专利检索 ap:("FAIRCHILD SEMICONDUCTOR") AND inv:"BARTLOW HOWARD D" 第 1 页

1.

发明公开
CONTACT METHOD FOR THIN SILICON CARBIDE EPITAXIAL LAYER AND SEMICONDUCTOR DEVICES FORMED BY THOSE METHODS 有权
标题翻译：接触法用于薄碳化硅外延层和利用这种方法制得的半导体器件

公开(公告)号：EP1412985A4

公开(公告)日：2008-11-26

申请号：EP02752582

申请日：2002-07-25

申请人： FAIRCHILD SEMICONDUCTOR

发明人： KORDESCH MARTIN E , BARTLOW HOWARD D , WOODIN RICHARD L

IPC分类号： H01L21/331 , H01L21/04 , H01L21/203 , H01L29/24 , H01L29/732 , H01L29/735 , H01L23/48 , H01L23/52 , H01L29/40 , H01L31/0328 , H01L31/072 , H01L31/109

CPC分类号： H01L29/732 , H01L21/0485 , H01L29/0649 , H01L29/1004 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/74

摘要： A compound semiconductor device discloses a substrate (10), active layers or compound semiconductor material layer (12, 14, 16) that are sequentially formed overt the substrate, an opening (20) in the layer (16), insulating layers (30) at side walls of the opening, a fourth compound semiconductor material (50) and reaction regions (74) within the opening, metal contacts (70) on the reaction region, and an insulating layer (80) and metal layer (72) on top of the layer (16).