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公开(公告)号：EP4359588A1
公开(公告)日：2024-05-01
申请号：EP22828977.3
申请日：2022-05-25
发明人： DESALVO, Donald , BLAKE, Ron , GUGLIOTTI, Carmichael , DECESARE, William, J. , BELLEMARE, Richard, A. , WATKOWSKI, James , LONG, Ernest
CPC分类号： C25D5/02 , C25D7/00 , C25D3/38 , C25D5/18 , C23C18/1653 , H05K3/423 , H05K2203/149220130101 , H05K2203/147620130101
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公开(公告)号：EP4162100A1
公开(公告)日：2023-04-12
申请号：EP21817354.0
申请日：2021-05-05
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公开(公告)号：EP4073293A1
公开(公告)日：2022-10-19
申请号：EP20899960.7
申请日：2020-12-08
发明人： SUN, Shaopeng , WHITTEN, Kyle , BRAYE, Stephen , NAJJAR, Elie
IPC分类号： C25D3/12 , C25D5/16 , H01L21/288
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4.发明公开
公开(公告)号：EP4056001A1
公开(公告)日：2022-09-14
申请号：EP20885395.2
申请日：2020-10-28
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公开(公告)号：EP3839103A1
公开(公告)日：2021-06-23
申请号：EP21155629.5
申请日：2016-06-30
发明人： COMMANDER, John , PANECCASIO, JR, Vincent , ROUYA, Eric , WHITTEN, Kyle , SUN, Shaopeng , HAN, Jianwen
摘要： Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
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公开(公告)号：EP3687754A1
公开(公告)日：2020-08-05
申请号：EP18861337.6
申请日：2018-09-19
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公开(公告)号：EP3300808A1
公开(公告)日：2018-04-04
申请号：EP17172987.4
申请日：2005-02-23
发明人： Yau, Yung-Herng , Richardson, Thomas B. , Abys, Joseph A. , Wengenroth, Karl F. , Fiore, Anthony , Xu, Chen , Fan, Chonglun , Fudala, John
IPC分类号： B05D3/10 , B05D1/18 , B05D5/12 , B32B15/20 , C09D5/00 , C09D5/24 , C25D5/22 , C25D5/02 , C25D3/46
CPC分类号： H05K1/09 , C09D1/00 , C23C18/16 , C23C18/1614 , C23C18/1616 , C23C18/1633 , C23C18/1683 , C23C18/1687 , C23C18/42 , C23C18/44 , C23C18/54 , C23C22/06 , C23C22/58 , C25D3/46 , C25D3/56 , C25D3/64 , H05K3/244 , H05K3/422 , H05K2203/0257 , H05K2203/073 , Y10S205/916
摘要： Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.
摘要翻译： 用于在电子制造中的金属表面（例如PWB）上镀银以产生大于80原子％银的银镀层，耐晦暗且具有良好可焊性的组合物和方法。
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9.发明公开USE OF WATER SOLUBLE LANTHANIDE COMPOUNDS AS STABILIZER IN ELECTROLYTES FOR ELECTROLESS METAL DEPOSITION 审中-公开水溶性稀土化合物在电解质沉积用电解质中作为稳定剂的应用
公开(公告)号：EP3255175A1
公开(公告)日：2017-12-13
申请号：EP16173403.3
申请日：2016-06-07
摘要： The present invention relates to the use of water soluble lanthanide compounds as stabilizer in electrolytes for electroless metal deposition, an electrolyte as well as a method for the electroless deposition of metals, particularly layers of nickel, copper, cobalt, boron, silver, palladium or gold, as well as layers of alloys comprising at least one of the aforementioned metals as alloying metal.
摘要翻译： 本发明涉及水溶性镧系元素化合物作为稳定剂在用于无电金属沉积的电解质中的用途，电解质以及用于无电沉积金属，特别是镍，铜，钴，硼，银，钯或 金以及包含至少一种上述金属作为合金化金属的合金层。
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公开(公告)号：EP3195708A1
公开(公告)日：2017-07-26
申请号：EP15841311.2
申请日：2015-09-15
摘要： A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.
摘要翻译： 用于微电子学中的电解电镀组合物，其包含含有脂族二（叔胺）与烷基化剂的反应产物的整平剂。 使用矫直机的电解电镀方法，矫直机的制造方法以及矫直机化合物。
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