公开(公告)号：EP0708688A4

公开(公告)日：1998-03-04

申请号：EP94916590

申请日：1994-04-29

申请人： ENERGY CONVERSION DEVICES INC

发明人： OVSHINSKY STANFORD R ,  TSU DAVID V ,  YOUNG ROSA

IPC分类号： C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  B05D3/00 ,  B05D3/06 ,  B05D3/14

CPC分类号： H01J37/32211 ,  C23C16/511 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32678 ,  H01J2237/3321

摘要： An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate (24) inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source (4) thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate (24) or precursor gas; and depositing a thin film of material onto the substrate (24).

摘要翻译： 用于高质量薄膜材料的高速低温沉积的改进的化学气相沉积方法。 该方法包括提供其中限定有等离子体沉积区域的真空室; 将衬底放置在腔室内; 将等离子体沉积前体气体供应到所述抽真空室中的沉积区域; 将微波能量从其源引导到沉积区域，所述微波能量与沉积前体气体相互作用以形成电子，离子和活化的电中性物质的等离子体，所述等离子体包括一种或多种沉积物质; 通过将额外的非微波电子能量和磁能耦合到等离子体中来增加等离子体中的沉积物质的表面迁移率，而不用有意地向基底或前体气体添加热能; 以及在衬底上沉积材料薄膜。