公开(公告)号：EP0880793A1

公开(公告)日：1998-12-02

申请号：EP97906006.0

申请日：1997-02-14

申请人： Eaton Corporation

发明人： BLAKE, Julian, G. ,  PURSER, Kenneth, H. ,  BRAILOVE, Adam, A. ,  ROSE, Peter, H. ,  HUGHEY, Barbara, J.

IPC分类号： H01J27 ,  H01J37 ,  H01L21

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/31701 ,  H01L21/67069 ,  H01L21/67778

摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.

公开(公告)号：EP0880797A1

公开(公告)日：1998-12-02

申请号：EP97907646.0

申请日：1997-02-14

申请人： Eaton Corporation

发明人： ROSE, Peter, H. ,  BLAKE, Julian, G. ,  BRAILOVE, Adam, A. ,  YANG, Zhongmin ,  MCRAY, Richard, F. ,  HUGHEY, Barbara, J.

IPC分类号： H01J27 ,  H01J37 ,  H01L21

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705 ,  H01L21/67069 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838

摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber (318) that mounts an ion source (330), a single workpiece translating stage (320) and a loadlock (310). The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.