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    DEPOSITION APPARATUS FOR THE FORMATION OF POLYCRYSTALLINE MATERIALS ON MOBILE SUBSTRATES
    1.
    发明公开
    DEPOSITION APPARATUS FOR THE FORMATION OF POLYCRYSTALLINE MATERIALS ON MOBILE SUBSTRATES 审中-公开
    分离装置多晶材料对移动基底的形成

    公开(公告)号：EP1937867A4

    公开(公告)日：2009-07-29

    申请号：EP06800301

    申请日：2006-07-25

    申请人： ENERGY CONVERSION DEVICES INC

    发明人： OVSHINSKY STANFORD R

    IPC分类号： C23C16/00 ,  C23C16/24 ,  C23C16/54

    CPC分类号： C23C16/545 ,  C23C16/24 ,  H01L27/1214 ,  H01L29/78603

    摘要： A deposition apparatus and method for continuously depositing a polycrystalline material such as polysilicon or polycrystalline SiGe layer on a mobile discrete or continuous web substrate. The apparatus includes a pay-out unit for dispensing a discrete or continuous web substrate and a deposition unit that receives the discrete or continuous web substrate and deposits a series of one or more thin film layers thereon in a series of one or more deposition or processing chambers. In a preferred embodiment, polysilicon is formed by first depositing a layer of amorphous or microcrystalline silicon using PECVD and transforming said layer to polysilicon through heating or annealing with one or more lasers, lamps, furnaces or other heat sources. Laser annealing utilizing a pulsed excimer is a preferred embodiment. By controlling the processing temperature, temperature distribution within a layer of amorphous or microcrystalline silicon etc., the instant deposition apparatus affords control over the grain size of polysilicon. Passivation of polysilicon occur through treatment with a hydrogen plasma. Layers of polycrystalline SiGe may similarly be formed. The instant deposition apparatus provides for the continuous deposition of electronic devices and structures that include a layer of a polycrystalline material such as polysilicon and/or polycrystalline SiGe. Representative devices include photovoltaic devices and thin film transistors. The instant deposition apparatus also provides for the continuous deposition of chalcogenide switching or memory materials alone or in combination with other metal, insulating, and/or semiconducting layers.

    SECURED PHASE-CHANGE DEVICES
    3.
    发明公开
    SECURED PHASE-CHANGE DEVICES 审中-公开
    SECURED相变化的内容

    公开(公告)号：EP1714288A2

    公开(公告)日：2006-10-25

    申请号：EP05713091.6

    申请日：2005-02-08

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： OVSHINSKY, Stanford, R. ,  COHEN, Morrel, H.

    IPC分类号： G11C11/00

    CPC分类号： G11C7/24 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0059 ,  G11C2213/75 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    摘要： An electronic device for securing the contents of data storage and processing elements. The device includes a security element and a phase-change element connected in a parallel arrangement. The security element is a three-terminal device, such as a conventional transistor or three-terminal phase-change device, having an ON state and an OFF state which differ with respect to resistance and regulate electronic access to the phase-change element by controlling the flow of electrical current applied to the parallel combination. In the ON state, the resistance of the security element is less than that of the phase-change element, thereby preventing, inhibiting or confusion a determination of the resistance of the phase-change element. In this PROTECT mode, the contents of the phase-change element are secured. In the OFF state, the resistance of the security element is greater than that of the phase-change material so that the resistance of the parallel combination approaches that of the phase-change element. In this READ mode, the resistance and information content of the phase-change element can be determined. The phase-change element includes a phase-change material and is preferably a chalcogenide based element. The phase-change element may perform a storage or processing function and includes registers and weighting devices as preferred embodiments.

    CATALYSTS AND HYDROGEN STORAGE MATERIALS EXHIBITING QUANTUM EFFECTS
    4.
    发明公开
    CATALYSTS AND HYDROGEN STORAGE MATERIALS EXHIBITING QUANTUM EFFECTS 审中-公开
    催化剂和氢存储材料量子效应SHOW

    公开(公告)号：EP1691918A2

    公开(公告)日：2006-08-23

    申请号：EP04813598.2

    申请日：2004-12-09

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： OVSHINSKY, Stanford, R.

    IPC分类号： B01J21/18 ,  B01J23/00 ,  B01J23/02 ,  B01J23/06 ,  B01J23/40 ,  B01J23/42 ,  B01J23/58 ,  C22C30/00 ,  C22C30/02 ,  C22C30/04 ,  C01B6/24

    CPC分类号： B01J35/002 ,  B01J23/02 ,  B01J23/22 ,  B01J23/74 ,  B01J23/745 ,  B01J23/75 ,  B01J35/0013 ,  B01J35/006 ,  B01J37/086 ,  B01J37/343 ,  C01B3/0026 ,  C01B3/0031 ,  Y02E60/327

    摘要： Catalysts, supported catalysts and hydrogen storage materials exhibiting quantum effects. The disclosed quantum limit catalyst is comprised of atomic aggregations whose dimensions correspond to the quantum limit. The structural configurations possible in the quantum limit correspond to atomic aggregations having bond lengths, bond angles, topologies and coordination environments that differ from those found in the macroscopic limit. The modifications in election density and wavefunction characteristics (overlap and directionality) achieved in the quantum limit provide, in effect, 'new' or 'virtual' chemical elements whose structure and bonding deviate from those associated with the 'standard' chemical elements of conventional materials. A catalyst including a catalytic phase supported by an electronically active support matrix is further disclosed. An electronic interaction that occurs between the catalytic phase and support matrix leads to perturbations in the magnitude and/or spatial distribution of electron density at or near the surface of the catalytic phase. The electronic interaction originates from an overlap of wavefunctions associated with electron density of the catalytic phase with wavefunctions associated with electron density of the catalytic phase. Embodiments include those in which the electronic interaction is of the bonding-type, anti-bonding type or donor-acceptor type. Filled, partially filled or unoccupied orbital states may participate in the electronic interaction. The perturbation in electron density induced by the electronic interaction modifies the catalytic properties of the catalytic phase.

    MODIFIED MAGNESIUM BASED HYDROGEN STORAGE ALLOYS
    7.
    发明公开
    MODIFIED MAGNESIUM BASED HYDROGEN STORAGE ALLOYS 有权
    修改于镁基合金储氢

    公开(公告)号：EP1243041A4

    公开(公告)日：2005-08-10

    申请号：EP00979211

    申请日：2000-11-20

    申请人： ENERGY CONVERSION DEVICES INC

    发明人： OVSHINSKY STANFORD R ,  YOUNG ROSA T

    IPC分类号： F17C11/00 ,  C01B3/00 ,  C22C1/04 ,  C22C23/00 ,  C22C23/06 ,  H01M4/38 ,  H01M4/46 ,  H01M8/04 ,  H01M8/06

    CPC分类号： C01B3/0031 ,  B22F2998/00 ,  C01B3/0047 ,  C22C1/0408 ,  C22C23/00 ,  C22C23/06 ,  H01M4/383 ,  H01M4/46 ,  H01M8/065 ,  Y02E60/327 ,  Y10S420/90 ,  B22F9/10

    摘要： A magnesium based hydrogen storage alloy powder which is useful as a hydrogen supply material for powering internal combustion engine or fuel cell vehicles. The alloy contains greater than about 85 atomic percent magnesium, about 2-8 atomic percent nickel, about 0.5-5 atomic percent aluminum and about 2-7 atomic percent rare earth metals or mixtures of rare earth metals. The rare earth elements may be Misch metal and may predominantly contain Ce and/or La. The alloy may also contain about 0.5-5 atomic percent silicon. The alloys can be modified to store more than 4 wt.%, preferably more than 4.5 wt.%, most preferably more than 5 wt.% hydrogen, with a reduced hydride bond strength (i.e. about 64 kJ/mole) which allows for economic recovery of the stored hydrogen. Also, they have a plateau pressure about two times greater than pure Mg and comparable bond energies and plateau pressures to Mg2Ni alloys, while reducing the amount of incorporated nickel by 25-30 atomic %. This reduced nickel content greatly reduces cost of the alloy. Also, while the kinetics of the alloy are improved over pure Mg, the storage capacity of the alloy is significantly greater than the 3.6 wt.% of Mg2Ni material.