ION IMPLANTATION TO ALTER ETCH RATE
    2.
    发明公开
    ION IMPLANTATION TO ALTER ETCH RATE 有权
    IONENIMPLANTATION ZUR VERNDNDUNG EINERÄTZGESCHWINDIGKEIT

    公开(公告)号:EP2943769A4

    公开(公告)日:2016-08-17

    申请号:EP14737997

    申请日:2014-01-10

    申请人: FEI CO

    发明人: FOORD DAVID RUE CHAD

    摘要: Implanting a material in a pattern hardens the material in the pattern for subsequent etching. When the region is etched, by ion beam sputtering, chemically enhanced charged particle beam etching, or chemical etching, a thicker structure remains because of the reduced etch rate of the hardened pattern. The invention is particularly useful for the preparation of thin lamella for viewing on a transmission electron microscope.

    摘要翻译: 将图案中的材料植入硬化图案中的材料以进行后续蚀刻。 当该区域被蚀刻时,通过离子束溅射,化学增强的带电粒子束蚀刻或化学蚀刻,由于硬化图案的蚀刻速率降低,保留较厚的结构。 本发明特别可用于制备用于在透射电子显微镜上观察的薄片层。