

    申请日：1998-01-07

    申请人： APPLIED MATERIALS, INC. ,  Motorola, Inc.

    发明人： Adams, Bret ,  Hamilton, Gregory N.

    IPC分类号： H01J37/34

    CPC分类号： H01J37/3411 ,  H01J37/34 ,  H01J37/3435

    摘要： An improved target assembly for a deposition chamber (10) wherein the backing plate (18) which mounts a metal target (14) has a groove (52) for receiving a target shield (50). The target shield (50) can be replaced during normal cleaning operations without replacement of the remainder of the target assembly. The target shield (50) can be used with targets (14) having tapered edges.