公开(公告)号：EP3286778A1

公开(公告)日：2018-02-28

申请号：EP15890148

申请日：2015-09-18

Applicant: INTEL CORP

Inventor： BORODOVSKY YAN A

IPC: H01L21/027

CPC classification number: H01J37/3045 ,  H01J37/045 ,  H01J37/09 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0453 ,  H01J2237/24475 ,  H01J2237/24578 ,  H01J2237/2817 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/31144 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54473

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.

公开(公告)号：EP3268977A1

公开(公告)日：2018-01-17

申请号：EP16709081.0

申请日：2016-03-10

Applicant: Mapper Lithography IP B.V.

Inventor： VERGEER, Niels

IPC: H01J37/304 ,  G03F7/20 ,  H01J37/317

CPC classification number: H01J37/3177 ,  G01N21/88 ,  G03F9/7088 ,  H01J37/3045 ,  H01J2237/2482 ,  H01J2237/30433 ,  H01J2237/31798

Abstract: Methods and systems for verification of a mark written on a target surface during a multiple beam lithography process, and for verifying beam position of individual beams on the target surface based on mark verification are disclosed. A mark can be verified by scanning an optical beam over the mark and measuring the reflected optical beam and the position of the target with respect to the optical beam. By comparing the intensity of the reflected light as a function of distance over the mark with reference mark data representing an intended definition of the mark, and any deviation between the measured representation and the reference mark data are determined. If any deviation deviate more than the predetermined limit, incorrectly positioned beams can be verified from the data.

公开(公告)号：EP3101679A1

公开(公告)日：2016-12-07

申请号：EP15179128.2

申请日：2015-07-30

Applicant: FEI Company

Inventor： Warschauer, Reinier

IPC: H01J37/304

CPC classification number: G06K9/3216 ,  G06K9/00 ,  G06K2009/3225 ,  G06T7/0004 ,  G06T7/11 ,  G06T7/73 ,  G06T2207/30164 ,  G06T2207/30204 ,  H01J37/3045 ,  H01J2237/30438 ,  H01J2237/3045 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Multiple reference fiducials (206, 208) are formed on a sample for charged particle beam facilties processing the sample. After one fiducial (206) is degraded by the charged particle beam, a second backup fiducial (208) is used to create one or more additional fiducials (216).

Abstract translation: 在用于处理样品的带电粒子束装置的样品上形成多个参考基准（206,208）。 在一个基准（206）被带电粒子束退化之后，第二备用基准（208）被用于产生一个或多个附加基准（216）。

公开(公告)号：EP3018693A1

公开(公告)日：2016-05-11

申请号：EP15192862.9

申请日：2015-11-04

Applicant: FEI Company

Inventor： Brogden, Valerie ,  Blackwood, Jeff ,  Schmidt, Michael ,  Trivedi, Dhruti ,  Young, Richard ,  Miller, Tom ,  Routh, Jr., Brian ,  Stone, Stacey ,  Templeton, Todd

IPC: H01J37/304 ,  G01N1/28

CPC classification number: H01J37/3023 ,  G01N1/286 ,  G01N2001/2873 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3045 ,  H01J37/31 ,  H01J2237/208 ,  H01J2237/31745

Abstract: Techniques are described that facilitate automated extraction of lamellae and attaching the lamellae to sample grids for viewing on transmission electron microscopes. Some embodiments of the invention involve the use of machine vision to determine the positions of the lamella, the probe, and/or the TEM grid to guide the attachment of the probe to the lamella and the attachment of the lamella to the TEM grid. Techniques that facilitate the use of machine vision include shaping a probe tip so that its position can be readily recognized by image recognition software. Image subtraction techniques can be used to determine the position of the lamellae attached to the probe for moving the lamella to the TEM grid for attachment. In some embodiments, reference structures are milled on the probe or on the lamella to facilitate image recognition.

Abstract translation: 描述了有助于自动提取薄片并将薄片附着到样品网格上以在透射电子显微镜上观察的技术。 本发明的一些实施例涉及使用机器视觉来确定薄片，探针和/或TEM网格的位置，以将探针附着到薄片和将薄片附接到TEM网格。 便于使用机器视觉的技术包括成形探针尖端，使其位置可以被图像识别软件容易地识别。 图像减法技术可用于确定附着于探针的薄片的位置，以将薄片移动到TEM网格以进行附着。 在一些实施例中，参考结构在探头上或薄片上铣削以便于图像识别。

公开(公告)号：EP2359977B1

公开(公告)日：2015-11-25

申请号：EP11001317.4

申请日：2011-02-17

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Dömer, Holger

IPC: B23K26/03 ,  B23K26/12 ,  B23K26/36 ,  B23K26/08 ,  G01B11/00

CPC classification number: H01J37/226 ,  B23K26/032 ,  B23K26/082 ,  B23K26/1224 ,  B23K26/36 ,  B23K26/705 ,  H01J37/3045 ,  H01J2237/2482 ,  H01J2237/31732 ,  H01J2237/3174

公开(公告)号：EP2397906A3

公开(公告)日：2015-06-10

申请号：EP11164727.7

申请日：2011-05-04

Applicant: Canon Kabushiki Kaisha

Inventor： Sentoku, Koichi

IPC: G03F9/00 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7053 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/24528 ,  H01J2237/2482

Abstract: A lithography apparatus includes a first measurement device (22) which measures a position of a mark on a substrate (9) with a light, a second measurement device (24) which measures a position of a reference mark (21) on a stage (13) with a charged-particle, a detector (23b) which detects the position of the stage in a first direction parallel to an axis of a projection system (8) and a second direction perpendicular to the axis, and a controller (C1). The controller determines a charged-particle beam of which an incident angle, relative to the first direction, on the reference mark falls within a tolerance, and obtains a baseline for the first measurement device based on a position of the reference mark measured by the second measurement device using the determined charged-particle beam and a position of the reference mark measured by the first measurement device.

公开(公告)号：EP2402978A4

公开(公告)日：2013-08-07

申请号：EP09840714

申请日：2009-10-23

Applicant: HITACHI HIGH TECH CORP

Inventor： MADOKORO YUICHI ,  AIZAWA MEGUMI ,  YOSHIZAWA YUKIO

IPC: H01J37/147 ,  H01J37/153 ,  H01J37/22 ,  H01J37/28 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305

CPC classification number: H01J37/28 ,  H01J37/153 ,  H01J37/3005 ,  H01J37/3045 ,  H01J37/3056 ,  H01J2237/15 ,  H01J2237/1536 ,  H01J2237/20207 ,  H01J2237/221 ,  H01J2237/30483 ,  H01J2237/31745

公开(公告)号：EP1435640B1

公开(公告)日：2013-02-27

申请号：EP03017075.7

申请日：2003-07-28

Applicant: Hitachi High-Technologies Corporation ,  CANON KABUSHIKI KAISHA

Inventor： Sohda, Yasunari, ,  Ohta, Hiroya, ,  Kamimura, Osamu, ,  Gotoh, Susumu,

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/3045

公开(公告)号：EP2550671A1

公开(公告)日：2013-01-30

申请号：EP11709423.5

申请日：2011-03-22

Applicant: Mapper Lithography IP B.V.

Inventor： HANFOUG, Rabah

IPC: H01J37/244 ,  H01J37/317 ,  H01J37/304

CPC classification number: H01J37/244 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2443

Abstract: Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle beamlets. The sensor comprises a converter element (1) for receiving charged particles (22) and generating photons in response. The converter element comprises a surface for receiving one or more charged particle beamlets, the surface being provided with one or more cells for evaluating one or more individual beamlets. Each cell comprises a predetermined blocking pattern (18) of one or more charged particle blocking structures forming multiple knife edges at transitions between blocking and non-blocking regions along a predetermined beamlet scan trajectory over the converter element surface. The converter element surface is covered with a coating layer (20) substantially permeable for said charged particles and substantially impermeable for ambient light. An electrically conductive layer (21) is located between the coating layer and the blocking structures.

公开(公告)号：EP2533278A2

公开(公告)日：2012-12-12

申请号：EP12171116.2

申请日：2012-06-07

Applicant: FEI COMPANY

Inventor： Warschauer, Reinier ,  Young, Richard ,  Rue, Chad ,  Carleson, Peter

IPC: H01L21/66 ,  H01J37/28 ,  H01J37/304 ,  G01T7/00

CPC classification number: H01L22/12 ,  G06T7/73 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J37/3045 ,  H01J2237/31749 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing is described. Preferred embodiments of the present invention can be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan a "strip" of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically "count" the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.