摘要:
An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10), an organic semiconductor film used for the organic semiconductor layer in the element, a manufacturing method thereof, and a compound, a polymer, and a composition used for the organic semiconductor film are provided.
X 1 represents a nitrogen atom or CR a , and rings A to B each represent a specific nitrogen-containing ring. Y 1 represents an oxygen atom, a sulfur atom, CR b 2 , or NR c . V 1 represents NR d , an oxygen atom, a sulfur atom, or a selenium atom. R a to R d each represent a hydrogen atom or a substituent. R 1 represents a specific substituent, and p is an integer of 0 to 2. n represents 1 or 2. * represents a bonding site.
摘要:
An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or contains a polymer having a structure of any one of Formulae (9) and (10), an organic semiconductor film used for the organic semiconductor layer in the element, a manufacturing method thereof, and a compound, a polymer, and a composition used for the organic semiconductor film are provided.
X 1 represents a nitrogen atom or CR a , rings A to D each represent a specific aromatic ring or an aromatic heterocyclic ring. Y 1 represents an oxygen atom, a sulfur atom, CR b 2 , or NR c . R a to R c each represent hydrogen atoms or substituents. R 1 and R 2 each represent a to specific substituent. n represents 1 or 2. * represents a bonding site.
摘要:
Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.
摘要:
Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.
摘要:
An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.
摘要:
An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).
摘要:
An optical information recording medium (12) is provided with a substrate (60) having a pregroove (78) formed on one main plane; a reflecting layer (62) arranged on the one main plane of the substrate (60) and reflecting an access controlling laser beam (20); a selective reflecting layer (70) arranged on the reflecting layer (62), transmitting the access controlling laser beam (28) and reflecting a recording laser beam (20); a recording layer (74) arranged on the selective reflecting layer (70) for having information recorded thereon by the recording laser beam (20); and a reflection preventing layer (66) arranged on the recoding layer (74). On the substrate (60), a dummy groove (80) having a shape similar to that of the pregroove (78) is formed on forming regions (98a, 98b) adjacent to an effective access region (82) on the one main plane.
摘要:
The present invention aims to provide an optical recording medium that is provided with a recording layer for recording information by holography, has an uncomplicated laminate structure, is capable of performing recording and reproducing control such as tracking control and is capable of high-density multiple recording, as well as an optical recording method, an optical recording apparatus and an optical reproducing method. To this end, the present invention provides an optical recording medium which is a transmission medium for recording information based on a holographic principle using an information beam and a reference beam and performing tracking control using a servo beam, the medium including at least a first substrate, a recording layer, a filter layer that selectively reflects the servo beam, and a second substrate being disposed in this order as viewed from the light irradiation side of the information beam and the reference beam.