公开(公告)号：EP2451613A1

公开(公告)日：2012-05-16

申请号：EP10723957.6

申请日：2010-05-18

申请人： Evonik Degussa GmbH ,  BASF SE

发明人： KRÖLL, Michael ,  LORTZ, Wolfgang ,  HEBERER, Stefan ,  BRANDS, Mario ,  LI, Yuzhuo ,  DRESCHER, Bettina ,  FRANZ, Diana

IPC分类号： B24D3/00 ,  C03C19/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000 s
-1 , wherein a) the cerium oxide starting dispersion - contains 0.5 to 30% by weight of cerium oxide particles as the solid phase, - has a d5o of the particle size distribution of 10 to 100 nm - and has a pH of 1 to 7, and b) the silicon dioxide starting dispersion - contains 0.1 to 30% by weight of colloidal silicon dioxide particles as the solid phase, has a d5o of the particle size distribution of 3 to 50 nm and has a pH of 6 to 11.5, d) with the proviso that the d5o of the particle size distribution of the cerium oxide particles is greater than that of the silicon dioxide particles, the cerium oxide/silicon dioxide weight ratio is >1 and the amount of cerium oxide starting dispersion is such that the zeta potential of the dispersion is negative.

公开(公告)号：EP2741892A2

公开(公告)日：2014-06-18

申请号：EP12819369.5

申请日：2012-07-30

申请人： BASF SE

发明人： NOLLER, Bastian Marten ,  DRESCHER, Bettina ,  GILLOT, Christophe ,  LI, Yuzhou

IPC分类号： B24B29/02

CPC分类号： H01L21/30625 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02024

摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si
1-x Ge
x material with 0.1 ≤ x

公开(公告)号：EP2625237A1

公开(公告)日：2013-08-14

申请号：EP11830273.6

申请日：2011-10-04

申请人： BASF SE

发明人： DRESCHER, Bettina ,  NOLLER, Bastian Marten ,  SCHMITT, Christine ,  SUGIHARTO, Albert Budiman ,  LI, Yuzhuo

IPC分类号： C09G1/02

CPC分类号： C09K13/04 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

摘要： A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A)inorganic particles, organic particles, or a mixture thereof, (B)a heteropolyacid or a salt thereof, (C)a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D)an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.

公开(公告)号：EP2742103B1

公开(公告)日：2016-09-21

申请号：EP12819882.7

申请日：2012-07-30

申请人： BASF SE

发明人： NOLLER, Bastian Marten ,  DRESCHER, Bettina ,  GILLOT, Christophe ,  LI, Yuzhuo ,  GAO, Ning

IPC分类号： H01L21/306 ,  C09G1/02 ,  C09K3/14

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

公开(公告)号：EP2742103A2

公开(公告)日：2014-06-18

申请号：EP12819882.7

申请日：2012-07-30

申请人： BASF SE

发明人： NOLLER, Bastian Marten ,  DRESCHER, Bettina ,  GILLOT, Christophe ,  LI, Yuzhuo ,  GAO, Ning

IPC分类号： C09G1/02

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si
1-x Ge
x material with 0.1 ≤ x 11 R
12 R
13 R
14 ]
+ , wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (-OH), alkoxy (-OR
1 ), heterocyclic alkoxy (-OR
1 as part of a heterocyclic structure), carboxylic acid (-COOH), carboxylate (-COOR
2 ), amino (-NR
3 R
4 ), heterocyclic amino (-NR
3 R
4 as part of a heterocyclic structure), imino (=N-R
5 or -N=R
6 ), heterocyclic imino (=N-R
5 or -N=R
6 as part of a heterocyclic structure), phosphonate (-P(=0)(OR
7 )(OR
8 ) ), phosphate (-0-P(=0)(OR
9 )(OR
10 ) ), phosphonic acid (-P(=0)(OH)
2 ), phosphoric acid (-0-P(=0)(OH)
2 ) moiety, or their protonated or deprotonated forms, R
1 , R
2 , R
7 , R
9 is - independently from each other - alkyl, aryl, alkylaryl, or arylalkyl, R
3 , R
4 , R
5 , R
8 , R
10 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, R
6 is alkylene, or arylalkylene, R
11 , R
12 , R
13 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, and R
11 , R
12 , R
13 does not comprise any moiety (Z), R
14 is alkyl, aryl, alkylaryl, or arylalkyl, and R
14 does not comprise any moiety (Z), and (D) an aqueous medium.