专利检索 ap:("Enthone, Inc.") AND inv:"Hurtubise, Richard" 第 1 页

1.

发明公开
CAPPING OF METAL INTERCONNECTS IN INTEGRATED CIRCUIT ELECTRONIC DEVICES 审中-公开
标题翻译：金属INTERKONNEKTS的集成电路电子器件COVER

公开(公告)号：EP1771878A1

公开(公告)日：2007-04-11

申请号：EP05758787.5

申请日：2005-06-13

申请人： Enthone, Inc.

发明人： YAKOBSON, Eric , Hurtubise, Richard , Witt, Christian , Chen, Qingyun

IPC分类号： H01L21/768 , H01L21/288

CPC分类号： H01L21/76846 , H01L21/288 , H01L21/76849 , H01L24/03 , H01L24/05 , H01L2224/05006 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01327 , H01L2924/14 , H01L2924/15747 , H05K3/107 , H05K3/244 , H05K2203/072 , H05K2203/1476 , H01L2924/00

摘要： A multilayer metal cap (18, 20) over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.